1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
2
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% Gemessen mit Impulsen t
p
= 300
:
s, Schaltverhltnis
#
2%
12
01.11.2003
1
2
3
Type
Code
2.1
0
.
1
2
0.1
1
0.1
1.
2
5
0
.
1
0.3
1.3
BC 846W ... BC 850W
General Purpose Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren fr die Oberflchenmontage
NPN
Power dissipation Verlustleistung
200 mW
Plastic case
SOT-323
Kunststoffgehuse
Weight approx. Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Dimensions / Mae in mm
1 = B
2 = E
3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25
/
C)
Grenzwerte (T
A
= 25
/
C)
BC 846W
BC 847W
BC 850W
BC 848W
BC 849W
Collector-Emitter-voltage
B open
V
CE0
65 V
45 V
30 V
Collector-Base-voltage
E open
V
CB0
80 V
50 V
30 V
Emitter-Base-voltage
C open
V
EB0
6 V
5 V
Power dissipation Verlustleistung
P
tot
200 mW
1
)
Collector current Kollektorstrom (DC)
I
C
100 mA
Peak Collector current Kollektor-Spitzenstrom
I
CM
200 mA
Peak Base current Basis-Spitzenstrom
I
BM
200 mA
Peak Emitter current Emitter-Spitzenstrom
- I
EM
200 mA
Junction temperature Sperrschichttemperatur
T
j
150
/
C
Storage temperature Lagerungstemperatur
T
S
- 65...+ 150
/
C
Characteristics (T
j
= 25
/
C)
Kennwerte (T
j
= 25
/
C)
Group A
Group B
Group C
DC current gain Kollektor-Basis-Stromverhltnis
2
)
V
CE
= 5 V, I
C
= 10
:
A
h
FE
typ. 90
typ. 150
typ. 270
V
CE
= 5 V, I
C
= 2 mA
h
FE
110...220
200...450
420...800
h-Parameters at V
CE
= 5V, I
C
= 2 mA, f = 1 kHz
Small signal current gain Stromverstrkung h
fe
typ. 220
typ. 330
typ. 600
Input impedance Eingangs-Impedanz
h
ie
1.6...4.5 k
S
3.2...8.5 k
S
6...15 k
S
Output admittance Ausgangs-Leitwert
h
oe
18 < 30
:
S
30 < 60
:
S
60 < 110
:
S
Reverse voltage transfer ratio
Spannungsrckwirkung
h
re
typ.1.5 *10
-4
typ. 2 *10
-4
typ. 3 *10
-4
1
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% Gemessen mit Impulsen t
p
= 300
:
s, Schaltverhltnis
#
2%
2
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
13
01.11.2003
General Purpose Transistors
BC 846W ... BC 850W
Characteristics (T
j
= 25
/
C)
Kennwerte (T
j
= 25
/
C)
Min.
Typ.
Max.
Collector saturation volt. Kollektor-Sttigungsspannung
1
)
I
C
= 10 mA, I
B
= 0.5 mA
V
CEsat
90 mV
250 mV
I
C
= 100 mA, I
B
= 5 mA
V
CEsat
200 mV
600 mV
Base saturation voltage Basis-Sttigungsspannung
1
)
I
C
= 10 mA, I
B
= 0.5 mA
V
BEsat
700 mV
I
C
= 100 mA, I
B
= 5 mA
V
BEsat
900 mV
Base-Emitter voltage Basis-Emitter-Spannung
1
)
V
CE
= 5 V, I
C
= 2 mA
V
BEon
580 mV
660 mV
700 mV
V
CE
= 5 V, I
C
= 10 mA
V
BEon
770 mV
Collector-Base cutoff current Kollektorreststrom
I
E
= 0, V
CB
= 30 V
I
CB0
15 nA
I
E
= 0, V
CB
= 30 V, T
j
= 150
/
C
I
CB0
5
:
A
Emitter-Base cutoff current Emitterreststrom
I
C
= 0, V
EB
= 5 V
I
EB0
100 nA
Gain-Bandwidth Product Transitfrequenz
V
CE
= 5 V, I
C
= 10 mA, f = 100 MHz
f
T
100 MHz
Collector-Base Capacitance Kollektor-Basis-Kapazitt
V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
C
CB0
3.5 pF
6 pF
Emitter-Base Capacitance Emitter-Basis-Kapazitt
V
EB
= 0.5 V, I
C
= i
c
= 0, f = 1 MHz
C
EB0
9 pF
Noise figure Rauschzahl
V
CE
= 5 V, I
C
= 200
:
A
R
G
= 2 k
S
, f = 1 kHz,
)
f = 200 Hz
BC 846W...
BC 848W
F
2 dB
10 dB
BC 849W...
BC 850W
F
1.2 dB
4 dB
V
CE
= 5 V, I
C
= 200
:
A
R
G
= 2 k
S
, f = 1 kHz,
f = 30 ... 15000 Hz
BC 849W
F
1.4 dB
4 dB
BC 850W
F
1.4 dB
4 dB
Thermal resistance junction to ambient air
Wrmewiderstand Sperrschicht umgebende Luft
R
thA
620 K/W
2
)
Recommended complementary PNP transistors
Empfohlene komplementre PNP-Transistoren
BC 856W ... BC 860W
Marking of available current gain
groups per type
Stempelung der lieferbaren Strom-
verstrkungsgruppen pro Typ
BC 846AW = 1A
BC 846BW = 1B
BC 847AW = 1E
BC 847BW = 1F
BC 847CW = 1G
BC 848AW = 1J
BC 848BW = 1K
BC 848CW = 1L
BC 849BW = 2B
BC 849CW = 2C
BC 850BW = 2F
BC 850CW = 2G
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