DS30039 Rev. 4 - 2
1 of 3
MMBT4401
MMBT4401
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Epitaxial Planar Die Construction
Complementary PNP Type Available
(MMBT4403)
Ideal for Medium Power Amplification and
Switching
Characteristic
Symbol
MMBT4401
Unit
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
6.0
V
Collector Current - Continuous (Note 1)
I
C
600
mA
Power Dissipation (Note 1)
P
d
300
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
qJA
417
C/W
Operating and Storage and Temperature Range
T
j
, T
STG
-55 to +150
C
Features
Maximum Ratings
@ T
A
= 25
C unless otherwise specified
A
B
E
E
J
L
TOP VIEW
M
B C
C
H
G
D
K
Mechanical Data
Case: SOT-23, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking (See Page 2): K2X
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approx.)
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
a
0
8
All Dimensions in mm
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
E
B
C
DS30039 Rev. 4 - 2
2 of 3
MMBT4401
Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V
(BR)CBO
60
V
I
C
= 100
mA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
40
V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
6.0
V
I
E
= 100
mA, I
C
= 0
Collector Cutoff Current
I
CEX
100
nA
V
CE
= 35V, V
EB(OFF)
= 0.4V
Base Cutoff Current
I
BL
100
nA
V
CE
= 35V, V
EB(OFF)
= 0.4V
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
20
40
80
100
40
300
I
C
= 100A, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 150mA, V
CE
= 1.0V
I
C
= 500mA, V
CE
= 2.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
0.40
0.75
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
Base-Emitter Saturation Voltage
V
BE(SAT)
0.75
0.95
1.2
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
cb
6.5
pF
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
eb
30
pF
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Input Impedance
h
ie
1.0
15
k
W
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio
h
re
0.1
8.0
x 10
-4
Small Signal Current Gain
h
fe
40
500
Output Admittance
h
oe
1.0
30
mS
Current Gain-Bandwidth Product
f
T
250
MHz
V
CE
= 10V, I
C
= 20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
15
ns
V
CC
= 30V, I
C
= 150mA,
V
BE(off)
= 2.0V, I
B1
= 15mA
Rise Time
t
r
20
ns
Storage Time
t
s
225
ns
V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B2
= 15mA
Fall Time
t
f
30
ns
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Date Code Key
K2X = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K2X
YM
Marking Information
Device
Packaging
Shipping
MMBT4401-7
SOT-23
3000/Tape & Reel
(Note 3)
Ordering Information
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Notes:
2. Short duration test pulse used to minimize self-heating effect.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
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