CYStech Electronics Corp.
Spec. No. : C325S3
Issued Date : 2005.06.15
Revised Date :
Page No. : 1/4
MTN7002S3
CYStek Product Specification
N-CHANNEL MOSFET
MTN7002S3
Description
The MTN7002S3 is a N-channel enhancement-mode MOSFET.
Pb-free package
Symbol Outline
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Drain-Source Voltage
BV
DSS
60 V
Drain-Gate Voltage (R
GS
=1M
)
BV
DGR
60 V
Gate-Source Voltage
V
GS
40 V
Continuous Drain Current (T
a
=25
C)
I
D
200 *1
mA
Continuous Drain Current (T
a
=100
C)
I
D
115 *1
mA
Pulsed Drain Current (T
a
=25
C)
I
DM
800 *2
mA
Total Power Dissipation (T
a
=25
C)
200
Total Power Dissipation (T
c
=25
C)
P
D
400
mW
Operating Junction Temperature
Tj
-55~+150
C
Storage Temperature
Tstg
-55~+150
C
Thermal Resistance, Junction-to-Ambient
Rth,ja
625
C/W
Thermal Resistance, Junction-to-Case
Rth,jc
250
C/W
Lead Temperature, for 10 second Soldering
T
L
240
C
Note : *1. The power dissipation of the package may result in a continuous drain current
*2. Pulse Width
300s, Duty cycle
2%
SOT-323
MTN7002S3
D
G
S
GGate
SSource
DDrain
CYStech Electronics Corp.
Spec. No. : C325S3
Issued Date : 2005.06.15
Revised Date :
Page No. : 2/4
MTN7002S3
CYStek Product Specification
Electrical Characteristics (Ta=25
C)
Symbol Min. Typ. Max.
Unit
Test
Conditions
BV
DSS
60 - - V
V
GS
=0, I
D
=10A
V
GS(th)
1 - 2.5
V
V
DS
=2.5V, I
D
=0.25mA
I
GSS/F
- -
100
nA
V
GS
=+20V, V
DS
=0
I
GSS/R
- -
-100
nA
V
GS
=-20V, V
DS
=0
I
DSS
- - 1
A
V
DS
=60V, V
GS
=0
I
D(ON)
500 - -
mA
V
DS
>2V
DS(ON)
, V
GS
=10V
- -
0.375
V
I
D
=50mA, V
GS
=5V
V
DS(ON)
- -
3.75
V
I
D
=500mA, V
GS
=10V
- -
7.5
I
D
=50mA, V
GS
=5V
R
DS(ON)
- -
7.5
I
D
=500mA, V
GS
=10V
G
FS
80 - -
mS
V
DS
>2V
DS(ON)
, I
D
=200mA
C
iss
- -
50
C
oss
- -
25
C
rss
- -
5
pF V
DS
=25V, V
GS
=0, f=1MHz
*Pulse Test : Pulse Width
380s, Duty Cycle
2%
Characteristic Curves
TYPICAL OUTPUT CHARACTERISICS
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
6
7
8
9
10
DRAIN-SOURCE ---VDS(V)
DRAIN CURRENT---ID(A)
VGS=4V
VGS=8V
VGS=5V
TYTICAL TRANSFER CHARACTERISTIC
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
6
7
8
9
10
GAT E-SOURCE VOLT AGE---VGS(V)
DRAIN CURRENT---ID(A)
CYStech Electronics Corp.
Spec. No. : C325S3
Issued Date : 2005.06.15
Revised Date :
Page No. : 3/4
MTN7002S3
CYStek Product Specification
ST AT IC DRAIN-SOURCE ON-ST AT E
RESIST ANCE vs DRAIN CURRENT
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
DRAIN CURRENT ---ID(A)
S
T
ATIC
DR
AIN-S
OUR
C
E
ON-S
T
ATE
R
E
S
I
S
T
ANC
E--- R
D
S
(
on)(ohm
)
VGS=5V
VGS=10V
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
VS GATE-SOURCE VOLTSAGE
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
GAT E-SOURCE VOLT AGE---VGS(V)
S
T
ATIC DRAIN-S
O
URCE ON-S
TATE
RE
S
I
S
T
ANCE
--- RDS
(
on)(ohm
)
ID=115mA
ID=57.5m
A
FORWARD TRANSFER ADM ITTANCE
vs DRAIN CURRENT
1
10
100
1000
0.001
0.01
0.1
1
DRAIN CURRENT ---ID(A)
F
O
R
W
AR
D TR
ANS
F
E
R
ADMITTANC
E---
G
FS(
ms)
VGS=10V
REVERSE DRAIN CURRENT vs SOURCE-
DRAIN VOLTAGE
0.01
0.10
1.00
0.00
0.50
1.00
1.50
SOURCE-DRAIN VOLT AGE---VSD(V)
RE
VE
RS
E
DRAIN CURRE
NT
---IDR(A)
Pulsed
VGS=0V
VGS=10V
SWIT CHING CHARACT ERIST ICS
1
10
100
1000
0.001
0.01
0.1
1
DRAIN CURRENT ---ID(A)
SWITCHING TIMES---(ns)
T f
T d(off)
T d(on)
T r
Power Derating Curve
0
0.05
0.1
0.15
0.2
0.25
0
50
100
150
200
Ambient Temperature---Ta()
Power Dissipation---PD(W)
CYStech Electronics Corp.
Spec. No. : C325S3
Issued Date : 2005.06.15
Revised Date :
Page No. : 4/4
MTN7002S3
CYStek Product Specification
SOT-323 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A
0.0315
0.0433
0.80
1.10
e1
0.0256
- 0.65 -
A1 0.0000 0.0039 0.00 0.10 He 0.0787
0.0886 2.00 2.25
bp 0.0118 0.0157 0.30 0.40 Lp 0.0059
0.0177 0.15 0.45
C 0.0039
0.0098 0.10 0.25 Q 0.0051
0.0091 0.13 0.23
D 0.0709
0.0866 1.80 2.20 v 0.0079
-
0.2
-
E 0.0453
0.0531 1.15 1.35 w 0.0079
-
0.2
-
e 0.0512 -
1.3
-
- -
10
0
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
He
E
A
A1
Q
Lp
e1
e
bp
1
2
3
D
W
B
v
A
Z
detail Z
A
C
0
1
2
scale
mm
Style: Pin 1.Gate 2.Source 3.Drain
3-Lead SOT-323 Plastic
Surface Mounted Package
CYStek Package Code: S3
Marking:
TE
702
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