DS30114 Rev. 8 - 2
1 of 3
BAS40W/-04/-05/-06
www.diodes.com
BAS40W/-04/-05/-06
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Case: SOT-323, Molded Plastic
Case Material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagrams Below
Marking: See Diagrams Below &Page 3
Weight: 0.006 grams (approx.)
Mechanical Data
A
M
J
L
F
D
B C
H
K
G
B
E
C
Features
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
40
V
RMS Reverse Voltage
V
R(RMS)
28
V
Forward Continuous Current (Note 1)
I
FM
200
mA
Non-Repetitive Peak Forward Surge Current
@ t = 1.0s
I
FSM
600
mA
Power Dissipation (Note 1)
P
d
200
mW
Thermal Resistance Junction to Ambient Air (Note 1)
R
qJA
625
C/W
Operating Temperature Range
T
j
-55 to +125
C
Storage Temperature Range
T
STG
-65 to +150
C
Maximum Ratings
@ T
A
= 25
C unless otherwise specified
Notes:
1. Device mounted on FR4 PC board with recommended pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
Characteristic
Symbol
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 2)
V
(BR)R
40
V
I
R
= 10
mA
Forward Voltage (Note 2)
V
F
380
1000
mV
mV
I
F
= 1.0mA, t
p
< 300
ms
I
F
= 40mA, t
p
< 300
ms
Leakage Current (Note 2)
I
R
200
nA
V
R
= 30V
Total Capacitance
C
T
5.0
pF
V
R
= 0, f = 1.0MHz
Reverse Recovery Time
t
rr
5.0
ns
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100
W
Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Low Forward Voltage Drop
Fast Switching
Ultra-Small Surface Mount Package
PN Junction Guard Ring for Transient and ESD
Protection
BAS40W Marking: K43
BAS40W-04 Marking: K44
BAS40W-05 Marking: K45
BAS40W-06 Marking: K46
SOT-323
Dim
Min
Max
A
0.25
0.40
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
E
0.30
0.40
G
1.20
1.40
H
1.80
2.20
J
0.0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.18
a
0
8
All Dimensions in mm
TOP VIEW
DS30114 Rev. 8 - 2
2 of 3
BAS40W/-04/-05/-06
www.diodes.com
0
100
200
T , AMBIENT TEMPERATURE (C)
A
Fig. 4 Power Derating Curve, Total Package
P
,
POWER
D
ISSIP
A
T
ION
(mW)
d
0
50
100
150
200
250
0
1
3
2
0
10
20
40
30
C
,
T
O
T
A
L
C
AP
ACIT
ANCE
(pF)
T
V , REVERSE VOLTAGE (V)
R
Fig. 3 Typical Capacitance
f = 1MHz
0.1
1
10
100
1000
10000
0
10
20
30
40
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Fig. 2 Typical Reverse Characteristics
I
,
INST
ANT
A
NE
O
US
REVERSE
CURRENT
(
nA)
R
T = -40C
A
T = 25C
A
T = 75C
A
T = 125C
A
T = 0C
A
0.01
0.1
1
0.001
0.0001
0
1.0
0.6
0.8
0.4
0.2
I
,
INST
ANT
ANE
O
US
F
O
R
W
ARD
CURRENT
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig. 1 Typical Forward Voltage
T = -40C
A
T = 125C
A
T = 75C
A
T = 25C
A
T = 0C
A
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