DC9012
DISCRETE SEMICONDUCTORS
R
DC COMPONENTS CO., LTD.
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in 1W output amplifier of portable
redios in class B push-pull operation.
Pinning
1 = Emitter
2 = Base
3 = Collector
Characteristic
Symbol
Rating
Unit
Collector-Base Voltage
V
CBO
-40
V
Collector-Emitter Voltage
V
CEO
-20
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-500
mA
Base Current
I
B
-100
mA
Total Power Dissipation
P
D
625
mW
Junction Temperature
T
J
+150
o
C
Storage Temperature
T
STG
-55 to +150
o
C
Absolute Maximum Ratings
(T
A
=25
o
C)
TO-92
.022(0.56)
.014(0.36)
.050
(1.27)
.148(3.76)
.132(3.36)
Typ
.190(4.83)
.170(4.33)
.100
(2.54)
Typ
.050
(1.27)
Typ
.022(0.56)
.014(0.36)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2
o
Typ
5
o
Typ.
2
o
Typ
3 2 1
5
o
Typ.
Dimensions in inches and (millimeters)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector-Base Breakdown Volatge
BV
CBO
-40
-
-
V
I
C
=-100
A, I
E
=0
Collector-Emitter Breakdown Voltage
BV
CEO
-20
-
-
V
I
C
=-1mA, I
B
=0
Emitter-Base Breakdown Volatge
BV
EBO
-5
-
-
V
I
E
=-100
A, I
C
=0
Collector Cutoff Current
I
CBO
-
-
-0.1
A
V
CB
=-25V, I
E
=0
Emitter Cutoff Current
I
EBO
-
-
-0.1
A
V
EB
=-3V, I
C
=0
Collector-Emitter Saturation Voltage
(1)
V
CE(sat)
-
-
-0.6
V
I
C
=-500mA, I
B
=-50mA
Base-Emitter Saturation Voltage
(1)
V
BE(sat)
-
-
-1.2
V
I
C
=-500mA, I
B
=-50mA
Base-Emitter On Voltage
(1)
V
BE(on)
-
-
-0.9
V
I
C
=-10mA, V
CE
=-1V
DC Current Gain
(1)
h
FE1
64
-
300
-
I
C
=-50mA, V
CE
=-1V
h
FE2
40
-
-
-
I
C
=-500mA, V
CE
=-1V
Transition Frequency
f
T
100
-
-
MHz
I
C
=-10mA, V
CE
=-1V, f=100MHz
Output Capacitance
C
ob
-
-
8
pF
V
CB
=-10V, f=1MHz
Electrical Characteristics
(Ratings at 25
o
C ambient temperature unless otherwise specified)
(1)Pulse Test: Pulse Width
380
s, Duty Cycle
2%
Rank
D
E
F
G
H
I
I1
I2
Range
64~91
78~112
96~135
112~166
144~202
176~300
176~246
214~300
Classification of h
FE1
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