DS11208 Rev. 9 - 2
1 of 3
BC807-16/-25/-40
BC807-16/ -25/ -40
PNP SURFACE MOUNT TRANSISTOR
Maximum Ratings
@ T
A
= 25C unless otherwise specified
Notes:
1. Device mounted on ceramic substrate 0.7mm; 2.5cm
2
area.
2. Short duration pulse test used to minimize self-heating effect.
Characteristic
Symbol
Value
Unit
Collector-Emitter Voltage
V
CEO
-45
V
Emitter-Base Voltage
V
EBO
-5.0
V
Collector Current
I
C
-500
mA
Peak Collector Current
I
CM
-1000
mA
Peak Emitter Current
I
EM
-1000
mA
Power Dissipation at T
SB
= 50C (Note 1)
P
d
310
mW
Thermal Resistance, Junction to Substrate Backside (Note 1)
R
qJSB
320
C/W
Thermal Resistance, Junction to Ambient Air (Note 1)
R
qJA
403
C/W
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
C
Features
Ideally Suited for Automatic Insertion
Epitaxial Planar Die Construction
For Switching, AF Driver and Amplifier
Applications
Complementary NPN Types Available (BC817)
Case: SOT-23, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Pin Connections: See Diagram
Marking (See Page 3): BC807-16 5A, K5A
BC807-25 5B, K5B
BC807-40 5C,K5C
Ordering & Date Code Information: See Page 3
Approx. Weight: 0.008 grams
Mechanical Data
Electrical Characteristics
@ T
A
= 25C unless otherwise specified
Characteristic (Note 2)
Symbol
Min
Typ
Max
Unit
Test Condition
DC Current Gain
Current Gain Group -16
-25
-40
Current Gain Group -16
-25
-40
h
FE
100
160
250
60
100
170
--
250
400
600
--
--
--
--
V
CE
= 1.0V, I
C
= 100mA
V
CE
= 1.0V, I
C
= 300mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
--
--
-0.7
V
I
C
= 500mA, I
B
= 50mA
Base-Emitter Voltage
V
BE
--
--
-1.2
V
V
CE
= 1.0V, I
C
= 300mA
Collector-Emitter Cutoff Current
I
CES
--
--
-100
-5.0
nA
A
V
CE
= 45V
V
CE
= 25V, T
j
= 150C
Emitter-Base Cutoff Current
I
EBO
--
--
-100
nA
V
EB
= 4.0V
Gain Bandwidth Product
f
T
100
--
--
MHz
V
CE
= 5.0V, I
C
= 10mA,
f = 50MHz
Collector-Base Capacitance
C
CBO
--
--
12
pF
V
CB
= 10V, f = 1.0MHz
A
E
J
L
TOP VIEW
M
B
C
H
G
D
D
K
C
B
E
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.85
0.80
a
0
8
All Dimensions in mm
DS11208 Rev. 9 - 2
2 of 3
BC807-16/-25/-40
10
100
1000
1
10
100
1000
f
,
GAIN
BANDWIDTH
PRODUCT
(MHz)
T
-I , COLLECTOR CURRENT (mA)
Fig. 2, Gain-Bandwidth Product vs Collector Current
C
T = 25 C
f = 20MHz
A
-V
= 5.0V
CE
1.0V
0
0.1
0.2
0.3
0.4
0.5
1
10
100
1000
-V
,
COLLECT
OR
SA
TURA
TION
VOL
T
AGE
(V)
CESA
T
-I , COLLECTOR CURRENT (mA)
Fig. 3, Collector Sat. Voltage vs Collector Current
C
typical
limits
at T = 25 C
A
-I / -I = 10
C
B
150 C
25 C
-50 C
0.1
10
100
1000
0.1
1
10
100
1000
h
,
DC
CURRENT
GAIN
FE
-I , COLLECTOR CURRENT (mA)
Fig. 4, DC Current Gain vs Collector Current
C
-V
= 1V
CE
150 C
25 C
-50 C
0
100
200
300
400
500
0
1
2
-I
,
COLLECT
OR
CURRENT
(mA)
C
-V
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 5, Typical Emitter-Collector Characteristics
CE
-I = 0.2mA
B
3.2
2.8
2
1.4
1.2
0.8
0.6
0.4
1.6
2.4
1.8
0
100
200
300
400
0
100
200
P
,
POWER
DISSIP
A
TION
(mW)
d
T
, SUBSTRATE TEMPERATURE ( C)
Fig. 1, Power Derating Curve
SB
See Note 1
0
20
40
60
80
100
0
10
20
-I
,
COLLECT
OR
CURRENT
(mA)
C
-V
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 6, Typical Emitter-Collector Characteristics
CE
-I = 0.05mA
B
0.1
0.15
0.2
0.25
0.3
0.35
DS11208 Rev. 9 - 2
3 of 3
BC807-16/-25/-40
Device*
Packaging
Shipping
BC807-xx-7
SOT-23
3000/Tape & Reel
Ordering Information
Notes:
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
*xx = gain group, eg. BC807-16-7.
XXX
YM
Marking Information
XXX = Product Type Marking Code (See Page 1):e.g. K5A = BC807-16
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Year
1998
1999
2000
2001
2002
2003
2004
Code
J
K
L
M
N
P
R
PDF 
ZIP