DC8050
DISCRETE SEMICONDUCTORS
R
DC COMPONENTS CO., LTD.
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in 2W output amplifier of portable
radios in class B push-pull operation.
Pinning
1 = Emitter
2 = Base
3 = Collector
TO-92
.022(0.56)
.014(0.36)
.050
(1.27)
.148(3.76)
.132(3.36)
Typ
.190(4.83)
.170(4.33)
.100
(2.54)
Typ
.050
(1.27)
Typ
.022(0.56)
.014(0.36)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2
o
Typ
5
o
Typ.
2
o
Typ
3 2 1
5
o
Typ.
Dimensions in inches and (millimeters)
Rank
B
C
D
E
Range
85~160
120~200
160~300
250~500
Classification of h
FE2
Characteristic
Symbol
Rating
Unit
Collector-Base Voltage
V
CBO
40
V
Collector-Emitter Voltage
V
CEO
25
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
1.5
A
Base Current
I
B
500
mA
Total Power Dissipation
P
D
1
W
Total Power Dissipation(T
C
=25
o
C)
P
D
2
W
Junction Temperature
T
J
+150
o
C
Storage Temperature
T
STG
-55 to +150
o
C
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector-Base Breakdown Volatge
BV
CBO
40
-
-
V
I
C
=100
A
Collector-Emitter Breakdown Voltage
BV
CEO
25
-
-
V
I
C
=2mA
Emitter-Base Breakdown Volatge
BV
EBO
6
-
-
V
I
E
=100
A
Collector Cutoff Current
I
CBO
-
-
0.1
A
V
CB
=35V
Emitter Cutoff Current
I
EBO
-
-
0.1
A
V
EB
=6V
Collector-Emitter Saturation Voltage
(1)
V
CE(sat)
-
-
0.5
V
I
C
=0.8A, I
B
=80mA
Base-Emitter Saturation Voltage
(1)
V
BE(sat)
-
-
1.2
V
I
C
=0.8A, I
B
=80mA
Base-Emitter On Voltage
(1)
V
BE(on)
-
-
1
V
I
C
=10mA, V
CE
=1V
h
FE1
45
-
-
-
I
C
=5mA, V
CE
=1V
DC Current Gain
(1)
h
FE2
85
-
500
-
I
C
=100mA, V
CE
=1V
h
FE3
40
-
-
-
I
C
=800mA, V
CE
=1V
Transition Frequency
f
T
100
-
-
MHz
I
C
=50mA, V
CE
=10V
Electrical Characteristics
(Ratings at 25
o
C ambient temperature unless otherwise specified)
(1)Pulse Test: Pulse Width
380
s, Duty Cycle
2%
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