ChipFind - документация

Электронный компонент: CZRV5246B

Скачать:  PDF   ZIP
Voltage: 2.4 - 39 Volts
Power
: 200mWatts
CZRV5221B - CZRV5259B
Surface Mount Zener Diode
www.comchip.com.tw
COMCHIP
COMCHIP
.107 (2.70)
.012 (.30)Min.
.068 (1.75)
.078 (1.95)
.090 (2.30)
.0
2
7(0.
70
)
.0
38
(.
95
)
.
00
6
(0.
15
)M
a
x
.
.0
5
4
(1.
15
)
.
054
(
1.35
)
.0
0
9(0.
25
)
.0
14
(
.35
)
Dimensions in inches and (millimeters)
SOD-323
FEATURES
Planar Die construction
200mW Power Dissipation
Zener Voltages from 2.4V - 39V
Ideally Suited for Automated Assembly Processes
MECHANICAL DATA
Case: SOD-323, Plastic
Terminals: Solderable per MIL-STD-202, Method 208
Approx. Weight: 0.008 gram
Parameter
Symbol
Value
Power Dissipation (Note 1) @ 75 C
P
D
200
Peak forward Surge Current 8.3ms single half sine-wave superimposed on
rated load (JEDEC Method) (Note 2)
I
FSM
2.0
Operating Junction and Storage Temperature Range
T
J
-55 to +150
NOTES:
1. Mounted on 5.0mm2 (.013mm thick) land areas.
Maximum Ratings and Electrical Characterics
2. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.
M
DS0209001A
Page 1
M
DS0209001A
Page 2
Surface Mount Zener Diode
www.comchip.com.tw
COMCHIP
COMCHIP
Nom. V
Min. V
Max. V
mA
mA
A
V
CZRV5221B
2.4
2.28
2.52
30
20
1200
0.25
100
1
CZRV5222B
2.5
2.38
2.63
30
20
1250
0.25
100
1
CZRV5223B
2.7
2.57
2.84
30
20
1300
0.25
75
1
CZRV5225B
3
2.85
3.15
30
20
1600
0.25
50
1
CZRV5226B
3.3
3.14
3.47
28
20
1600
0.25
25
1
CZRV5227B
3.6
3.42
3.78
24
20
1700
0.25
15
1
CZRV5228B
3.9
3.71
4.1
23
20
1900
0.25
10
1
CZRV5229B
4.3
4.09
4.52
22
20
2000
0.25
5
1
CZRV5230B
4.7
4.47
4.94
19
20
1900
0.25
5
2
CZRV5231B
5.1
4.85
5.36
17
20
1600
0.25
5
2
CZRV5232B
5.6
5.32
5.88
11
20
1600
0.25
5
3
CZRV5234B
6.2
5.89
6.51
7
20
1000
0.25
5
4
CZRV5235B
6.8
6.46
7.14
5
20
750
0.25
3
5
CZRV5236B
7.5
7.13
7.88
6
20
500
0.25
3
6
CZRV5237B
8.2
7.79
8.61
8
20
500
0.25
3
6
CZRV5239B
9.1
8.65
9.56
10
20
600
0.25
3
6.5
CZRV5240B
10
9.5
10.5
17
20
600
0.25
3
8
CZRV5241B
11
10.45
11.55
22
20
600
0.25
3
8.4
CZRV5242B
12
11.4
12.6
30
20
600
0.25
2
9.1
CZRV5243B
13
12.35
13.65
13
9.5
600
0.25
1
9.9
CZRV5245B
15
14.25
15.75
16
8.5
600
0.25
0.5
11
CZRV5246B
16
15.2
16.8
17
7.8
600
0.25
0.1
12
CZRV5248B
18
17.1
18.9
21
7
600
0.25
0.1
14
CZRV5250B
20
19
21
25
6.2
600
0.25
0.1
15
CZRV5251B
22
20.9
23.1
29
5.6
600
0.25
0.1
17
CZRV5252B
24
22.8
25.2
33
5.2
600
0.25
0.1
18
CZRV5254B
27
25.65
28.35
41
5
600
0.25
0.1
21
CZRV5255B
28
26.6
29.4
44
4.5
600
0.25
0.1
21
CZRV5256B
30
28.5
31.5
49
4.2
600
0.25
0.1
23
CZRV5257B
33
31.35
34.65
58
3.8
700
0.25
0.1
25
CZRV5258B
36
34.2
37.8
70
3.4
700
0.25
0.1
27
CZRV5259B
39
37.05
40.95
80
3.2
800
0.25
0.1
30
NOTE:
200 mWatts Zener Diode
3. Zener Voltage (V
Z
) Measurement. Guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature
(T
L
) at 30OC, from the diode body.
