DS30166 Rev. 3 - 1
1 of 2
MMST6427
www.diodes.com
MMST6427
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and
Switching
High Current Gain
Ultra-Small Surface Mount Package
Characteristic
Symbol
MMST6427
Unit
Collector-Base Voltage
V
CBO
40
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
12
V
Collector Current - Continuous (Note 1)
I
C
500
mA
Power Dissipation (Note 1)
P
d
200
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
qJA
625
K/W
Operating and Storage and Temperature Range
T
j
, T
STG
-55 to +150
C
Features
A
M
J
L
F
D
B C
H
K
G
B
E
C
Mechanical Data
Case: SOT-323, Molded Plastic
Case Material - UL Flammability Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking (See Page 2): K1D
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approx.)
Maximum Ratings
@ T
A
= 25
C unless otherwise specified
SOT-323
Dim
Min
Max
A
0.25
0.40
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
E
0.30
0.40
G
1.20
1.40
H
1.80
2.20
J
0.0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.18
a
0
8
All Dimensions in mm
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
E
B
C
DS30166 Rev. 3 - 1
2 of 2
MMST6427
www.diodes.com
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V
(BR)CBO
40
V
I
C
= 100
mA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
40
V
I
C
= 100mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
12
V
I
E
= 10
mA, I
C
= 0
Collector Cutoff Current
I
CBO
50
nA
V
CB
= 30V, I
E
= 0
Collector Cutoff Current
I
CEO
1.0
mA
V
CE
= 25V, I
B
= 0
Emitter Cutoff Current
I
EBO
50
nA
V
EB
= 10V, I
C
= 0
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
10,000
20,000
14,000
100,000
200,000
140,000
I
C
= 10mA, V
CE
= 5.0V
I
C
= 100mA, V
CE
= 5.0V
I
C
= 500mA, V
CE
= 5.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
1.2
1.5
V
I
C
= 50mA, I
B
= 0.5mA
I
C
= 500mA, I
B
= 0.5mA
Base- Emitter Saturation Voltage
V
BE(SAT)
2.0
V
I
C
= 500mA, I
B
= 0.5mA
Base- Emitter On Voltage
V
BE(ON)
1.75
V
I
C
= 50mA, V
CE
=5.0V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
8.0 Typical
pF
V
CB
= 10V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
15 Typical
pF
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Ordering Information
(Note 3)
Device
Packaging
Shipping
MMST6427-7
SOT-323
3000/Tape & Reel
Notes:
2. Short duration test pulse used to minimize self-heating effect.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K1D= Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
K1D
YM
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
PDF 
ZIP