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Электронный компонент: RB751S-40C2

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CYStech Electronics Corp.

Spec. No. : C345C2
Issued Date : 2003.12.11
Revised Date :
Page No. : 1/3
RB751S-40C2
CYStek Product Specification
Small Signal Schottky diode
RB751S-40C2
Description
Planar silicon Schottky barrier diode encapsulated in a SOD-523 plastic SMD package.

Features
Extremely small surface mounting type.(SC-79/SOD523)
Low reverse current and low forward voltage
High reliability
Applications
Low current rectification and high speed switching
Symbol Outline
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature Tstg .................................................................................................... -45~+125
C
Junction Temperature Tj .............................................................................................................. +125
C
Maximum Voltages and Currents (Ta=25
C)
Peak Reverse Voltage V
RM
.....................................................................................
40 V
DC Reverse Voltage V
R
...................................................................................................................... 30 V
Mean Rectifying Current I
F
........................................................................................................... 30 mA
Peak Forward Surge Current I
FSM.........................................
..............................................200 mA
RB751S-40C2
CYStech Electronics Corp.

Spec. No. : C345C2
Issued Date : 2003.12.11
Revised Date :
Page No. : 2/3
RB751S-40C2
CYStek Product Specification
Characteristics
(Ta=25
C)
Characteristic Symbol Condition Min.
Typ
Max.
Unit
Forward Voltage
V
F
I
F
=1mA -
-
370 mV
Reverse Leakage Current
I
R
V
R
=30V -
-
0.5 A
Capacitance Between Terminals
C
T
V
R
=1V, f=1MHz
-
2
- pF

Characteristic Curves
Forward Current Derating Curve
0
20
40
60
80
100
120
0
25
50
75
100
125
150
Ambient Temperature---T
A
()
Percentage of Rated Forward Current---(%)
M ounting on glass
epoxy PCBs
Forward Current vs Forward Voltage
0.01
0.1
1
10
100
0
0.1
0.2
0.3
0.4
0.5
Forward Voltage---V
F
(V)
Forward Current---I
F
(mA)
- 25
25
75
125
T yp.
pulse measurement
Reverse Leakage Current vs Reverse Voltage
0.001
0.01
0.1
1
10
100
0
10
20
30
Reverse Voltage---VR(V)
Reverse Leakage Current---I
R(A)
T a= 75
T a= 25
T a= 125
Ta=-25
Typ. pulse easurement
Capacitance vs Reverse Voltage
1
10
0
2
4
6
8
10
12
14
Reverse Voltage---V
R
(V)
Capacitance between terminals---C
T
(pF)
f=1MHz
Ta=25
CYStech Electronics Corp.

Spec. No. : C345C2
Issued Date : 2003.12.11
Revised Date :
Page No. : 3/3
RB751S-40C2
CYStek Product Specification
SOD-523 Dimension






*: Typical
Millimeters Millimeters
DIM
Min .Max.
DIM
Min. Max.
A 0.5
0.7 E 0.7
0.9
b
p
0.25
0.35 H
E
1.5
1.7
c 0.1
0.2 V
0.15(typ)
D 1.1
1.3
Notes:
1.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
2.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Marking Code :
5
2-lead SOD-523 Plastic Package
CYStek Package Code : C2
Style : Pin 1. Cathode 2. Anode
2
1
2
1