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Электронный компонент: MBRD1040

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Note:
Pins 1 & 3 must be electrically
connected at the printed circuit board.
DS30282 Rev. 3 - 2
1 of 3
MBRD1040
MBRD1040
10A LOW VF SCHOTTKY BARRIER RECTIFIER
Features
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Case: DPAK Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking Information: See Page 2
Weight: 0.4 grams (approx.)
Mechanical Data
B
C
D
E
G
H
J
K
L
M
A
P
1
2
3
4
PIN 1
PIN 3
PIN 4, BOTTOMSIDE
HEAT SINK
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
40
V
RMS Reverse Voltage
V
R(RMS)
28
V
Average Rectified Output Current
(Also see Figure 4)
I
O
10
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
I
FSM
100
A
Typical Thermal Resistance Junction to Case
R
qJC
6.0
C/W
Typical Thermal Resistance Junction to Ambient
R
qJA
80
C/W
Operating Temperature Range
T
j
-65 to +150
C
Storage Temperature Range
T
STG
-65 to +150
C
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Maximum Junction Temperature Rating
Very Low Forward Voltage Drop
Very Low Leakage Current
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
NEW
PRODUCT
Maximum Ratings
@ T
A
= 25
C unless otherwise specified
Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 1)
V
(BR)R
40
V
I
R
= 1mA
Forward Voltage (Note 1)
V
FM
0.45
0.47
0.49
0.41
0.51
V
I
F
= 8A, T
S
= 25
C
I
F
= 8A, T
S
= 125
C
I
F
= 10A, T
S
= 25
C
Peak Reverse Current (Note 1)
I
RM
0.1
12.5
0.3
25
mA
T
S
= 25
C, V
R
= 35V
T
S
= 100
C, V
R
= 35V
Junction Capacitance
C
j
700
pF
f = 1.0MHz, V
R
= 4.0V DC
Notes:
1. Short duration test pulse used to minimize self-heating effect.
DPAK
Dim
Min
Max
A
6.3
6.7
B
10
C
0.3
0.8
D
2.3 Nominal
E
2.1
2.5
G
0.4
0.6
H
1.2
1.6
J
5.3
5.7
K
0.5 Nominal
L
1.3
1.8
M
1.0
P
5.1
5.5
All Dimensions in mm
MBRD1040 = Product type marking code
= Manufacturers' code marking
YWW = Date code marking
Y = Last digit of year ex: 2 for 2002
WW = Week code 01 to 52
YWW
MBRD1040
DS30282 Rev. 3 - 2
2 of 3
MBRD1040
0
100
200
300
400
600
500
I
,
INST
ANT
ANE
O
US
F
O
R
W
ARD
CURRENT
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 1 Typical Forward Characteristics
F
10
1
0.1
0.01
0.001
0.0001
100
T = +25 C
A
T = +75 C
A
T = +150 C
A
0
5
10
15
20
25
30
40
35
I
,
INST
ANT
ANE
O
US
REVERSE
CURRENT
(
A)
R
m
V , INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics
R
T = +25C
A
T = +150C
A
T = +100C
A
T = +75C
A
100
10
1
0.1
0.01
1000
100
1000
10,000
0
15
10
25
30
35
20
40
C
,
JUNCTI
O
N
CAP
ACIT
ANCE
(pF)
j
V , REVERSE VOLTAGE (V)
Fig. 3 Typical Junction Capacitance vs. Reverse Voltage
R
5
f = 1MHz
NEW
PRODUCT
0
2
4
6
8
10
12
-25
0
25
50
75
100
125
150
I
,
A
VERAGE
F
O
R
W
ARD
CURRENT
(A)
F(A
V)
T , AMBIENT TEMPERATURE (C)
Fig. 4 DC Forward Current Derating
A
Note 3
Note 4
Note 5
Marking Information
Notes:
2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Ordering Information
Device
Packaging
Shipping
MBRD1040-T
DPAK
2500/Tape & Reel
(Note 2)
DS30282 Rev. 3 - 2
3 of 3
MBRD1040
0
1
2
3
5
4
6
7
8
0
1.5
4.5
3
6
7.5
9 10.5 12 13.5 15
P
,
A
VERAGE
FOR
W
ARD
POWER
DISSIP
A
TION
(W
)
F(A
V)
I
, AVERAGE FORWARD CURRENT (A)
Fig. 5 Forward Power Dissipation (Per Element)
F(AV)
T = 150C
j
Note 7
Note 6
DC
NEW
PRODUCT
Notes: 3. T
A
= T
SOLDERING POINT
, R
qJC
= 6.0
C/W, R
qCA
= 0
C/W.
4. Device mounted on GETEK substrate, 2"x2", 2 oz. copper, double-sided, cathode pad dimensions 0.75" x 1.0", anode pad
dimensions 0.25" x 1.0". R
qJA
in range of 15-30C/W.
5. Device mounted on FR-4 substrate, 2"x2", 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. R
qJA
in range of
60-75C/W.
6. Maximum power disspiation when the device is mounted in accordance to the conditions described in Note 5.
7. Maximum power disspation when the device is mounted in accordance to the conditions described in Note 4.