DS30083 Rev. 2P-1
1 of 3
MMST4403
MMST4403
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Epitaxial Planar Die Construction
Complementary NPN Type Available
(MMST4401)
Ultra-Small Surface Mount Package
Characteristic
Symbol
MMST4403
Unit
Collector-Base Voltage
V
CBO
-40
V
Collector-Emitter Voltage
V
CEO
-40
V
Emitter-Base Voltage
V
EBO
-5.0
V
Collector Current - Continuous (Note 1)
I
C
-600
mA
Power Dissipation (Note 1)
P
d
200
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
qJA
625
K/W
Operating and Storage and Temperature Range
T
j
, T
STG
-55 to +150
C
Features
Maximum Ratings
@ T
A
= 25
C unless otherwise specified
A
E
J
L
M
B C
H
G
D
K
TOP VIEW
C
E
B
Mechanical Data
Case: SOT-323, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: K3T
Weight: 0.006 grams (approx.)
Note:
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width
300ms, duty cycle 2%.
SOT-323
Dim
Min
Max
A
0.30
0.40
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
E
0.30
0.40
G
1.20
1.40
H
1.80
2.20
J
0.0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
All Dimensions in mm
NEW
PRODUCT
DS30083 Rev. 2P-1
2 of 3
MMST4403
NEW
PRODUCT
Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V
(BR)CBO
-40
V
I
C
= -100
mA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-40
V
I
C
= -1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5.0
V
I
E
= -100
mA, I
C
= 0
Collector Cutoff Current
I
CEX
-100
nA
V
CE
= -35V, V
EB(OFF)
= -0.4V
Base Cutoff Current
I
BL
-100
nA
V
CE
= -35V, V
EB(OFF)
= -0.4V
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
30
60
100
100
20
300
I
C
= -100A, V
CE
= -1.0V
I
C
= -1.0mA, V
CE
= -1.0V
I
C
= -10mA, V
CE
= -1.0V
I
C
= -150mA, V
CE
= -2.0V
I
C
= -500mA, V
CE
= -2.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
-0.40
-0.75
V
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
Base- Emitter Saturation Voltage
V
BE(SAT)
-0.75
-0.95
-1.30
V
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
cb
8.5
pF
V
CB
= -10V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
eb
30
pF
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
Input Impedance
h
ie
1.5
15
k
W
V
CE
= -10V, I
C
= -1.0mA,
f = 1.0kHz
Voltage Feedback Ratio
h
re
0.1
8.0
x 10
-4
Small Signal Current Gain
h
fe
60
500
Output Admittance
h
oe
1.0
100
mS
Current Gain-Bandwidth Product
f
T
200
MHz
V
CE
= -10V, I
C
= -20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
15
ns
V
CC
= -30V, I
C
= -150mA,
V
BE(off)
= -2.0V, I
B1
= -15mA
Rise Time
t
r
20
ns
Storage Time
t
s
225
ns
V
CC
= -30V, I
C
= -150mA,
I
B1
= I
B2
= -15mA
Fall Time
t
f
30
ns
Note:
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width
300ms, duty cycle 2%.
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