DS30132 Rev. 4 - 2
1 of 3
BAV70DW
www.diodes.com
BAV70DW
QUAD SURFACE MOUNT SWITCHING DIODE ARRAY
Case: SOT-363, Molded Plastic
Case Material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Orientation: See Diagram
Marking: KJA (see page 3)
Weight: 0.006 grams (approx.)
Mechanical Data
A
M
J
L
D
B C
H
K
G
F
TOP VIEW
C
2
A
1
A
1
A
2
A
2
C
1
Features
SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
E
0.30
0.40
G
1.80
2.20
H
1.80
2.20
J
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
a
0
8
All Dimensions in mm
Fast Switching Speed
Ultra-Small Surface Mount Package
For General Purpose Switching Applications
High Conductance
Two "BAV70" Circuits In One Package
Characteristic
Symbol
Value
Unit
Non-Repetitive Peak Reverse Voltage
V
RM
100
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
75
V
RMS Reverse Voltage
V
R(RMS)
53
V
Forward Continuous Current (Note 1)
I
FM
300
mA
Average Rectified Output Current (Note 1)
I
O
150
mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0
ms
@ t = 1.0s
I
FSM
2.0
1.0
A
Power Dissipation (Note 1)
P
d
200
mW
Thermal Resistance Junction to Ambient Air (Note 1)
R
qJA
625
C/W
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
C
Maximum Ratings
@ T
A
= 25
C unless otherwise specified
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
Characteristic
Symbol
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 2)
V
(BR)R
75
V
I
F
= 2.5
mA
Forward Voltage (Note 2)
V
F
0.715
0.855
1.0
1.25
V
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
Reverse Current (Note 2)
I
R
2.5
50
30
25
mA
mA
mA
nA
V
R
= 75V
V
R
= 75V, T
j
= 150
C
V
R
= 25V, T
j
= 150
C
V
R
= 20V
Total Capacitance
C
T
2.0
pF
V
R
= 0, f = 1.0MHz
Reverse Recovery Time
t
rr
4.0
ns
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100
W
Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
T
C
U
D
O
R
P
W
E
N
DS30132 Rev. 4 - 2
2 of 3
BAV70DW
www.diodes.com
T
C
U
D
O
R
P
W
E
N
0.1
1
10
100
1000
10000
0
20
40
60
80
100
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Fig. 2 Typical Reverse Characteristics
I,
I
N
S
T
A
N
T
A
N
E
O
US
REVERSE
CURRENT
(
nA)
R
T = -40C
A
T = 25C
A
T = 75C
A
T = 125C
A
T = 150C
A
T = 0C
A
0.1
1
0.01
0.001
0
1.5
1.0
0.5
I
,
INST
ANT
ANEOUS
FOR
W
A
RD
CURRENT
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig. 1 Forward Characteristics
T = -40C
A
T = 150C
A
T = 75C
A
T = 25C
A
T = 0C
A
0
50
100
150
200
250
25
0
50
75
100
125
150
P
,
POWER
D
ISSIP
A
TION
(mW)
d
T , AMBIENT TEMPERATURE (
C)
A
Fig. 4 Power Derating Curve
300
0.0
0.2
0.4
0.6
0.8
1.8
1.6
1.4
1.2
1.0
2.0
0
10
20
40
30
C
,
T
O
T
A
L
C
AP
ACIT
ANCE
(pF)
T
V , REVERSE VOLTAGE (V)
R
Fig. 3 Typical Capacitance vs. Reverse Voltage
f = 1.0MHz
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