SOT23 SILICON EPITAXIAL SCHOTTKY
BARRIER SINGLE AND DUAL DIODES
ISSUE 3 JULY 95
PARTMARKING DETAILS
Single Diode L4Z
Common Anode L42
Series L43
Common Cathode L44
FEATURES
Low V
F
High current capability
APPLICATIONS
P.S.U.
Mobile telecomms. & SCSI
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Continuous Reverse Voltage
V
R
30
V
Forward Current
I
F
200
mA
Forward Voltage
V
F
400
mV
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Reverse Breakdown
Voltage
V
(BR)R
30
V
I
R
=10mA
Forward Voltage
V
F
500
240
320
400
500
1000
mV
mV
mV
mV
mV
I
F
=0.1mA
I
F
=1mA
I
F
=10mA
I
F
=30mA
I
F
=100mA
Reverse Current
I
R
4
A
V
R
=25V
Diode Capacitance
C
D
10
pF
f=1MHz,V
R
=1V
Reverse Recover
Time
t
rr
5
ns
switched from
I
F
=10mA to I
R
=10mA
R
L
=100
, Measured
at I
R
=1mA
1
3
1
3
2
Single
Diode
Common
Cathode
BAT54
BAT54C
Common
Anode
Series
BAT54S
BAT54A
1
3
2
1
2
3
BAT54
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