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Электронный компонент: MBR1050CT

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D
S30027 Rev. A-2 1 of 2 MBR1030CT-MBR1060CT
MBR1030CT - MBR1060CT
10A SCHOTTKY BARRIER RECTIFIER
Features
L
M
A
N
P
D
E
K
C
B
G
1 2 3
J
H H
Pin 1
Pin 3
Pin 2
Case
TO-220AB
Dim
Min
Max
A
14.22
15.88
B
9.65
10.67
C
2.54
3.43
D
5.84
6.86
E
6.35
G
12.70
14.73
H
2.29
2.79
J
0.51
1.14
K
3.53
4.09
L
3.56
4.83
M
1.14
1.40
N
0.30
0.64
P
2.03
2.92
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Weight: 2.24 grams (approx.)
Mounting Position: Any
Marking: Type Number
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
MBR
1030CT
MBR
1035CT
MBR
1040CT
MBR
1045CT
MBR
1050CT
MBR
1060CT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
30
35
40
45
50
60
V
RMS Reverse Voltage
V
R(RMS)
21
24.5
28
31.5
35
42
V
Average Rectified Output Current
(Note 1)
@ T
C
= 105
C
I
O
10
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
125
A
Repetitive Peak Reverse Surge Current
@ t
2.0ms
I
RRM
1.0
A
Forward Voltage Drop
@ I
F
= 5.0A, T
C
= 125
C
@ I
F
= 5.0A, T
C
= 25
C
@ I
F
= 10A, T
C
= 25
C
V
FM
0.57
0.70
0.84
0.70
0.80
0.95
V
Peak Reverse Current
@ T
C
= 25
C
at Rated DC Blocking Voltage
@ T
C
= 125
C
I
RM
0.1
15
mA
Typical Junction Capacitance (Note 2)
C
j
150
pF
Typical Thermal Resistance Junction to Case (Note 1)
R
qJC
30
K/W
Voltage Rate of Change (Rated V
R
)
dV/dt
1000
V/
ms
Operating and Storage Temperature Range
T
j,
T
STG
-65 to +150
C
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
D
S30027 Rev. A-2 2 of 2 MBR1030CT-MBR1060CT
I
,
INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
0.1
1.0
10
100
0
0.4
0.8
1.2
1.6
T = 25 C
j
Pulse Width = 300 s
2% Duty Cycle
MBR1030CT - MBR1045CT
MBR1050CT / MBR1060CT
0
50
100
150
200
250
300
1
10
100
I
,
PEAK
FOR
W
ARD
SURGE
CURRENT
(A)
FSM
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
10
100
1000
0.1
1.0
10
100
C
,
JUNCTION
CAP
ACIT
ANCE
(pF)
j
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
T = 25 C
f = 1.0MHz
j
0
2
4
6
8
10
0
50
100
150
I
,
A
VERAGE
FWD
CURRENT
(A)
(A
V)
T , CASE TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
C