DS30173 Rev. B-1
1 of 2
MMST5551
MMST5551
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Epitaxial Planar Die Construction
Complementary PNP Type Available
(MMST5401)
Ideal for Medium Power Amplification and
Switching
Ultra-Small Surface Mount Package
Characteristic
Symbol
MMST5551
Unit
Collector-Base Voltage
V
CBO
180
V
Collector-Emitter Voltage
V
CEO
160
V
Emitter-Base Voltage
V
EBO
6.0
V
Collector Current - Continuous (Note 1)
I
C
200
mA
Power Dissipation (Note 1)
P
d
200
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
qJA
625
K/W
Operating and Storage and Temperature Range
T
j
, T
STG
-55 to +150
C
Features
Maximum Ratings
@ T
A
= 25
C unless otherwise specified
A
E
J
L
M
B C
H
G
D
K
TOP VIEW
C
E
B
Mechanical Data
Case: SOT-323, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: K4N
Weight: 0.006 grams (approx.)
Notes:
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width
300ms, duty cycle 2%.
SOT-323
Dim
Min
Max
A
0.30
0.40
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
E
0.30
0.40
G
1.20
1.40
H
1.80
2.20
J
0.0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
All Dimensions in mm
NEW
PRODUCT
DS30173 Rev. B-1
2 of 2
MMST5551
NEW
PRODUCT
Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Notes:
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width
300ms, duty cycle 2%.
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V
(BR)CBO
180
V
I
C
= 100
mA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
160
V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
6.0
V
I
E
= 10
mA, I
C
= 0
Collector Cutoff Current
I
CBO
50
nA
mA
V
CB
= 120V, I
E
= 0
V
CB
= 120V, I
E
= 0, T
A
= 100
C
Emitter Cutoff Current
I
EBO
50
nA
V
EB
= 4.0V, I
C
= 0
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
80
80
30
250
I
C
= 1.0mA, V
CE
= 5.0V
I
C
= 10mA, V
CE
= 5.0V
I
C
= 50mA, V
CE
= 5.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
0.15
0.20
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
Base- Emitter Saturation Voltage
V
BE(SAT)
1.0
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
6.0
pF
V
CB
= 10V, f = 1.0MHz, I
E
= 0
Small Signal Current Gain
h
fe
50
250
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
f
T
100
300
MHz
V
CE
= 10V, I
C
= 10mA,
f = 100MHz
Noise Figure
NF
8.0
dB
V
CE
= 5.0V, I
C
= 200
mA,
R
S
= 1.0k
W, f = 1.0kHz
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