1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
2
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% Gemessen mit Impulsen t
p
= 300
:
s, Schaltverhltnis
#
2%
32
01.11.2003
2.
5
ma
x
1.
3
0
.
1
1.1
2.9
0.1
0.4
1
2
3
Type
Code
1.9
BCV 71, BCV 72
General Purpose Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren fr die Oberflchenmontage
NPN
Power dissipation Verlustleistung
250 mW
Plastic case
SOT-23
Kunststoffgehuse
(TO-236)
Weight approx. Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Dimensions / Mae in mm
1 = B
2 = E
3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25
/
C)
Grenzwerte (T
A
= 25
/
C)
BCV 71, BCV 72
Collector-Emitter-voltage
B open
V
CE0
60 V
Collector-Base-voltage
E open
V
CB0
80 V
Emitter-Base-voltage
C open
V
EB0
5 V
Power dissipation Verlustleistung
P
tot
250 mW
1
)
Collector current Kollektorstrom (DC)
I
C
100 mA
Peak Collector current Kollektor-Spitzenstrom
I
CM
200 mA
Junction temperature Sperrschichttemperatur
T
j
150
/
C
Storage temperature Lagerungstemperatur
T
S
- 65...+ 150
/
C
Characteristics (T
j
= 25
/
C)
Kennwerte (T
j
= 25
/
C)
Min.
Typ.
Max.
Collector-Base cutoff current Kollektorreststrom
I
E
= 0, V
CB
= 20 V
I
CB0
100 nA
I
E
= 0, V
CB
= 20 V, T
j
= 100
/
C
I
CB0
10
:
A
Emitter-Base cutoff current Emitterreststrom
I
C
= 0, V
EB
= 5 V
I
EB0
100 nA
DC current gain Kollektor-Basis-Stromverhltnis
2
)
V
CE
= 5 V, I
C
= 10
:
A
BCV 71
h
FE
90
BCV 72
h
FE
150
V
CE
= 5 V, I
C
= 2 mA
BCV 71
h
FE
110
220
BCV 72
h
FE
200
450
1
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% Gemessen mit Impulsen t
p
= 300
:
s, Schaltverhltnis
#
2%
2
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
33
01.11.2003
General Purpose Transistors
BCV 71, BCV 72
Characteristics (T
j
= 25
/
C)
Kennwerte (T
j
= 25
/
C)
Min.
Typ.
Max.
Collector saturation volt. Kollektor-Sttigungsspg.
1
)
I
C
= 10 mA, I
B
= 0.5 mA
V
CEsat
120 mV
250 mV
I
C
= 50 mA, I
B
= 5 mA
V
CEsat
210 mV
Base saturation voltage Basis-Sttigungsspannung
1
)
I
C
= 10 mA, I
B
= 0.5 mA
V
BEsat
750 mV
I
C
= 50 mA, I
B
= 2.5 mA
V
BEsat
850 mV
Base-Emitter voltage Basis-Emitter-Spannung
1
)
V
CE
= 5 V, I
C
= 2 mA
V
BEon
550 mV
700 mV
Gain-Bandwidth Product Transitfrequenz
V
CE
= 5 V, I
C
= 10 mA, f = 100 MHz
f
T
100 MHz
Collector-Base Capacitance Kollektor-Basis-Kapazitt
V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
C
CB0
2.5 pF
Noise figure Rauschzahl
V
CE
= 5 V, I
C
= 200
:
A, R
G
= 2 k
S
,
f = 1 kHz,
)
f = 200 Hz
F
10 dB
Thermal resistance junction to ambient air
Wrmewiderstand Sperrschicht umgebende Luft
R
thA
420 K/W
2
)
Marking Stempelung
BCV 71 = K7
BCV 72 = K8
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