DS30122 Rev. B-2
1 of 4
MMDT2227
MMDT2227
COMPLEMENTARY NPN / PNP SMALL
SIGNAL SURFACE MOUNT TRANSISTOR
Complementary Pair
Epitaxial Planar Die Construction
Ultra-Small Surface Mount Package
One 2222A-Type NPN,
One 2907A-Type PNP
Ideal for Low Power Amplification and
Switching
Characteristic
Symbol
NPN2222A
Unit
Collector-Base Voltage
V
CBO
75
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
6.0
V
Collector Current - Continuous (Note 1)
I
C
600
mA
Power Dissipation (Note 1)
P
d
200
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
qJA
625
K/W
Operating and Storage and Temperature Range
T
j
, T
STG
-55 to +150
C
Features
Maximum Ratings, NPN2222A Section
@ T
A
= 25
C unless otherwise specified
A
M
J
L
F
D
B C
H
K
KXX
C
2
B
1
E
1
E
2
B
2
C
1
Mechanical Data
Case: SOT-363, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: K27
Weight: 0.006 grams (approx.)
Note:
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width
300ms, duty cycle 2%.
SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
All Dimensions in mm
Characteristic
Symbol
PNP2907A
Unit
Collector-Base Voltage
V
CBO
-60
V
Collector-Emitter Voltage
V
CEO
-60
V
Emitter-Base Voltage
V
EBO
-5.0
V
Collector Current - Continuous (Note 1)
I
C
-600
mA
Power Dissipation (Note 1)
P
d
200
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
qJA
625
K/W
Operating and Storage and Temperature Range
T
j
, T
STG
-55 to +150
C
Maximum Ratings, PNP2907A Section
@ T
A
= 25
C unless otherwise specified
Note: E1, B1, and C1 = PNP2907A Section,
E2, B2, and C2 = NPN2222A Section.
Type marking indicates orientation.
DS30122 Rev. B-2
2 of 4
MMDT2227
Electrical Characteristics, NPN2222A Section
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V
(BR)CBO
75
V
I
C
= 10
mA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
40
V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
6.0
V
I
E
= 10
mA, I
C
= 0
Collector Cutoff Current
I
CBO
10
nA
mA
V
CB
= 60V, I
E
= 0
V
CB
= 60V, I
E
= 0, T
A
= 150
C
Collector Cutoff Current
I
CEX
10
nA
V
CE
= 60V, V
EB(OFF)
= 3.0V
Emitter Cutoff Current
I
EBO
10
nA
V
EB
= 3.0V, I
C
= 0
Base Cutoff Current
I
BL
20
nA
V
CE
= 60V, V
EB(OFF)
= 3.0V
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
35
50
75
100
40
50
35
300
I
C
= 100
mA, V
CE
= 10V
I
C
= 1.0mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
I
C
= 150mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V, T
A
= -55
C
I
C
= 150mA, V
CE
= 1.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
0.3
1.0
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
Base- Emitter Saturation Voltage
V
BE(SAT)
0.6
1.2
2.0
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
8
pF
V
CB
= 10V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
--
25
pF
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Current Gain-Bandwidth Product
f
T
300
MHz
V
CE
= 20V, I
C
= 20mA,
f = 100MHz
Noise Figure
NF
4.0
dB
V
CE
= 10V, I
C
= 100
mA,
R
S
= 1.0k
W, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
10
ns
V
CC
= 30V, I
C
= 150mA,
V
BE(off)
= - 0.5V, I
B1
= 15mA
Rise Time
t
r
25
ns
Note:
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width
300ms, duty cycle 2%.
DS30122 Rev. B-2
3 of 4
MMDT2227
Electrical Characteristics, PNP2907A Section
@ T
A
= 25
C unless otherwise specified
Note:
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width
300ms, duty cycle 2%.
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V
(BR)CBO
-60
V
I
C
= -10
mA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-60
V
I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5.0
V
I
E
= -10
mA, I
C
= 0
Collector Cutoff Current
I
CBO
-10
nA
mA
V
CB
= -50V, I
E
= 0
V
CB
= -50V, I
E
= 0, T
A
= 125
C
Collector Cutoff Current
I
CEX
-50
nA
V
CE
= -30V, V
EB(OFF)
= -0.5V
Base Cutoff Current
I
BL
-50
nA
V
CE
= -30V, V
EB(OFF)
= -0.5V
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
75
100
100
100
50
300
I
C
= -100A, V
CE
= -10V
I
C
= -1.0mA, V
CE
= -10V
I
C
= -10mA, V
CE
= -10V
I
C
= -150mA, V
CE
= -10V
I
C
= -500mA, V
CE
= -10V
Collector-Emitter Saturation Voltage
V
CE(SAT)
-0.4
-1.6
V
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
Base- Emitter Saturation Voltage
V
BE(SAT)
-1.3
-2.6
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
8.0
pF
V
CB
= -10V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
--
30
pF
V
EB
= -2.0V, f = 1.0MHz, I
C
= 0
Current Gain-Bandwidth Product
f
T
200
MHz
V
CE
= -20V, I
C
= -50mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Turn-On Time
t
on
45
ns
I
C
= -150mA, V
CC =
-30V,
I
B1
= -15mA
Delay Time
t
d
10
ns
V
CC
= -30V, I
C
= -150mA,
I
B1
= -15mA
Rise Time
t
r
40
ns
PDF 
ZIP