DS30059 Rev. 7 - 2
1 of 3
MMBT3906
www.diodes.com
MMBT3906
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Epitaxial Planar Die Construction
Complementary NPN Type Available
(MMBT3904)
Ideal for Medium Power Amplification and
Switching
Characteristic
Symbol
MMBT3906
Unit
Collector-Base Voltage
V
CBO
-40
V
Collector-Emitter Voltage
V
CEO
-40
V
Emitter-Base Voltage
V
EBO
-5.0
V
Collector Current - Continuous (Note 1)
I
C
-200
mA
Power Dissipation (Note 1)
P
d
300
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
qJA
417
C/W
Operating and Storage and Temperature Range
T
j
, T
STG
-55 to +150
C
Features
Maximum Ratings
@ T
A
= 25
C unless otherwise specified
Mechanical Data
Case: SOT-23, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking (See Page 2): K3N
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approx.)
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
A
E
J
L
TOP VIEW
M
B
C
H
G
D
K
C
B
E
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
a
0
8
All Dimensions in mm
E
B
C
DS30059 Rev. 7 - 2
2 of 3
MMBT3906
www.diodes.com
Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V
(BR)CBO
-40
V
I
C
= -10
mA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-40
V
I
C
= -1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5.0
V
I
E
= -10
mA, I
C
= 0
Collector Cutoff Current
I
CEX
-50
nA
V
CE
= -30V, V
EB(OFF)
= -3.0V
I
CBO
-50
nA
V
CB
= -30V, I
E
= 0
Base Cutoff Current
I
BL
-50
nA
V
CE
= -30V, V
EB(OFF)
= -3.0V
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
60
80
100
60
30
300
I
C
= -100A, V
CE
= -1.0V
I
C
= -1.0mA, V
CE
= -1.0V
I
C
= -10mA, V
CE
= -1.0V
I
C
= -50mA, V
CE
= -1.0V
I
C
= -100mA, V
CE
= -1.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
-0.25
-0.40
V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
Base- Emitter Saturation Voltage
V
BE(SAT)
-0.65
-0.85
-0.95
V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
4.5
pF
V
CB
= -5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
10
pF
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
Input Impedance
h
ie
2.0
12
k
W
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio
h
re
0.1
10
x 10
-4
Small Signal Current Gain
h
fe
100
400
Output Admittance
h
oe
3.0
60
mS
Current Gain-Bandwidth Product
f
T
250
MHz
V
CE
= -20V, I
C
= -10mA,
f = 100MHz
Noise Figure
NF
4.0
dB
V
CE
= -5.0V, I
C
= -100
mA,
R
S
= 1.0k
W, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
35
ns
V
CC
= -3.0V, I
C
= -10mA,
V
BE(off)
= 0.5V, I
B1
= -1.0mA
Rise Time
t
r
35
ns
Storage Time
t
s
225
ns
V
CC
= -3.0V, I
C
= -10mA,
I
B1
= I
B2
= -1.0mA
Fall Time
t
f
75
ns
Notes:
2. Short duration test pulse used to minimize self-heating effect.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
K3N
YM
K3N = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Marking Information
Ordering Information
Device
Packaging
Shipping
MMBT3906 -7
SOT-23
3000/Tape & Reel
Date Code Key
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
(Note 3)
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
DS30059 Rev. 7 - 2
3 of 3
MMBT3906
www.diodes.com
0
50
100
25
50
75
100
125
150
175
200
P
,
POWER
D
ISSIP
A
TION
(mW)
D
T , AMBIENT TEMPERATURE (C)
A
Fig. 1, Max Power Dissipation vs
Ambient Temperature
150
200
250
300
350
0
1
100
10
0.1
1
10
100
C
,
INPUT
CAP
ACIT
A
NCE
(pF)
IBO
C
,
OUTPUT
CAP
ACIT
ANCE
(pF)
OBO
V
, COLLECTOR-BASE VOLTAGE (V)
CB
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
f = 1MHz
Cibo
Cobo
1
10
1000
100
0.1
1
10
1000
100
h
,
DC
CURRENT
GAIN
FE
I , COLLECTOR CURRENT (mA)
C
Fig. 3, Typical DC Current Gain vs
Collector Current
T = -25C
A
T = +25C
A
T = 125C
A
V
= 1.0V
CE
0.01
0.1
10
1
1
10
100
1000
V
,
COLLECT
OR-EMITTER
(V)
CE(SA
T)
SA
TURA
TION
VOL
T
AGE
I , COLLECTOR CURRENT (mA)
C
Fig. 4, Typical Collector-Emitter Saturation Voltage
vs. Collector Current
I
C
I
B
= 10
0.5
0.6
0.7
0.8
0.9
1.0
1
10
100
V
,
BASE-EMITTER
(V)
BE(SA
T
)
SA
TURA
TION
VOL
T
AGE
I , COLLECTOR CURRENT (mA)
C
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
I
C
I
B
= 10
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