www.docs.chipfind.ru
CYStech Electronics Corp.
Spec. No. : C323N3
Issued Date : 2004.04.05
Revised Date : 2004.10.22 . .
Page No. : 1/5
MTN2302N3
CYStek Product Specification
20V N-CHANNEL Enhancement Mode MOSFET
MTN2302N3
Features
V
DS
=20V
R
DS(ON)
=65m@V
GS
=4.5V, I
DS
=3.6A
R
DS(ON)
=95m@V
GS
=2.5V, I
DS
=3.1A
Advanced trench process technology
High density cell design for ultra low on resistance
Excellent thermal and electrical capabilities
Compact and low profile SOT-23 package
Equivalent Circuit Outline
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
8
V
Continuous Drain Current
I
D
2.4
A
Pulsed Drain Current
I
DM
10
A
Maximum Power Dissipation
Ta=25
1.25
Ta=75
P
D
0.8
W
Operating Junction Temperature
Tj
-55~+150
C
Storage Temperature
Tstg
-55~+150
C
MTN2302N3
SOT-23
GGate
SSource
DDrain
D
G
S
CYStech Electronics Corp.
Spec. No. : C323N3
Issued Date : 2004.04.05
Revised Date : 2004.10.22 . .
Page No. : 2/5
MTN2302N3
CYStek Product Specification
Thermal Performance
Parameter Symbol
Limit
Unit
Thermal Resistance, Junction-to-Ambient(PCB mounted)
Rth,ja
100
C/W
Lead Temperature, for 5 second Soldering(1/8" from case)
T
L
260
C
Note : Surface mounted on FR-4 board, t5sec.
Electrical Characteristics (Ta=25
C)
Symbol Min. Typ. Max.
Unit
Test
Conditions
Static
BV
DSS
20 - - V
V
GS
=0, I
D
=250A
V
GS(th)
0.45 - - V
V
DS
=V
GS
, I
D
=250A
I
GSS/F
- -
100
nA
V
GS
=+8V, V
DS
=0
I
GSS/R
- -
-100
nA
V
GS
=-8V, V
DS
=0
I
DSS
- - 1
A
V
DS
=20V, V
GS
=0
*I
D(ON)
6 - - A
V
DS
=5V, V
GS
=4.5V
- 50
65
I
D
=3.6A, V
GS
=4.5V
*R
DS(ON)
- 75
95
m
I
D
=3.1A, V
GS
=2.5V
*G
FS
- 10 -
S
V
DS
=5V, I
D
=3.6A
Dynamic
Ciss -
450
-
Coss - 70 -
Crss - 43
-
pF V
DS
=10V, V
GS
=0, f=1MHz
t
d(ON)
- 7
15
t
r
-
55
80
t
d(OFF)
- 16
60
t
f
-
10
25
ns
V
DD
=10V, I
D
=1A, R
L
=10
V
GEN
=4.5V, R
G
=6
Qg -
5.2
10
Qgs -
0.65
-
Qgd - 1.5
-
nC
V
DS
=10V, I
D
=3.6A,
V
GS
=4.5V,
Source-Drain Diode
I
SD
- -
1.6
A
-
V
SD
-
0.75
1.2
V
V
GS
=0V, I
SD
=1A
*Pulse Test : Pulse Width
300s, Duty Cycle
2%
CYStech Electronics Corp.
Spec. No. : C323N3
Issued Date : 2004.04.05
Revised Date : 2004.10.22 . .
Page No. : 3/5
MTN2302N3
CYStek Product Specification
Characteristic Curves
CYStech Electronics Corp.
Spec. No. : C323N3
Issued Date : 2004.04.05
Revised Date : 2004.10.22 . .
Page No. : 4/5
MTN2302N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C323N3
Issued Date : 2004.04.05
Revised Date : 2004.10.22 . .
Page No. : 5/5
MTN2302N3
CYStek Product Specification
SOT-23 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1102
0.1204
2.80 3.04 J 0.0034
0.0070 0.085 0.177
B 0.0472
0.0630
1.20 1.60 K 0.0128
0.0266 0.32 0.67
C 0.0335
0.0512
0.89 1.30 L 0.0335
0.0453 0.85 1.15
D 0.0118
0.0197
0.30 0.50 S 0.0830
0.1083 2.10 2.75
G 0.0669
0.0910
1.70 2.30 V 0.0098
0.0256 0.25 0.65
H
0.0005
0.0040
0.013
0.10
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
H
J
K
D
A
L
G
V
C
B
3
2
1
S
Style: Pin 1.Gate 2.Source 3.Drain
Marking:
TE
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
02
PDF 
ZIP