DS18004 Rev. 19 - 2
1 of 3
BZT52C2V4 - BZT52C39
Planar Die Construction
500mW Power Dissipation on Ceramic PCB
General Purpose, Medium Current
Ideally Suited for Automated Assembly
Processes
Features
Maximum Ratings
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Value
Unit
Forward Voltage (Note 2)
@ I
F
= 10mA
V
F
0.9
V
Power Dissipation (Note 1)
P
d
500
mW
Thermal Resistance, Junction to Ambient Air (Note 1)
R
qJA
305
C/W
Operating and Storage Temperature Range
T
j,
T
STG
-65 to +150
C
Notes:
1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm
2
.
2. Short duration test pulse used to minimize self-heating effect.
Mechanical Data
BZT52C2V4 - BZT52C39
SURFACE MOUNT ZENER DIODE
A
B
C
D
E
G
a
H
J
SOD-123
Dim
Min
Max
A
3.55
3.85
B
2.55
2.85
C
1.40
1.70
D
--
1.35
E
0.55 Typical
G
0.25
--
H
0.11 Typical
J
--
0.10
a
0
8
All Dimensions in mm
Case: SOD-123, Plastic
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: See Below
Weight: 0.01 grams (approx.)
Ordering Information: See Page 4
Marking Information
XX
YM
XX = Product Type Marking Code (See Page 2)
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
Code
J
K
L
M
N
P
R
S
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS18004 Rev. 19 - 2
2 of 3
BZT52C2V4 - BZT52C39
Type
Number
Marking
Code
Zener Voltage Range
(Note 2)
Maximum Zener
Impedance (Note 3)
Maximum
Reverse
Current
(Note 2)
Typical
Temperature
Coefficient
@ I
ZTC
mV/
C
Test
Current
I
ZTC
V
z
@I
ZT
I
ZT
Z
ZT @
I
ZT
Z
ZK
@ I
ZK
I
ZK
I
R
@ V
R
Nom (V)
Min (V)
Max (V)
mA
W
mA
uA
V
Min
Max
mA
BZT52C2V4
WX
2.4
2.2
2.6
5
100
600
1.0
50
1.0
-3.5
0
5
BZT52C2V7
W1
2.7
2.5
2.9
5
100
600
1.0
20
1.0
-3.5
0
5
BZT52C3V0
W2
3.0
2.8
3.2
5
95
600
1.0
10
1.0
-3.5
0
5
BZT52C3V3
W3
3.3
3.1
3.5
5
95
600
1.0
5.0
1.0
-3.5
0
5
BZT52C3V6
W4
3.6
3.4
3.8
5
90
600
1.0
5.0
1.0
-3.5
0
5
BZT52C3V9
W5
3.9
3.7
4.1
5
90
600
1.0
3.0
1.0
-3.5
0
5
BZT52C4V3
W6
4.3
4.0
4.6
5
90
600
1.0
3.0
1.0
-3.5
0
5
BZT52C4V7
W7
4.7
4.4
5.0
5
80
500
1.0
3.0
2.0
-3.5
0.2
5
BZT52C5V1
W8
5.1
4.8
5.4
5
60
480
1.0
2.0
2.0
-2.7
1.2
5
BZT52C5V6
W9
5.6
5.2
6.0
5
40
400
1.0
1.0
2.0
-2
2.5
5
BZT52C6V2
WA
6.2
5.8
6.6
5
10
150
1.0
3.0
4.0
0.4
3.7
5
BZT52C6V8
WB
6.8
6.4
7.2
5
15
80
1.0
2.0
4.0
1.2
4.5
5
BZT52C7V5
WC
7.5
7.0
7.9
5
15
80
1.0
1.0
5.0
2.5
5.3
5
BZT52C8V2
WD
8.2
7.7
8.7
5
15
80
1.0
0.7
5.0
3.2
6.2
5
BZT52C9V1
WE
9.1
8.5
9.6
5
15
100
1.0
0.5
