D
S23019 Rev. E-2 1 of 2 MBR4030PT - MBR4060PT
MBR4030PT - MBR4060PT
40A SCHOTTKY BARRIER RECTIFIER
Features
A
B
E
G
J
L
M
N
K
S
M
H
R
D
C
Q
P*
*2 Places
TO-3P
Dim
Min
Max
A
3.20
3.50
B
4.59
5.16
C
20.80
21.30
D
19.70
20.20
E
2.10
2.40
G
0.51
0.76
H
15.90
16.40
J
1.70
2.70
K
3.10
3.30
L
3.50
4.51
M
5.20
5.70
N
1.12
1.22
P
1.93
2.18
Q
2.97
3.22
R
11.70
12.80
S
4.30 Typical
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Marking: Type Number
Weight: 5.6 grams (approx.)
Mounting Position: Any
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
MBR
4030PT
MBR
4035PT
MBR
4040PT
MBR
4045PT
MBR
4O50PT
MBR
4060PT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
30
35
40
45
50
60
V
RMS Reverse Voltage
V
R(RMS)
21
24.5
28
31.5
35
42
V
Average Rectified Output Current
@ T
C
= 125
C
(Note 1)
I
O
40
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
400
A
Forward Voltage Drop
@ I
F
= 20A, T
C
= 25
C
@ I
F
= 20A, T
C
= 125
C
V
FM
0.70
0.60
0.80
0.70
V
Peak Reverse Current
@ T
C
= 25
C
at Rated DC Blocking Voltage
@ T
C
= 125
C
I
RM
1.0
100
mA
Typical Junction Capacitance
(Note 2)
C
j
1100
pF
Typical Thermal Resistance Junction to Case
(Note 1)
R
qJc
1.4
K/W
Voltage Rate of Change (Rated V
R
)
dV/dt
10,000
V/
ms
Operating and Storage Temperature Range
T
j,
T
STG
-65 to +150
C
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
D
S23019 Rev. E-2 2 of 2 MBR4030PT - MBR4060PT
I
,
INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics (per element)
F
MBR 4030PT - MBR4045PT
MBR4050PT - MBR4060PT
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.1
1.0
10
100
1
10
100
I
,
PEAK
FWD
SURGE
CURRENT
(A)
FSM
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
100
200
300
400
8.3 ms Single half
sine-wave (JEDEC method)
100
1000
4000
1
10
C
,
CAP
ACIT
ANCE
(pF)
j
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
T = 25C
f = 1 Mhz
J
100
0.1
0.001
0.01
0.1
1.0
0
20 40 60 80 100 120 140
I
,
INST
ANT
ANEOUS
REVERSE
CURRENT
(A)
R
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
T = 125C
C
T = 75C
C
T = 25C
C
10
T = 25C
j
0
50
100
150
I
,
A
VERAGE
FWD
CURRENT
(A)
(A
V)
T , CASE TEMPERATURE (C)
Fig. 1 Fwd Current Derating Curve
C
0
30
10
20
40
50
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