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Электронный компонент: MBRM3100

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Note:
Pins 1 & 2 must be electrically
connected at the printed circuit board.
DS30354 Rev. 3 - 1
1 of 3
MBRM3100
www.diodes.com
MBRM3100
3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
POWERMITE3
Features
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Case: POWERMITE
3, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Moisture sensitivity: Level 1 per J-STD-020A
Polarity: See Diagram
Marking: See Sheet 3
Weight: 0.072 grams (approx.)
Mechanical Data
B
C
D
E
G
J
H
K
L
M
A
P
1
2
3
PIN 1
PIN 2
PIN 3, BOTTOMSIDE
HEAT SINK
C
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100
V
RMS Reverse Voltage
V
R(RMS)
70
V
Average Rectified Output Current
(See also Figure 5)
I
O
3
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method) @ T
C
= 90C
I
FSM
50
A
Typical Thermal Resistance Junction to Soldering Point
R
qJS
3.5
C/W
Typical Thermal Resistance Junction to Case
R
qJC
1.6
C/W
Operating Temperature Range
T
j
-55 to +125
C
Storage Temperature Range
T
STG
-55 to +150
C
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Reverse Breakdown Voltage
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
T
C
U
D
O
R
P
W
E
N
Maximum Ratings
@ T
A
= 25
C unless otherwise specified
Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 1)
V
(BR)R
100
V
I
R
= 0.2mA
Forward Voltage (Note 1)
V
F
0.72
0.60
0.79
0.68
0.76
V
I
F
= 3A, T
j
= 25
C
I
F
= 3A, T
j
= 100
C
I
F
= 6A, T
j
= 25
C
I
F
= 6A, T
j
= 100
C
Reverse Current (Note 1)
I
R
2
0.5
100
20
mA
mA
T
j
= 25
C, V
R
= 100V
T
j
= 100
C, V
R
= 100V
Total Capacitance
C
T
85
pF
f = 1.0MHz, V
R
= 4.0V DC
POWERMITE
3
Dim
Min
Max
A
4.03
4.09
B
6.40
6.61
C
.889 NOM
D
1.83 NOM
E
1.10
1.14
G
.178 NOM
H
5.01
5.17
J
4.37
4.43
K
.178 NOM
L
.71
.77
M
.36
.46
P
1.73
1.83
All Dimensions in mm
Notes:
1. Short duration test pulse used to minimize self-heating effect.
UNDER DEVELOPMENT
DS30354 Rev. 3 - 1
2 of 3
MBRM3100
www.diodes.com
T
C
U
D
O
R
P
W
E
N
1
10
100
1000
10,000
0
20
40
60
80
100
I
,
INST
ANT
A
NEOUS
R
EVERSE
CURRENT
(
m
A)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Fig. 2 Typical Reverse Characteristics
T = 125C
j
T = 100C
j
T = 75C
j
T = 25C
j
0
10
20
30
40
50
1
10
100
I
,
PEAK
FOR
W
ARD
S
URGE
CURRENT
(A)
FSM
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
Single Half-Sine-Wave
(JEDEC Method)
T = 90C
C
0.01
0.1
1.0
10
0
0.2
0.4
0.6
0.8
1.0
I
,
INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig. 1 Typical Forward Characteristics
T = 25C
j
T = 100C
j
10
100
1000
0
20
40
60
80
100
C
,
T
O
T
A
L
C
AP
ACIT
ANCE
(pF)
T
V , REVERSE VOLTAGE (V)
R
Fig. 4 Typical Capacitance vs.
Reverse Voltage
f = 1MHz
UNDER DEVELOPMENT
DS30354 Rev. 3 - 1
3 of 3
MBRM3100
www.diodes.com
(Note 4)
Device
Packaging
Shipping
MBRM3100-13
POWERMITE
3
5000/Tape & Reel
Marking Information
MBRM3100 = Product type marking code
= Manufacturers' code marking
YYWW = Date code marking
YY = Last digit of year ex: 02 for 2002
WW = Week code 01 to 52
(K) = Factory Designator
YYWW(K)
MBRM3100
Ordering Information
Notes:
1. T
A
= T
SOLDERING POINT
, R
qJS
= 3.5
C/W, R
qSA
= 0
C/W.
2. Device mounted on GETEK substrate, 2"x2", 2 oz. copper, double-sided, cathode pad dimensions 0.75" x 1.0", anode pad
dimensions 0.25" x 1.0". R
qJA
in range of 25-45C/W.
3. Device mounted on FR-4 substrate, 2"x2", 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. R
qJA
in range of
105-130C/W.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
POWERMITE is a registered trademark of Microsemi Corporation.
UNDER DEVELOPMENT
T
C
U
D
O
R
P
W
E
N
0
0.5
1
1.5
2.5
2
3
3.5
4
25
50
75
100
125
150
I
,
DC
FOR
W
A
RD
CURRENT
(A)
F
T , AMBIENT TEMPERATURE (C)
A
Fig. 5 DC Forward Current Derating
Note 1
Note 3
Note 2
0
1
2
3
4
0
1
2
3
4
5
6
7
P
,
A
V
ERAGE
FOR
W
ARD
P
OWER
DISSIP
A
TION
(W
)
F(A
V
)
I
, AVERAGE FORWARD CURRENT (A)
F(AV)
Fig. 6 Forward Power Dissipation
T = 125C
j
NOTE 2
NOTE 3