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Электронный компонент: SB3100

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DS30134 Rev. 2 - 2
1 of 2
SB370-SB3100
SB370 - SB3100
3.0A SCHOTTKY BARRIER RECTIFIER
Features
DO-201AD
Dim
Min
Max
A
25.40
B
7.20
9.50
C
1.20
1.30
D
4.80
5.30
All Dimensions in mm
A
A
B
C
D
Maximum Ratings and Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
Surge Overload Rating to 80A Peak
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material - UL Flammability
Classification 94V-0
Mechanical Data
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 1.1 grams (approx.)
Mounting Position: Any
Marking: Type Number
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
SB370
SB380
SB390
SB3100
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
70
80
90
100
V
RMS Reverse Voltage
V
R(RMS)
49
56
63
70
V
Average Rectified Output Current
(Note 1)
@ T
L
= 80
C
I
O
3.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
80
A
Forward Voltage
@ I
F
= 3.0A
V
FM
0.79
V
Peak Reverse Current
@ T
A
= 25
C
at Rated DC Blocking Voltage
@ T
A
= 100
C
I
RM
0.5
20
mA
Typical Junction Capacitance (Note 2)
C
j
250
pF
Typical Thermal Resistance Junction to Ambient
R
qJA
20
K/W
Operating and Storage Temperature Range
T
j,
T
STG
-65 to +150
C
Notes:
1. Measured at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
DS30134 Rev. 2 - 2
2 of 2
SB370-SB3100
0
16
32
48
64
80
1
10
100
I
,
PEAK
FOR
W
A
RD
SURGE
CURRENT
(A)
FSM
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
Single Half-Sine-Wave
(JEDEC Method)
T = 100 C
j
10
100
1000
0.1
1
10
100
C
,
CAP
ACIT
ANCE
(pF)
j
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
f=1.0MHz
T = 25 C
j
0
20
40
60
80
100
120
140
I
,
INST
ANT
ANEOUS
REVERSE
CURRENT
(mA)
R
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
T = 100 C
j
T = 75 C
j
T = 25 C
j
100
10
1.0
0.1
0.01
1k
0.01
0.1
1.0
10
0
0.2
0.4
0.6
0.8
1.0
I
,
INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
1 0 0
0
0.5
1.0
25
50
75
100
125
150
I
A
VERAGE
FOR
W
ARD
CURRENT
(A)
O,
T , LEAD TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
L
1.5
2.0
2.5
3.0