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Электронный компонент: SBL3050PT

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D
S23018 Rev. E-2 1 of 2 SBL3030PT - SBL3060PT
SBL3030PT - SBL3060PT
30A SCHOTTKY BARRIER RECTIFIER
Features
A
B
E
G
J
L
M
N
K
S
M
H
R
D
C
Q
*2 Places
P*
TO-3P
Dim
Min
Max
A
3.20
3.50
B
4.59
5.16
C
20.80
21.30
D
19.70
20.20
E
2.10
2.40
G
0.51
0.76
H
15.90
16.40
J
1.70
2.70
K
3.10
3.30
L
3.50
4.51
M
5.20
5.70
N
1.12
1.22
P
1.93
2.18
Q
2.97
3.22
R
11.70
12.80
S
4.30 Typical
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
Plastic Material : UL Flammability
Classification Rating 94V-0
Mechanical Data
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Marking: Type Number
Weight: 2.24 grams (approx.)
Mounting Position: Any
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
SBL
3030PT
SBL
3035PT
SBL
3040PT
SBL
3045PT
SBL
3050PT
SBL
3060PT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
30
35
40
45
50
60
V
RMS Reverse Voltage
V
R(RMS)
21
24.5
28
31.5
35
42
V
Average Rectified Output Current
@ T
C
= 95
C
(Note 1)
I
O
30
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
275
A
Forward Voltage Drop
@ I
F
= 15A, T
C
= 25
C
V
FM
0.55
0.70
V
Peak Reverse Current
@ T
C
= 25
C
at Rated DC Blocking Voltage
@ T
C
= 100
C
I
RM
1.0
75
mA
Typical Junction Capacitance
(Note 2)
C
j
1100
pF
Typical Thermal Resistance Junction to Case
(Note 1)
R
qJc
2.0
K/W
Operating and Storage Temperature Range
T
j,
T
STG
-65 to +150
C
Notes: 1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
D
S23018 Rev. E-2 2 of 2 SBL3030PT - SBL3060PT
0.1
1.0
10
100
0.2
0.4
0.6
0.8
I
,
INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Fwd Characteristics per Element
F
SBL3030PT - SBL30450PT
SBL3050PT - SBL3060PT
T = 25C
Pulse width = 300 s
2% duty cycle
j
0
50
100
150
200
250
300
1
10
100
I
,
PEAK
FOR
W
ARD
SURGE
CURRENT
(A)
FSM
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
8.3 ms single half-sine-wave
JEDEC method
100
1000
4000
0.1
1.0
10
100
C
,
JUNCTION
CAP
ACIT
ANCE
(pF)
j
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance per Element
R
T = 25C
f = 1MHz
j
0.01
0.1
1.0
10
100
I
,
INST
ANT
ANEOUS
REVERSE
CURRENT
(A)
R
0
40
80
PERCENT OF PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics per Element
T = 100C
C
T = 75C
C
T = 25C
C
120
0
6
12
24
30
18
0
50
100
I
,
A
VERAGE
RECTIFIED
CURRENT
(A)
(A
V)
T , CASE TEMPERATURE (C)
Fig. 1 Forward Derating Curve
C
150