DCR5980Z
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www.dynexsemi.com
FEATURES
s
Double Side Cooling
s
High Surge Capability
s
Low Inductance Internal Construction
APPLICATIONS
s
High Power Converters
s
DC Motor Control
s
High Voltage Power Supplies
VOLTAGE RATINGS
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR5980Z14
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
KEY PARAMETERS
V
DRM
1800V
I
T(AV)
(max)
5985A
I
TSM
(max)
98000A
dV/dt
1000V/
s
dI/dt
250A/
s
DCR5980Z
Phase Control Thyristor
Target Information
DS5482-1.1 February 2002
Conditions
T
vj
= 0 to 125C,
I
DRM
= I
RRM
= 500mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Lower voltage grades available.
1800
1600
1400
1200
DCR5980Z18
DCR5980Z16
DCR5980Z14
DCR5980Z12
Part and Ordering
Number
Repetitive Peak
Voltages
V
DRM
and V
DRM
V
Fig. 1 Package outline
Outline type code: Z
(See Package Details for further information)
DCR5980Z
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www.dynexsemi.com
Symbol
I
T(AV)
I
T(RMS)
I
T
I
T(AV)
I
T(RMS)
I
T
CURRENT RATINGS
T
case
= 60C unless stated otherwise.
Test Conditions
Half wave resistive load
-
-
Half wave resistive load
-
-
Units
A
A
A
A
A
A
Max.
5985
9400
8400
3820
6000
4920
Parameter
Mean on-state current
RMS value
Continuous (direct) on-state current
Mean on-state current
RMS value
Continuous (direct) on-state current
Single Side Cooled
Double Side Cooled
Symbol
I
T(AV)
I
T(RMS)
I
T
I
T(AV)
I
T(RMS)
I
T
T
case
= 80C unless stated otherwise.
Test Conditions
Half wave resistive load
-
-
Half wave resistive load
-
-
Units
A
A
A
A
A
A
Max.
4650
7300
6360
2910
4570
3630
Parameter
Mean on-state current
RMS value
Continuous (direct) on-state current
Mean on-state current
RMS value
Continuous (direct) on-state current
Single Side Cooled
Double Side Cooled
DCR5980Z
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www.dynexsemi.com
Parameter
Surge (non-repetitive) on-state current
I
2
t for fusing
Surge (non-repetitive) on-state current
I
2
t for fusing
Test Conditions
10ms half sine, T
case
= 125C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine, T
case
= 125C
V
R
= 0
Symbol
I
TSM
I
2
t
I
TSM
I
2
t
SURGE RATINGS
Units
kA
A
2
s
kA
A
2
s
Max.
78.0
30.4 x 10
6
98.0
48 x 10
6
Parameter
Peak reverse and off-state current
Max. linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
Delay time
Latching current
Holding current
Test Conditions
At V
RRM
/V
DRM
, T
case
= 125C
To 67% V
DRM
, T
j
= 125C
From 67% V
DRM
to 1100A
Repetitive 50Hz
Gate source 1A,
Non-repetitive
t
r
= 0.5
s, T
j
= 125C
At T
vj
= 125C
At T
vj
= 125C
V
D
= 67% V
DRM
, gate source 20V, 10
t
r
= 0.5
s, Tj = 25C
T
j
= 25C, V
D
= 5V
T
j
= 25C, V
GK
=
Symbol
I
RRM
/I
RRM
dV/dt
dI/dt
V
T(TO)
r
T
t
gd
I
L
I
H
DYNAMIC CHARACTERISTICS
Units
mA
V/
s
A/
s
A/
s
V
m
s
mA
mA
Max.
500
1000
250
500
0.77
0.05
1.5
750
200
Min.
-
-
-
-
-
-
1.0
150
40
DCR5980Z
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www.dynexsemi.com
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table, gate characteristics curve
-
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
GATE TRIGGER CHARACTERISTICS AND RATINGS
Max.
