DS30274 Rev. A-2
1 of 3
BC847AT, BT, CT
BC847AT, BT, CT
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Maximum Ratings
@ T
A
= 25C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
45
V
Emitter-Base Voltage
V
EBO
6.0
V
Collector Current
I
C
100
mA
Power Dissipation (Note 1)
P
d
150
mW
Thermal Resistance, Junction to Ambient
R
qJA
833
C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
C
Epitaxial Die Construction
Complementary PNP Type Available
(BC857AT,BT,CT)
Ultra-Small Surface Mount Package
Type
Marking
BC847A
1E
BC847B
1F
BC847C
1M
Case: SOT-523, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Weight: 0.002 grams (approx.)
Mechanical Data
A
B
C
C
B
TOP VIEW
G
M
L
J
D
H
N
K
E
Notes:
1. Device mounted on FR-4 PC board with recommended pad layout.
2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
NEW
P
RODUCT
SOT-523
Dim
Min
Max
Typ
A
0.15
0.30
0.22
B
0.75
0.85
0.80
C
1.45
1.75
1.60
D
0.50
G
0.90
1.10
1.00
H
1.50
1.70
1.60
J
0.00
0.10
0.05
K
0.60
0.80
0.75
L
0.10
0.30
0.22
M
0.10
0.20
0.12
N
0.45
0.65
0.50
All Dimensions in mm
Ordering Information
Device
Packaging
Shipping
BC847AT-7
SOT-523
3000/Tape & Reel
BC847BT-7
SOT-523
3000/Tape & Reel
BC847CT-7
SOT-523
3000/Tape & Reel
(Note 2)
DS30274 Rev. A-2
2 of 3
BC847AT, BT, CT
Electrical Characteristics
@ T
A
= 25C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
DC Current Gain (Note 3)
Current Gain A
B
C
Current Gain A
B
C
h
FE
--
--
--
110
200
420
--
150
270
--
290
520
--
--
--
220
450
800
--
V
CE
= 5.0V, I
C
= 2.0mA
Collector-Emitter Saturation Voltage (Note 3)
V
CE(SAT)
--
--
250
600
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage (Note 3)
V
BE(SAT)
--
700
900
--
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Voltage (Note 3)
V
BE
580
--
660
--
700
770
mV
V
CE
= 5.0V, I
C
= 2.0mA
V
CE
=5.0V, I
C
= 10mA
Collector-Emitter Cutoff Current (Note 3)
I
CBO
I
CBO
--
--
15
5.0
nA
A
V
CB
= 30V
V
CB
= 30V, T
A
= 150C
Gain Bandwidth Product
f
T
100
--
--
MHz
V
CE
= 5.0V, I
C
= 10mA,
f = 100MHz
Output Capacitance
C
OBO
--
--
4.5
pF
V
CB
= 10V, f = 1.0MHz
BC847BT
Noise Figure BC847CT
NF
--
--
10
4.0
dB
V
CE
= 5V, R
S
= 2.0k
W,
f = 1.0kHz, BW = 200Hz
NEW
P
RODUCT
Notes:
3. Short duration test pulse used to minimize self-heating effect.
DS30274 Rev. A-2
3 of 3
BC847AT, BT, CT
1
10
100
1000
1.0
10
100
0.1
0.01
h
D
C
CURRENT
GAIN
FE,
I , COLLECTOR CURRENT (mA)
Fig. 2, DC Current Gain vs Collector Current
C
V
= 5V
CE
100 C
T = 25 C
A
-50 C
0
0.1
0.2
0.3
0.4
0.5
0.1
1.0
10
100
V
,
COLLECT
OR
SA
TURA
TION
VOL
T
AGE
(V)
CE
I , COLLECTOR CURRENT (mA)
Fig. 3, Collector Saturation Voltage vs Collector Current
C
I / I = 20
C
B
T = 100 C
A
25 C
-50 C
10
100
1000
0.1
1.0
10
100
f
,
GAIN
BANDWIDTH
PRODUCT
(MHz)
T
I , COLLECTOR CURRENT (mA)
Fig. 4, Gain Bandwidth Product vs Collector Current
C
T = 25 C
A
V
= 10V
CE
5V
2V
0
100
150
50
200
250
0
100
200
P
,
POWER
DISSIP
A
TION
(mW)
d
Fig. 1, Power Derating Curve
T , AMBIENT TEMPERATURE (C)
A
(see Note 1)
Notes:
1. Device mounted on FR-4 PC board with recommended pad layout.
NEW
P
RODUCT
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