ChipFind - документация

Электронный компонент: MMBD4448H

Скачать:  PDF   ZIP
DS30176 Rev. B-1
1 of 2
MMBD4448H
MMBD4448H
SURFACE MOUNT SWITCHING DIODE
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: KA3
Weight: 0.008 grams (approx.)
Mechanical Data
A
E
J
L
TOP VIEW
M
B C
H
G
D
K
Features
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.19
1.40
C
2.10
2.50
D
0.89
1.05
E
0.45
0.61
G
1.78
2.05
H
2.65
3.05
J
0.013
0.15
K
0.89
1.10
L
0.45
0.61
M
0.076
0.178
All Dimensions in mm
Characteristic
Symbol
MMBD4448H
Unit
Non-Repetitive Peak Reverse Voltage
V
RM
100
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
80
V
RMS Reverse Voltage
V
R(RMS)
57
V
Forward Continuous Current (Note 1)
I
FM
500
mA
Average Rectified Output Current (Note 1)
I
O
250
mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0
ms
@ t = 1.0s
I
FSM
4.0
2.0
A
Power Dissipation (Note 1)
P
d
350
mW
Thermal Resistance Junction to Ambient Air (Note 1)
R
qJA
357
K/W
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
C
Maximum Ratings
@ T
A
= 25
C unless otherwise specified
Notes:
1. Valid provided that terminals are kept at ambient temperature.
2. tp <300
ms, duty cycle <2%.
Characteristic
Symbol
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 2)
V
(BR)R
80
V
I
R
= 2.5
mA
Forward Voltage (Note 2)
V
FM
0.62
0.72
0.855
1.0
1.25
V
I
F
= 5.0mA
I
F
= 10mA
I
F
= 100mA
I
F
= 150mA
Peak Reverse Current (Note 2)
I
RM
100
50
30
25
nA
mA
mA
nA
V
R
= 70V
V
R
= 75V, T
j
= 150
C
V
R
= 25V, T
j
= 150
C
V
R
= 20V
Junction Capacitance
C
j
3.5
pF
V
R
= 6V, f = 1.0MHz
Reverse Recovery Time
t
rr
4.0
ns
V
R
= 6V, I
F
= 5mA
Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Fast Switching Speed
Surface Mount Package Ideally Suited for
Automatic Insertion
For General Purpose Switching Applications
High Conductance
NEW
PRODUCT
DS30176 Rev. B-1
2 of 2
MMBD4448H
1
10
100
1000
10,000
0
100
200
I
,
LEAKAGE
CURRENT
(nA)
R
T , JUNCTION TEMPERATURE (C)
Fig. 2 Leakage Current vs Junction Temperature
j
V = 20V
R
10
1.0
100
1000
0.1
0.01
0
1
2
I
,
INST
ANT
ANE
O
US
F
O
R
W
ARD
CURRENT
(mA)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Forward Characteristics
F
NEW
PRODUCT