D
S23017 Rev. E-2 1 of 2 MBR3030PT - MBR3060PT
MBR3030PT - MBR3060PT
30A SCHOTTKY BARRIER RECTIFIER
Features
A
B
E
G
J
L
M
N
P*
*2 Places
Q
K
S
M
H
R
D
C
TO-3P
Dim
Min
Max
A
3.20
3.50
B
4.59
5.16
C
20.80
21.30
D
19.70
20.20
E
2.10
2.40
G
0.51
0.76
H
15.90
16.40
J
1.70
2.70
K
3.10
3.30
L
3.50
4.51
M
5.20
5.70
N
1.12
1.22
P
1.93
2.18
Q
2.97
3.22
R
11.70
12.80
S
4.30 Typical
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Marking: Type Number
Weight: 5.6 grams (approx.)
Mounting Position: Any
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
MBR
3030PT
MBR
3035PT
MBR
3040PT
MBR
3045PT
MBR
3050PT
MBR
3060PT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
30
35
40
45
50
60
V
RMS Reverse Voltage
V
R(RMS)
21
24.5
28
31.5
35
42
V
Average Rectified Output Current
@ T
C
= 125
C
(Note 1)
I
O
30
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
200
A
Forward Voltage Drop
@ I
F
= 20A, T
C
= 25
C
per element (Note 3)
@ I
F
= 20A, T
C
= 125
C
V
FM
0.65
0.60
0.75
0.65
V
Peak Reverse Current
@ T
C
= 25
C
at Rated DC Blocking Voltage, per element @ T
C
= 125
C
I
RM
1.0
60
5.0
100
mA
Typical Junction Capacitance
(Note 2)
C
j
700
pF
Typical Thermal Resistance Junction to Case
(Note 1)
R
qJc
1.4
2.0
K/W
Voltage Rate of Change (Rated V
R
)
dV/dt
10,000
V/s
Operating and Storage Temperature Range
T
j,
T
STG
-65 to +150
C
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Pulse width
300 ms, duty cycle 2%.
D
S23017 Rev. E-2 2 of 2 MBR3030PT - MBR3060PT
0.1
1.0
10
I
,
INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
(A)
F
V , INSTANTANEOUS F0RWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
100
0
0.2
0.4
MBR 3030PT - MBR 3045PT
MBR 3050PT - MBR 3060PT
0.6
0.8
T = 25C
j
Pulse width = 300s
2% duty cycle
0
50
100
150
200
250
300
1
10
100
I
,
PEAK
FWD
SURGE
CURRENT
(A)
FSM
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
T = 25C
j
8.3ms Single half-wave
JEDEC Method
100
1000
4000
0.1
1.0
10
100
C
,
CAP
ACIT
ANCE
(pF)
j
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
T = 25C
f = 1MHz
j
0.01
0.1
1.0
10
0
20
40
60
80
100
120
140
I
,
INST
ANT
ANEOUS
REVERSE
CURRENT
(mA)
R
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
T = 125C
j
T = 75C
j
T = 25C
j
100
0
50
100
150
I
,
A
VERAGE
FWD
CURRENT
(A)
(A
V)
T , CASE TEMPERATURE (C)
Fig. 1 Fwd Current Derating Curve
C
0
6
12
18
24
30
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