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Электронный компонент: MBR1060

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DS30276 Rev. B-2
1 of 2
SDM20E40C
SDM20E40C
DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE
Case: SC-59, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: KSS + Date Code
Weight: 0.008 grams (approx.)
Mechanical Data
A
E
J
L
M
B C
H
G
D
K
TOP VIEW
KSS
Features
Maximum Ratings
@ T
A
= 25C unless otherwise specified
Notes:
1. Mean output current per element:I
O
/2.
2. Short duration test pulse to minimize self-heating effect.
Electrical Characteristics
@ T
A
= 25C unless otherwise specified
Low Forward Voltage Drop
Common Cathode Configuration
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
40
V
RMS Reverse Voltage
V
R(RMS)
28
V
Average Rectified Current (Note 1)
I
O
0.4
A
Non-Repetitive Peak Forward Surge Current @ t = 8.3ms
I
FSM
2
A
Power Dissipation
P
d
400
mW
Operating Temperature Range
T
OP
-30 to +85
C
Junction Temperature Range
T
j
-30 to +125
C
Storage Temperature Range
T
STG
-40 to +125
C
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 2)
V
(BR)R
40
V
I
R
= 500mA
Forward Voltage (Note 2)
V
F
300
500
mV
I
F
= 10mA
I
F
= 200mA
Leakage Current (Note 2)
I
R
70
mA
V
R
= 25V
Junction Capacitance
C
j
100
pF
V
R
= 0V, f = 1.0MHz
NEW
P
RODUCT
SC-59
Dim
Min
Max
A
0.30
0.50
B
1.40
1.80
C
2.50
3.00
D
0.85
1.05
E
0.30
0.70
G
1.70
2.10
H
2.70
3.10
J
0.10
K
1.00
1.40
L
0.55
0.70
M
0.10
0.35
All Dimensions in mm
DS30276 Rev. B-2
2 of 2
SDM20E40C
0.1
1.0
10
100
1000
I
,
INST
ANT
ANE
O
US
F
O
R
W
ARD
CURRENT
(mA)
F
0
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 1 Typical Forward Characteristics
R
100
200
300
400
500
600
700
T = 125 C
A
T = 75 C
A
T = 25 C
A
T = -40 C
A
0
10
20
30
40
I
,
INST
ANT
ANE
O
US
REVERSE
CURRENT
(uA)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics
R
T = 0C
A
T = 125C
A
T = 75C
A
T = 25C
A
1000
100
10
1
0.1
10,000
1
10
100
0
15
10
25
30
35
20
40
C
,
JUNCTION
CAP
ACIT
ANCE
(pF)
j
V , REVERSE VOLTAGE (V)
Fig. 3 Typical Junction Capacitance
R
5.0
T = 25 C
j
f = 1MHz
NEW
P
RODUCT