Maximum Ratings PNP BC857B Section
@ T
A
= 25C unless otherwise specified
DS30278 Rev. 2 - 2
1 of 3
BC847PN
BC847PN
COMPLEMENTARY PAIR SMALL SIGNAL SURFACE
MOUNT TRANSISTOR
Features
Maximum Ratings NPN BC847B Section
@ T
A
= 25C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
45
V
Emitter-Base Voltage
V
EBO
6.0
V
Collector Current
I
C
100
mA
Peak Collector Current
I
CM
200
mA
Peak Emitter Current
I
EM
200
mA
Epitaxial Die Construction
Two internal isolated NPN/PNP Transistors in
one package
Ultra-Small Surface Mount Package
Mechanical Data
A
M
J
L
D
B C
H
K
G
F
C
1
B
2
E
2
E
1
B
1
C
2
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Case: SOT-363, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking (See Page 3): K7P
Ordering & Date Code Information: See Page 3
Weight: 0.006 grams (approx.)
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 1)
P
d
200
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
qJA
625
C/W
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
C
Maximum Ratings Total Device
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-45
V
Emitter-Base Voltage
V
EBO
-5.0
V
Collector Current
I
C
-100
mA
Peak Collector Current
I
CM
-200
mA
Peak Emitter Current
I
EM
-200
mA
SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
a
8
All Dimensions in mm
DS30278 Rev. 2 - 2
2 of 3
BC847PN
Electrical Characteristics NPN BC847B Section
@ T
A
= 25C unless otherwise specified
Notes:
2. Short duration pulse test used to minimize self-heating effect.
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage (Note 2)
V(
BR)CBO
50
--
--
V
I
C
= 10
mA, I
B
= 0
Collector-Emitter Breakdown Voltage (Note 2)
V(
BR)CEO
45
--
--
V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage (Note 2)
V(
BR)EBO
6
--
--
V
I
E
= 1
mA, I
C
= 0
DC Current Gain (Note 2)
h
FE
200
290
450
--
V
CE
= 5.0V, I
C
= 2.0mA
Collector-Emitter Saturation Voltage (Note 2)
V
CE(SAT)
--
90
200
250
600
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage (Note 2)
V
BE(SAT)
--
700
900
--
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Voltage (Note 2)
V
BE(ON)
580
--
660
--
700
720
mV
V
CE
= 5.0V, I
C
= 2.0mA
V
CE
=5.0V, I
C
= 10mA
Collector-Cutoff Current (Note 2)
I
CBO
I
CBO
--
--
--
--
15
5.0
nA
A
V
CB
= 30V
V
CB
= 30V, T
A
= 150C
Gain Bandwidth Product
f
T
100
300
--
MHz
V
CE
= 5.0V, I
C
= 10mA,
f = 100MHz
Collector-Base Capacitance
C
CBO
--
3.5
6.0
pF
V
CB
= 10V, f = 1.0MHz
Noise Figure
NF
--
2.0
10
dB
V
CE
= 5V, I
C
= 200A,
R
G
= 2.0k
W,
f = 1.0kHz,
Df = 200Hz
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage (Note 2)
V(
BR)CBO
-50
--
--
V
I
C
= 10
mA, I
B
= 0
Collector-Emitter Breakdown Voltage (Note 2)
V(
BR)CEO
-45
--
--
V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage (Note 2)
V(
BR)EBO
-5
--
--
V
I
E
= 1
mA, I
C
= 0
DC Current Gain (Note 2)
h
FE
220
290
475
--
V
CE
= 5.0V, I
C
= 2.0mA
Collector-Emitter Saturation Voltage (Note 2)
V
CE(SAT)
--
-75
-250
-300
-650
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage (Note 2)
V
BE(SAT)
--
-700
-850
--
-950
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Voltage (Note 2)
V
BE(ON)
-600
--
-650
--
-750
-820
mV
V
CE
= 5.0V, I
C
= 2.0mA
V
CE
=5.0V, I
C
= 10mA
Collector-Cutoff Current (Note 2)
I
CBO
I
CBO
--
--
--
--
-15
-4.0
nA
A
V
CB
= 30V
V
CB
= 30V, T
A
= 150C
Gain Bandwidth Product
f
T
100
200
--
MHz
V
CE
= 5.0V, I
C
= 10mA,
f = 100MHz
Collector-Base Capacitance
C
CBO
--
3
4.5
pF
V
CB
= 10V, f = 1.0MHz
Noise Figure
NF
--
--
10
dB
V
CE
= 5V, I
C
= 200A,
R
G
= 2.0k
W,
f = 1.0kHz,
Df = 200Hz
Electrical Characteristics PNP BC857B Section
@ T
A
= 25C unless otherwise specified
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