3.5
500
0.25
30
0.25
5
30
150
10
Units
V
mA
V
V
V
V
A
W
W
Parameter
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Virtual junction temperature
Storage temperature range
Clamping force
Test Conditions
Double side cooled
DC
Single side cooled
Anode DC
Cathode DC
Clamping force 83.0kN
Double side
(with mounting compound)
Single side
On-state (conducting)
Reverse (blocking)
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(c-h)
T
vj
T
stg
F
m
Units
CW
CW
CW
CW
CW
C
C
C
kN
Max.
0.0065
0.013
0.013
0.001
0.002
135
125
125
91.0
Min.
-
-
-
-
-
-
-
55
74.0
DCR5980Z
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www.dynexsemi.com
CURVES
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Power dissipation
V
TM
Equation:-
V
TM
= A + Bln (I
T
) + C.I
T
+D.
I
T
Where
A = 0.4624
B = 0.0275
C = 2.2501 x 10
5
D = 0.0032
these values are valid for T
j
= 125C for I
T
500A to 7000A
0
1000
2000
3000
4000
5000
6000
7000
8000
0.7
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
Instant on-state voltage, V
T
- (V)
Instantaneous on-state current, I
T
-(A)
0
1000
2000
3000
4000
5000
6000
0
1000
2000
3000
4000
5000
6000
Mean on-state current, I
T(AV)
- (A)
Mean power dissipation - (W)
dc
1/2 wave
3 phase
6 phase
DCR5980Z
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www.dynexsemi.com
Fig.4 Recovered charge
Fig.5 Gate characteristics
Fig.6 Maximum (limit) transient thermal impedance -
junction to case (C/W)
Fig.7 Sub-cycle surge current
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
0
2
4
6
8
10
11
Rate of decay of on-state current, di/dt - (A/s)
Recoverd charge, Q
r
- (
C)
1
3
5
7
9
100
10
1
0.1
0.001
0.1
0.01
1.0
10
V
FGM
Lower Lim
it 1%
Upper Limit
99
%
T
j
= 25C
V
GD
Gate trigger voltage, V
GT
- (V)
Gate trigger current, I
GT
- (A)
100W
50W
20W
10W
I
GD
I
FGM
Table gives pulse power P
GM
in Watts
Pulse Width
s
100
200
500
1ms
10ms
50
150
150
150
150
20
100
150
150
150
100
-
400
150
125
100
25
-
Frequency Hz
10
1
0.1
0.01
0.001
Time - (s)
0.1
0.01
0.001
0.0001
Thermal impedance - (
C/W)
Double side cooled
Anode side cooled
100
Conduction
d.c.
Halfwave
3 phase 120
6 phase 60
Effective thermal resistance
Junction to case C/W
Double side
0.0065
0.0072
0.0073
0.0076
Anode side
0.0130
0.0137
0.0138
0.0141
0
10
20
30
40
50
0
10
20
30
40
50
1
3
6
9
10
Pulse width - (ms)
Peak half sine on-state current - (kA)
I
2
t value - (A
2
s x 10
6
)
2
4
5
7
8
I
TSM
I
2
t
I
2
t =
2
x t
2
DCR5980Z
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www.dynexsemi.com
Fig.8 Multi-cycle surge current
0
5
10
15
20
25
0
10
15
20
25
30
35
40
45
50
Number of cycles @ 50Hz
Peak half sine wave on-state current - (kA)
5
DCR5980Z
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www.dynexsemi.com
151 max
100
100
148 max
37.5 max
2 holes 3.6
0.5 depth 2.0
(One in each electrode)
Cathode
Anode
Gate tab
Cathode tab
Nominal weight: 2800g
Clamping force: 83kN
10%
Lead length: 500mm
Lead terminal connector: M4 ring
Package outline type code: Z
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.
DCR5980Z
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www.dynexsemi.com
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of `T' 23mm and `E' 30mm
discs, and bar clamps right up to 83kN for our `Z' 100mm thyristors and diodes.
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
CUSTOMER SERVICE CENTRES
Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020
SALES OFFICES
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
Rest Of World Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
Dynex Semiconductor 2002 Publication No. DS5482-1 Issue No. 1.1 February 2002
TECHNICAL DOCUMENTATION NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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