DS30037 Rev. C-2
1 of 2
MMBTA05 / MMBTA06
MMBTA05 / MMBTA06
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Epitaxial Planar Die Construction
Complementary PNP Types Available
(MMBTA55 / MMBTA56)
Ideal for Medium Power Amplification and
Switching
Characteristic
Symbol
MMBTA05
MMBTA06
Unit
Collector-Base Voltage
V
CBO
60
80
V
Collector-Emitter Voltage
V
CEO
60
80
V
Emitter-Base Voltage
V
EBO
4.0
V
Collector Current - Continuous (Note 1)
I
C
500
mA
Power Dissipation (Note 1)
P
d
350
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
qJA
357
K/W
Operating and Storage and Temperature Range
T
j
, T
STG
-55 to +150
C
Features
Maximum Ratings
@ T
A
= 25
C unless otherwise specified
A
E
J
L
M
B
C
H
G
D
K
TOP VIEW
C
E
B
Mechanical Data
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
MMBTA05 Marking: K1G, K1H, R1H
MMBTA06 Marking: K1G, R1G
Weight: 0.008 grams (approx.)
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.19
1.40
C
2.10
2.50
D
0.89
1.05
E
0.45
0.61
G
1.78
2.05
H
2.65
3.05
J
0.013
0.15
K
0.89
1.10
L
0.45
0.61
M
0.076
0.178
All Dimensions in mm
Note:
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width
300ms, duty cycle 2%.
Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
MMBTA05
MMBTA06
V
(BR)CBO
60
80
V
I
C
= 100
mA, I
E
= 0
Collector-Emitter Breakdown Voltage
MMBTA05
MMBTA06
V
(BR)CEO
60
80
V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
4.0
V
I
E
= 100
mA, I
C
= 0
Collector Cutoff Current
MMBTA05
MMBTA06
I
CBO
100
nA
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
Collector Cutoff Current
MMBTA05
MMBTA06
I
CES
100
nA
V
CE
= 60V, I
BO
= 0V
V
CE
= 80V, I
BO
= 0V
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
100
I
C
= 10mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
0.25
V
I
C
= 100mA, I
B
= 10mA
Base- Emitter Saturation Voltage
V
BE(SAT)
1.2
V
I
C
= 100mA, V
CE
= 1.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
100
MHz
V
CE
= 2.0V, I
C
= 10mA,
f = 100MHz
DS30037 Rev. C-2
2 of 2
MMBTA05 / MMBTA06
0
50
100
25
50
75
100
125
150
175
200
P
,
POWER
DISSIP
A
TION
(mW)
D
T , AMBIENT TEMPERATURE (C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
A
150
200
250
300
350
0
1
10
1000
100
1
10
100
1000
h
,
PULSED
CURRENT
GAIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 2, Typical Pulsed Current Gain
vs. Collector Current
C
V
= 1V
CE
T = -40C
A
T = +125C
A
T = +25C
A
I
,
COLLECT
OR-BASE
CURRENT
(nA)
CBO
T , AMBIENT TEMPERATURE (
)
A
C
Fig. 4 Typical Collector-Cutoff Current
vs. Ambient Temperature
10
0.01
0.1
1
25
50
75
100
125
V
= 80V
CB
0.001
0.01
I
BASE CURRENT (mA)
Fig. 3 Typical Collector Saturation Region
B,
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1
1
10
100
V
,
COLLECT
OR
EMITTER
VOL
T
AGE
(V)
CE
I = 1mA
C
I = 10mA
C
I = 30mA
C
I = 100mA
C
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