6.0
3.8
7.0
5
BZT52C10
WF
10
9.4
10.6
5
20
150
1.0
0.2
7.0
4.5
8.0
5
BZT52C11
WG
11
10.4
11.6
5
20
150
1.0
0.1
8.0
5.4
9.0
5
BZT52C12
WH
12
11.4
12.7
5
25
150
1.0
0.1
8.0
6.0
10.0
5
BZT52C13
WI
13
12.4
14.1
5
30
170
1.0
0.1
8.0
7.0
11.0
5
BZT52C15
WJ
15
13.8
15.6
5
30
200
1.0
0.1
10.5
9.2
13.0
5
BZT52C16
WK
16
15.3
17.1
5
40
200
1.0
0.1
11.2
10.4
14.0
5
BZT52C18
WL
18
16.8
19.1
5
45
225
1.0
0.1
12.6
12.4
16.0
5
BZT52C20
WM
20
18.8
21.2
5
55
225
1.0
0.1
14.0
14.4
18.0
5
BZT52C22
WN
22
20.8
23.3
5
55
250
1.0
0.1
15.4
16.4
20.0
5
BZT52C24
WO
24
22.8
25.6
5
70
250
1.0
0.1
16.8
18.4
22.0
5
BZT52C27
WP
27
25.1
28.9
2
80
300
0.5
0.1
18.9
21.4
25.3
2
BZT52C30
WQ
30
28.0
32.0
2
80
300
0.5
0.1
21.0
24.4
29.4
2
BZT52C33
WR
33
31.0
35.0
2
80
325
0.5
0.1
23.1
27.4
33.4
2
BZT52C36
WS
36
34.0
38.0
2
90
350
0.5
0.1
25.2
30.4
37.4
2
BZT52C39
WT
39
37.0
41.0
2
130
350
0.5
0.1
27.3
33.4
41.2
2
Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Notes:
1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm
2
.
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.
Ordering Information
(Note 4)
Device
Packaging
Shipping
(Type Number)-7*
SOD-123
3000/Tape & Reel
* Add "-7" to the appropriate type number in Table 1 above example: 6.2V Zener = BZT52C6V2-7.
Notes:
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
DS18004 Rev. 19 - 2
3 of 3
BZT52C2V4 - BZT52C39
0
0.1
0.2
0.3
0.4
0.5
25
0
50
75
100
125
150
P,
P
O
WER
DISSIP
AT
I
O
N
(W)
D
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Power Dissipation vs Ambient Temperature
A
0.6
0
10
20
30
40
50
0 1
2
3
4
5
6
7
8
9
10
I
,
ZENER
C
URRENT
(
mA
)
Z
V , ZENER VOLTAGE (V)
Fig. 2 Zener Breakdown Characteristics
Z
T = 25C
j
C2V7
C3V3
C3V9
C4V7
C5V6
C6V8
C8V2
C6V2
Test Current I
5.0mA
Z
0
10
20
30
0
I
,
ZENER
CURRENT
(mA)
Z
V , ZENER VOLTAGE (V)
Fig. 3 Zener Breakdown Characteristics
Z
10
20
30
40
T = 25C
j
Test current I
5mA
Z
Test current I
2mA
Z
C10
C12
C18
C22
C27
C33
C36
C15
0
2
4
6
8
10
10 20 30 40 50 60 70 80 90 100
I
,
ZENER
CURRENT
(mA)
Z
V , ZENER VOLTAGE (V)
Fig. 4 Zener Breakdown Characteristics
Z
Test Current I
2mA
Z
C39
T = 25C
j
C
,
T
O
T
A
L
CAP
ACIT
ANCE
(pF)
T
10
100
1000
10
100
1
V , NOMINAL ZENER VOLTAGE (V)
Fig. 5 Total Capacitance vs Nominal Zener Voltage
Z
T = 25 C
f = 1MHz
j
V = 1V
R
V = 2V
R
V = 1V
R
V = 2V
R
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