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Электронный компонент: MBR6045PT

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D
S30053 Rev. B-2 1 of 2 MBR6030PT - MBR6045PT
MBR6030PT - MBR6045PT
60A SCHOTTKY BARRIER RECTIFIER
Features
A
B
E
G
J
L
M
N
K
S
M
H
R
D
C
P*
*2 Places
Q
TO-3P
Dim
Min
Max
A
3.20
3.50
B
4.59
5.16
C
20.80
21.30
D
19.70
20.20
E
2.10
2.40
G
0.51
0.76
H
15.90
16.40
J
1.70
2.70
K
3.10
3.30
L
3.50
4.51
M
5.20
5.70
N
1.12
1.22
P
1.93
2.18
Q
2.97
3.22
R
11.70
12.80
S
4.30 Typical
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Weight: 5.6 grams (approx.)
Mounting Position: Any
Marking: Type Number
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
MBR
6030PT
MBR
6035PT
MBR
6040PT
MBR
6045PT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
30
35
40
45
V
RMS Reverse Voltage
V
R(RMS)
21
25
28
32
V
Average Rectified Output Current
@ T
C
= 125
C
(Note 1)
I
O
60
A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
500
A
Forward Voltage Drop
@ I
F
= 30A, T
C
= 25
C
@ I
F
= 30A, T
C
= 125
C
@ I
F
= 60A, T
C
= 25
C
V
FM
0.62
0.55
0.75
V
Peak Reverse Current
@ T
C
= 25
C
at Rated DC Blocking Voltage
@ T
C
= 100
C
I
RM
1.0
50
mA
Typical Junction Capacitance (Note 2)
C
j
650
pF
Typical Thermal Resistance Junction to Case (Note 1)
R
qJc
1.0
K/W
Operating and Storage Temperature Range
T
j,
T
STG
-55 to +150
C
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
D
S30053 Rev. B-2 2 of 2 MBR6030PT - MBR6045PT
0.1
1.0
10
100
0.2
0
0.4
0.6
0.8
1.0
I
,
INST
ANT
ANE
O
US
FWD
CURRENT
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
T = 25 C
Pulse width = 300 s
2% duty cycle
j
100
200
300
0
400
500
600
1
10
100
I
,
PEAK
FWD
S
UR
G
E
C
URRENT
(
A
)
FSM
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
8.3ms single half-sine-wave
JEDEC method
100
1000
10000
0.1
1.0
10
100
C
,
JUNCTI
O
N
CAP
ACIT
ANCE
(pF)
j
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance per Element
R
T = 25 C
j
0.01
0.1
1.0
10
100
0
20
40
60
I
,
INST
ANT
ANE
O
US
REVERSE
CURRENT
(mA)
R
PEAK REVERSE VOLTAGE (V)
Fig. 5 Typical Reverse Characteristics
T = 100 C
j
T = 25 C
j
30
50
10
0
10
20
40
0
50
100
150
I
,
A
VERAGE
RECTIFIED
CURRENT
(A)
O
T , CASE TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
C
30
50
60
70
80