D
S30116 Rev. B-1 1 of 2 SB170 - SB1100
SB170 - SB1100
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
Maximum Ratings and Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
Surge Overload Rating to 25A Peak
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
High Temperature Soldering:
260
C/10 Second at Terminal
Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
Case: Molded Plastic
Terminals: Plated Leads -
Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.3 grams (approx.)
Mounting Position: Any
Marking: Type Number
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
A
A
B
C
D
Characteristic
Symbol
SB170
SB180
SB190
SB1100
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
70
80
90
100
V
RMS Reverse Voltage
V
R(RMS)
49
56
63
70
V
Average Rectified Output Current
@ T
T
= 85
C
I
O
1.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
25
A
Forward Voltage @ I
F
= 1.0A
@ T
A
= 25
C
V
FM
0.80
V
Peak Reverse Current
@ T
A
= 25
C
at Rated DC Blocking Voltage
@ T
A
= 100
C
I
RM
0.5
10
mA
Typical Junction Capacitance (Note 2)
C
j
80
pF
Typical Thermal Resistance Junction to Lead
R
qJL
15
K/W
Typical Thermal Resistance Junction to Ambient (Note 1)
R
qJA
50
K/W
Operating and Storage Temperature Range
T
j,
T
STG
-65 to +125
C
Notes:
1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DO-41
Dim
Min
Max
A
25.4
B
4.1
5.2
C
0.71
0.86
D
2.0
2.7
All Dimensions in mm
NEW
PRODUCT
NEW
PRODUCT
D
S30116 Rev. B-1 2 of 2 SB170 - SB1100
0.1
1.0
10
I
,
INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
20
0.5
0.1
0.9
1.3
1.7
2.1
T = 25 C
j
I Pulse Width = 300 s
F
10
20
30
40
0
1
10
100
I
,
PEAK
FOR
W
ARD
SURGE
CURRENT
(A)
FSM
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
Single Half Sine-Wave
(JEDEC Method)
T = 150 C
j
10
100
1000
0.1
1
10
100
C
,
JUNCTI
O
N
CAP
ACIT
ANCE
(pF)
j
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
T = 25 C
f = 1.0MHz
j
0
0.5
1.0
25
50
75
100
125
150
I
A
VERAGE
FOR
W
ARD
CURRENT
(A)
(O),
T , LEAD TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
L
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