4. Zener Impedance (ZZ) Derivation. The zener impedance is derived from the 60 cycle ac voltage, which results when an AC
ELECTRICAL CHARACTERISTICS
(T
A
=25C unless otherwise noted) V
F
=1.2V max, I
F
=100mA
Part Number
Nominal Zener Voltage
Max. Zener Impedance
Max. Reverse
Leakage Current
V
Z
@ I
ZT
Z
ZT
@ I
ZT
Z
ZK
@ I
ZK
I
R
@ V
R
however, actual device capability is as described in Figure 5.
1. Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of 5%.
2. SpecialsAvailableInclude:
A. Nominal zener voltages between the voltages shown and tighter voltage tolerances.
B. Matched sets.
current (I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK
.
5. Surge Current (IR) Non-Repetitive. The rating listed in the electrical characteristics table is maximum peak, non-repetitive,
reverse surge current of wave pulse of 1/120 second duration superimposed on the test current, IZT, per JEDEC registration;
Surface Mount Zener Diode
www.comchip.com.tw
COMCHIP
COMCHIP
M
DS0209001A
Page 3
TYPICAL REVERSE CURRENT
TEMPERA
TURE
COEFFICIENT
,mV
/
C
)
o
NOMINAL ZENER VOLTAGE, Volts
-1
0
1
2
3
4
5
6
7
8
12
11
10
9
8
7
6
5
4
3
2
-2
-3
STEADY STATE POWER DERATING
EFFECT OF ZENER VOLTAGE ON ZENER IMPEDANCE
100
10
1
1000
100
10
1
IZ = 1 mA
5 mA
20 mA
DYNAMIC
IMPEDANCE,
W
NORMAL ZENER VOLTAGE, Volts
T
J
=25 C
O
I
Z(AC)=0.1
I
F=1 kHZ
Z(DC)
FOR
W
ARD
CURRENT
,m
A
TYPICAL FORWARD VOLTAGE
FORWARD VOLTAGE, Volts
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
1000
100
10
1
75 C
O
5 C
O
25 C
O
150 C
O
TYPICAL CAPACITANCE
100
1000
100
10
1
10
1
BIAS AT
50% OF VZ NOM
0 V BIAS
1 V BIAS
CAP
ACIT
ANCE,
pF
NOMINAL ZENER VOLTAGE, Volts
T =25 C
A
o
100
10
1
NOMINAL ZENER VOLTAGE, Volts
TEMPERA
TURE
COEFFICIENT
,mV
/
C
)
o
10
100
TEMPERATURE ( C)
o
POWER
DISSIP
A
TION,
W
atts
STEADY STATE POWER DERATING
1.2
1.0
0.8
0.6
0.4
0.2
0
150
125
100
75
50
25
P
D V
.
S
. T
A
155
Surface Mount Zener Diode
www.comchip.com.tw
COMCHIP
COMCHIP
M
DS0209001A
Page 4
ZENER VOLTAGE V.S. ZENER CURRENT
TYPICAL LEAKGE CURRENT
90
1000
100
10
1
0.1
0.01
0.001
0.0001
0.00001
80
70
60
50
40
30
20
10
0
LEAKAGE
CURRENT
(
A
)
m
NOMINAL ZENER VOLTAGE, Vlots
+150 C
O
+25 C
O
-55 C
O
12
100
10
1
0.1
0.01
10
8
6
4
2
0
ZENER
CURRENT
,m
A
ZENER VOLTAGE, Volts
T =25 C
A
o
100
10
1
0.1
0.01
10
30
50
70
90
T =25 C
A
o
ZENER VOLTAGE, Volts
ZENER VOLTAGE V.S. ZENER CURRENT
ZENER
CURRENT
,m
A