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Электронный компонент: SB150

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DS23022 Rev. 4 - 2
1 of 3
SB120-SB160
www.diodes.com
SB120 - SB160
1.0A SCHOTTKY BARRIER RECTIFIER
Features
A
A
B
C
D
DO-41 Plastic
Dim
Min
Max
A
25.40
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
Surge Overload Rating to 40A Peak
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material - UL Flammability
Classification 94V-0
Mechanical Data
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.3 grams (approx.)
Mounting Position: Any
Marking: Type Number
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
SB120
SB130
SB140
SB150
SB160
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20
30
40
50
60
V
RMS Reverse Voltage
V
R(RMS)
14
21
28
35
42
V
Average Rectified Output Current
(Note 1)
(See Figure 1)
I
O
1.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
40
A
Forward Voltage (Note 2)
@ I
F
= 1.0A
V
FM
0.50
0.70
V
Peak Reverse Current
@ T
A
= 25
C
at Rated DC Blocking Voltage (Note 2)
@ T
A
= 100
C
I
RM
0.5
mA
10
5.0
Typical Thermal Resistance Junction to Lead (Note 1)
R
qJL
15
C/W
Typical Thermal Resistance Junction to Ambient
R
qJA
50
C/W
Operating Temperature Range
T
j
-65 to +125
-65 to +150
C
Storage Temperature Range
T
STG
-65 to +150
Notes:
1. Measured at ambient temperature at a distance of 9.5mm from the case.
2. Short duration test pulse used to minimize self-heating effect.
DS23022 Rev. 4 - 2
2 of 3
SB120-SB160
www.diodes.com
0.01
0.1
1.0
10
0
0.2
0.4
0.6
0.8
1.0
I
,
INST
ANT
A
NEOUS
FOR
W
A
RD
CURRENT
(A)
F
V , INSTANTANEOUS FWD VOLTAGE (V)
F
Fig. 3 Typ. Forward Characteristics - SB150 thru SB160
T = +125C
j
T = +25C
j
1% Duty Cycle
10
20
30
40
0
1
10
100
I
,
PEAK
FOR
W
ARD
S
URGE
C
URRENT
(A)
FSM
NUMBER OF CYCLES AT 60 Hz
Fig. 4 Max Non-Repetitive Peak Fwd Surge Current
8.3ms Single Half Sine-Wave
(JEDEC Method)
T = T
j
j(max)
10
100
1000
0.1
1
10
100
C
,
T
O
T
A
L
C
AP
ACIT
A
NCE
(pF)
T
V , REVERSE VOLTAGE (V)
R
Fig. 5 Typical Total Capacitance
SB150 - SB160
SB120 - SB140
T = 25
C
j
f = 1.0MHz
V
= 50m Vp-p
sig
0.1
1.0
10
0.2
0.4
0.6
0.8
1.0
1.2
I
,
INST
ANT
A
NEOUS
FWD
CURRENT
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig. 2 Typical Forward Characteristics - SB120 thru SB140
T = +25
C
j
T = +75
C
j
T = +125
C
j
T = -25
C
j
1% Duty Cycle
0
0.5
1.0
25
50
75
100
125
150
I
A
VERAGE
FOR
W
A
RD
CURRENT
(A)
(O),
T , LEAD TEMPERATURE (
C)
L
Fig. 1 Forward Current Derating Curve
Resistive or Inductive Load
0.375" (9.5mm) lead length
SB120 - SB140
SB150 & SB160
100
10
1
0.1
0.01
1000
10,000
0
25
100
PERCENTAGE OF PEAK REVERSE VOLTAGE (%)
Fig. 6 Typical Reverse Characteristics, SB120 thru SB140
50
75
T = +25
C
j
T = +125
C
j
T = -25
C
j
T = +75
C
j
DS23022 Rev. 4 - 2
3 of 3
SB120-SB160
www.diodes.com
100
10
1
0.1
1000
10,000
0
50
100
PERCENTAGE OF PEAK REVERSE VOLTAGE (%)
Fig. 7 Typical Reverse Characteristics, SB150 thru SB160
T = +25
C
j
T = +125
C
j
T = +70
C
j