DS23007 Rev. 7 - 2
1 of 2
MBR730-MBR760
MBR730 - MBR760
7.5A SCHOTTKY BARRIER RECTIFIER
Features
L
M
A
N
P
D
E
K
C
B
J
G
R
Pin 1 +
Pin 1
Pin 2
Pin 2 -
Case
+
TO-220AC
Dim
Min
Max
A
14.22
15.88
B
9.65
10.67
C
2.54
3.43
D
5.84
6.86
E
6.35
G
12.70
14.73
J
0.51
1.14
K
3.53
4.09
L
3.56
4.83
M
1.14
1.40
N
0.30
0.64
P
2.03
2.92
R
4.83
5.33
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 2.3 grams (approx.)
Mounting Position: Any
Marking: Type Number
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
MBR
730
MBR
735
MBR
740
MBR
745
MBR
750
MBR
760
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
30
35
40
45
50
60
V
RMS Reverse Voltage
V
R(RMS)
21
24.5
28
31.5
35
42
V
Average Rectified Output Current
(Note 1)
@ T
C
= 125
C
I
O
7.5
A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
150
A
Forward Voltage Drop
@ I
F
= 7.5A, T
C
= 25
C
@I
F
= 7.5A, T
C
= 125
C
V
FM
0.55
0.70
0.70
0.75
V
Peak Reverse Current
@T
C
= 25
C
at Rated DC Blocking Voltage
@ T
C
= 125
C
I
RM
1.0
15
1.0
50
mA
Typical Junction Capacitance (Note 2)
C
j
400
pF
Typical Thermal Resistance Junction to Case (Note 1)
R
qJc
3.5
C/W
Voltage Rate of Change (Rated V
R
)
dV/dt
10,000
V/
ms
Operating and Storage Temperature Range
T
j,
T
STG
-65 to +150
C
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
DS23007 Rev. 7 - 2
2 of 2
MBR730-MBR760
0.1
1.0
10
50
0.2
0.4
0.6
0.8
1.0
I
,
INST
ANT
ANEOUS
FWD
CURRENT
(A)
F
V , INSTANTANEOUS FWD VOLTAGE (V)
Fig. 2 Typ Instantaneous Fwd Characteristics
F
MBR730 - MBR745
MBR750 - MBR760
T = 25 C
2% duty cycle
J
Pulse width = 300 s
1
10
100
I
,
PEAK
FWD
SURGE
CURRENT
(A)
FSM
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
8.3 ms Single half
sine-wave (JEDEC method)
25
50
75
100
125
150
175
100
1000
4000
1.0
10
C
,
CAP
ACIT
ANCE
(pF)
j
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
100
0.1
0.001
0.01
0.1
1.0
0
20
40
60
80
100
120
140
I
,
INST
ANT
ANEOUS
REVERSE
CURRENT
(mA)
R
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
T = 125 C
j
T = 75 C
j
T = 25 C
j
10
Resistive or
Inductive load
0
50
100
150
I
,
A
VERAGE
FWD
CURRENT
(A)
(A
V)
T , CASE TEMPERATURE ( C)
Fig. 1 Fwd Current Derating Curve
C
0
2
4
6
8
10
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