This document contains information on a product that is currently released to production at DPAC Technologies.
DPAC reserves the right to change products or specifications herein without prior notice.
30A253-10
REV. C 3/03
1 Gigabit CMOS DDR SDRAM
DPDD128MX8XSAY5
1
ADVAN C E D C O M P O N E NTS PAC K AG I N G
PIN NAMES
A0-A12
Row Address:
A0-A12
Column Address:
A0-A9, A11, A12
BA0,BA1
Bank Select Address
A10/AP
Auto Precharge
DQ0-DQ7
Data In/Data Out
CAS
Column Address Strobe
CS
Chip Select
RAS
Row Address Strobe
WE
Data Write Enable
CK, CK
Differential Clock Inputs
CKE
Clock Enable
DQS
Data Strobe
DM
Data Masks
V
DD
Power Supply
V
SS
Ground
V
DDQ
DQ Power Supply
V
SSQ
DQ Ground
V
REF
SSTL_2 Reference Voltage
DNU
Do Not Use
NC
No Connect
DESCRIPTION:
The Memory StackTM series is a family of interchangeable memory devices. The 1 Gb, CMOS DDR Synchronous DRAM assembly
utilizes the space saving LP-StackTM technology to increase memory density. This stack is constructed with two 512Mb (128M x 4)
DDR SDRAMs.
This 1 Gb LP-StackTM, has been designed to fit in the same
footprint as the 512Mb (128M x 4) DDR SDRAM TSOPII
monolithic. This allows system upgrade without electrical or
mechanical redesign, providing an alternative low cost memory
solution.
FEATURES:
Electrical characteristics meet semiconductor
manufacturers' datasheet
Memory organization:
(2) 512Mb memory devices. Each device arranged
as 128M x 4 bits (32M x 4 bits x 4 banks)
Memory stack organization:
128M x 8 bits (32M x 8 bits x 4 banks)
JEDEC approved, 1 Rank stack pinout and footprint
(with 1 CS, 1CKE and DQ0 through DQ7)
Optimized for RDIMMs
IPC-A-610, class 2, manufacturing standards
Lead free manufacturing process
Package: 66-Pin TSOPII stack
FUNCTIONAL BLOCK DIAGRAM
DM
CAS
WE
DQ0-DQ7
CS
RAS
CK
DQS
CK
A0-A12
VREF
CKE
BA0-BA1
(32M x 4 bits x 4 banks)
(32M x 4 bits x 4 banks)
512 Mb DDR SDRAM
PINOUT DIAGRAM
1
(TOP VIEW)
60
NC
VDD
1
2
54
NC
VDDQ
3
53
NC
4
52
VSSQ
DQ1
5
51
DQS
VSSQ
6
50
DNU
NC
7
49
VREF
8
48
VSS
VDDQ
9
47
NC
10
46
CK
DQ3
11
45
CK
VSSQ
12
44
CKE
NC
13
43
NC
NC
14
42
A12
VDDQ
15
41
A11
NC
16
40
A9
NC
17
39
A8
VDD
18
38
A7
DNU
19
37
A6
NC
20
36
A5
WE
21
35
A4
CAS
22
34
VSS
RAS
23
59
DQ5
CS
24
58
VSSQ
NC
25
57
NC
BA0
26
56
DQ4
BA1
27
55
VDDQ
DQ2
DQ0
DM
NC
33
VDD
32
A3
31
A2
30
A1
29
A0
28
A10/AP
VDDQ
61
DQ6
62
NC
63
VSSQ
64
DQ7
65
VSS
66
2
DPAC Technologies Products & Services for the Integration Age
7321 Lincoln Way, Garden Grove, CA 92841 Tel 714 898 0007 Fax 714 897 1772
www.dpactech.com Nasdaq: DPAC
2003 DPAC Technologies, all rights reserved. DPAC TechnologiesTM, Memory StackTM, System StackTM, LP-StackTM, CS-StackTM are trademarks of DPAC Technologies Corp.
DPDD128MX8XSAY5
1 Gigabit CMOS DDR SDRAM
30A253-10
REV. C 3/03
MECHANICAL DIAGRAM
1
.015 [.18]
.0256 [.65
.102 MAX [2.59 MAX]
PIN 1
INDEX
TOP VIEW
SIDE VIEW
BOTTOM VIEW
END VIEW
.502.008
.891 MAX.
[12.75.20]
[22.63 MAX.]
TYP
TYP
END VIEWDETAIL
.463 [11.76] TYP
Lead Toe-to-Toe per device datasheet
Inch [mm]
.004 [.10] from seating plane
COPLANARITY:
ORDERING INFORMATION
DP
X
-
MFR
DOUBLE DATA RATE SYNCHRONOUS DRAM
PREFIX
DD 128M X
8
Y5
PACKAGE
MEMORY
DESIG
MEMORY
TYPE
MEMORY MODULE WITHOUT SUPPORT LOGIC
DEPTH
WIDTH
DESIG
X
512 MEGABIT BASED
STACKABLE TSOP
MANUFACTURER CODE *
XX
-
MFR ID
SUPPLIER
DP
SUPPLIER CODE *
I/O TYPE
S
SSTL INPUTS/OUTPUTS
WIDTH
DEVICE
A
x4 MEMORY BASED
CLOCK
XX
SPEED
REV
REVISION NOT SPECIFIED
MANUFACTURER DIE REVISION
BLANK
X
XX
LATENCY
CAS
CAS LATENCY
CLOCK SPEED (ns)
* Contact your sales representative for supplier and manufacturer codes.
NOTES:
1. AC Parameters of base memory are unchanged from device manufacturers' specifications.
2. DC Parameters may be affected by stacking. Please refer to application note 53A004-00 for further information.
3. For assembly and inspection procedures, refer to application note 53A001-00.
4. Maximum reflow temperature recommendation is 215C.
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