1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
2
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% Gemessen mit Impulsen t
p
= 300
:
s, Schaltverhltnis
#
2%
6
01.11.2003
BFN 22
High Voltage Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren fr die Oberflchenmontage
NPN
Power dissipation Verlustleistung
250 mW
Plastic case
SOT-23
Kunststoffgehuse
(TO-236)
Weight approx. Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Dimensions / Mae in mm
1 = B
2 = E
3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25
/
C)
Grenzwerte (T
A
= 25
/
C)
BFN 22
Collector-Emitter-voltage
B open
V
CE0
250 V
Collector-Base-voltage
E open
V
CB0
250 V
Collector-Emitter-voltage
R
BE
= 2.7 k
S
V
CER
250 V
Emitter-Base-voltage
C open
V
EB0
5 V
Power dissipation Verlustleistung
P
tot
250 mW
1
)
Collector current Kollektorstrom (dc)
I
C
50 mA
Peak Collector current Kollektor-Spitzenstrom
I
CM
100 mA
Junction temperature Sperrschichttemperatur
T
j
150
/
C
Storage temperature Lagerungstemperatur
T
S
- 65...+ 150
/
C
Characteristics (T
j
= 25
/
C)
Kennwerte (T
j
= 25
/
C)
Min.
Typ.
Max.
Collector-Base cutoff current Kollektorreststrom
I
E
= 0, V
CB
= 200 V
I
CB0
100 nA
I
E
= 0, V
CB
= 200 V, T
j
= 150
/
C
I
CB0
20
:
A
Emitter-Base cutoff current Emitterreststrom
I
C
= 0, V
EB
= 5 V
I
EB0
100 nA
Collector saturation volt. Kollektor-Sttigungsspg.
2
)
I
C
= 10 mA, I
B
= 1 mA
V
CEsat
500 mV
1
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% Gemessen mit Impulsen t
p
= 300
:
s, Schaltverhltnis
#
2%
2
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
7
01.11.2003
High Voltage Transistors
BFN 22
Characteristics (T
j
= 25
/
C)
Kennwerte (T
j
= 25
/
C)
Min.
Typ.
Max.
Base saturation voltage Basis-Sttigungsspannung
1
)
I
C
= 10 mA, I
B
= 1 mA
V
BEsat
1 V
DC current gain Kollektor-Basis-Stromverhltnis
1
)
V
CE
= 20 V, I
C
= 25 mA
h
FE
50
Gain-Bandwidth Product Transitfrequenz
V
CE
= 10 V, I
C
= 10 mA, f = 100 MHz
f
T
100 MHz
Collector-Base Capacitance Kollektor-Basis-Kapazitt
V
CB
= 30 V, I
E
= i
e
= 0, f = 1 MHz
C
CB0
0.8 pF
Thermal resistance junction to ambient air
Wrmewiderstand Sperrschicht umgebende Luft
R
thA
420 K/W
2
)
Recommended complementary PNP transistors
Empfohlene komplementre PNP-Transistoren
BFN 23
Marking - Stempelung
BFN 22 = HB
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