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Электронный компонент: BC847BS

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DS30222 Rev. 3 - 2
1 of 3
BC847BS
BC847BS
DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
Maximum Ratings
@ T
A
= 25C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
45
V
Emitter-Base Voltage
V
EBO
5.0
V
Collector Current
I
C
100
mA
Peak Collector Current
I
CM
200
mA
Peak Base Current
I
BM
200
mA
Power Dissipation (Note 1)
P
d
200
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
qJA
500
C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +125
C
Ideally Suited for Automatic Insertion
For Switching and AF Amplifier Applications
Ultra-Small Surface Mount Package
Case: SOT-363, Molded Plastic
Case material - UL Flammability Rating
Classification 94V - 0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: K1F (See Page 2)
Weight: 0.006 grams
Ordering & Date Code Information: See Page 2
Mechanical Data
A
M
J
L
D
B C
H
K
G
F
C
2
B
1
E
1
E
2
B
2
C
1
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on ourwebsite at http://www.diodes.com/datasheets/ap02001.pdf.
SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
a
8
All Dimensions in mm
DS30222 Rev. 3 - 2
2 of 3
BC847BS
Electrical Characteristics
@ T
A
= 25C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
DC Current Gain (Note 2)
h
FE
200
--
450
--
V
CE
= 5.0V, I
C
= 2.0mA
Collector-Emitter Saturation Voltage (Note 2)
V
CE(SAT)
--
--
--
100
400
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage (Note 2)
V
BE(SAT)
--
755
--
mV
I
C
= 10mA, I
B
= 0.5mA
Base-Emitter Voltage (Note 2)
V
BE
580
665
700
mV
V
CE
= 5.0V, I
C
= 2.0mA
Collector Cutoff Current (Note 2)
I
CBO
I
CBO
--
--
--
15
5.0
nA
A
V
CB
= 30V, I
E
= 0
V
CB
= 30V, T
j
= 125C
Emitter Cutoff Current (Note 2)
I
EBO
--
--
100
nA
V
EB
= 5.0V, I
C
= 0
Gain Bandwidth Product
f
T
100
--
--
MHz
V
CE
= 5.0V, I
C
= 10mA,
f = 100MHz
Collector-Base Capacitance
C
CBO
--
--
1.5
pF
V
CB
= 10V, f = 1.0MHz
Emitter-Base Capacitance
C
EBO
--
11
--
pF
V
EB
= 0.5V, f = 1.0MHz
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Year
1998
1999
2000
2001
2002
2003
2004
Code
J
K
L
M
N
P
R
Date Code Key
K1F = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K1F
K1F
YM
YM
Marking Information
Notes: 2. Short duration pulse test used to minimize self-heating effect.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Device
Packaging
Shipping
BC847BS-7
SOT-363
3000/Tape & Reel
Ordering Information
(Note 3)
DS30222 Rev. 3 - 2
3 of 3
BC847BS
1
10
100
1000
1.0
10
100
0.1
0.01
h
D
C
CURRENT
GAIN
FE,
I , COLLECTOR CURRENT (mA)
Fig. 2, DC Current Gain vs Collector Current
C
V
= 5V
CE
100 C
T = 25 C
A
-50 C
0
0.1
0.2
0.3
0.4
0.5
0.1
1.0
10
100
V
,
COLLECT
OR
SA
TURA
TION
VOL
T
AGE
(V)
CE
I , COLLECTOR CURRENT (mA)
Fig. 3, Collector Saturation Voltage vs Collector Current
C
I / I = 20
C
B
T = 100 C
A
25 C
-50 C
10
100
1000
0.1
1.0
10
100
f
,
GAIN
BANDWIDTH
PRODUCT
(MHz)
T
I , COLLECTOR CURRENT (mA)
Fig. 4, Gain Bandwidth Product vs Collector Current
C
T = 25 C
A
V
= 10V
CE
5V
2V
0
50
100
150
200
250
0
100
200
P
,
POWER
DISSIP
A
TION
(mW)
d
T , AMBIENT TEMPERATURE ( C)
Fig. 1, Power Derating Curve
A
(see Note 1)
Notes:
1. Device mounted on FR4 printed circuit board.