DIM800DCM17-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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FEATURES
s
10
s Short Circuit Withstand
s
High Thermal Cycling Capability
s
Non Punch Through Silicon
s
Isolated MMC Base with AlN Substrates
APPLICATIONS
s
Inverters
s
Motor Controllers
s
Traction Drives
The Powerline range of modules includes half bridge, dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 2400A.
The DIM800DCM17-A000 is a 1700V, n channel
enhancement mode insulated gate bipolar transistor (IGBT)
chopper module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10
s short circuit withstand.
This module is optimised for traction drives and other
applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM800DCM17-A000
Note: When ordering, please use the whole part number.
KEY PARAMETERS
V
CES
1700V
V
CE(sat)
*
(typ)
2.7V
I
C
(max)
800A
I
C(PK)
(max)
1600A
*(measured at the power busbars and not the auxiliary terminals)
DIM800DCM17-A000
IGBT Chopper Module
Replaces May 2001, version DS5444-2.0
DS5444-3.0 March 2002
Fig. 1 Chopper circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: D
(See package details for further information)
3(C1)
5(E
1
)
6(G
1
)
7(C
1
)
1(E1)
4(E2)
2(C2)
DIM800DCM17-A000
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Test Conditions
V
GE
= 0V
-
T
case
= 75C
1ms, T
case
= 105C
T
case
= 25C, T
j
= 150C
V
R
= 0, t
p
= 10ms, T
vj
= 125C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
1
= 1500V, V
2
= 1100V, 50Hz RMS
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
I
2
t
V
isol
Q
PD
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Units
V
V
A
A
W
kA
2
s
kA
2
s
V
PC
Max.
1700
20
800
1600
6940
120
270
4000
10
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I
2
t value (IGBT arm)
Diode I
2
t value (Diode arm)
Isolation voltage - per module
Partial discharge - per module
DIM800DCM17-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Parameter
Thermal resistance - transistor (per arm)
Thermal resistance - diode (IGBT arm)
Thermal resistance - diode (Diode arm)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AlN
Baseplate material:
AlSiC
Creepage distance:
20mm
Clearance:
10mm
CTI (Critical Tracking Index): 175
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C/kW
C/kW
C
C
C
Nm
Nm
Nm
Max.
18
40
27
8
150
125
125
5
2
10
Typ.
-
-
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
-
40
-
-
-
DIM800DCM17-A000
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125C
V
GE
=
20V, V
CE
= 0V
I
C
= 40mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 800A
V
GE
= 15V, I
C
= 800A, , T
case
= 125C
DC
t
p
= 1ms
I
F
= 800A
I
F
= 800A, T
case
= 125C
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
-
T
j
= 125C, V
CC
= 1000V,
I
1
t
p
10
s, V
CE(max)
= V
CES
L*. di/dt
I
2
IEC 60747-9
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage (IGBT arm)
Diode forward voltage (Diode arm)
Diode forward voltage (IGBT arm)
Diode forward voltage (Diode arm)
Input capacitance
Module inductance - per arm
Internal transistor resistance - per arm
Short circuit. I
SC
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
L
M
R
INT
SC
Data
Units
mA
mA
A
V
V
V
A
A
V
V
V
V
nF
nH
m
A
A
Max.
1
25
4
6.5
3.2
4.0
800
1600
2.5
2.3
2.6
2.3
-
-
-
-
-
Typ.
-
-
-
5.5
2.7
3.4
-
-
2.2
2.0
2.3
2.0
60
20
0.27
3700
3200
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
-
-
-
Note:
Measured at the power busbars and not the auxiliary terminals)
* L is the circuit inductance + L
M
DIM800DCM17-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
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Units
ns
ns
mJ
ns
ns
mJ
C
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Typ.
1250
170
230
250
250
275
9.0
250
530
160
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 800A
V
GE
=
15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 2.2
L ~ 100nH
I
F
= 800A, V
R
= 900V,
dI
F
/dt = 4000A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
g
Q
rr
I
rr
E
REC
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
1500
200
360
400
250
425
425
600
250
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 800A
V
GE
=
15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 2.2
L ~ 100nH
I
F
= 800A, V
R
= 900V,
dI
F
/dt = 4000A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
DIM800DCM17-A000
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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TYPICAL CHARACTERISTICS
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
0
50
100
150
200
250
300
350
400
450
0
200
400
600
800
1000
Collector current, I
C
- (A)
Switching energy - (mJ)
E
on
E
off
E
rec
Conditions:
V
ce
= 900V
T
c
= 125C
R
g
= 2.2
0
200
400
600
800
Gate Resistance, R
g
- (Ohms)
Switching energy - (mJ)
0
2
4
6
8
10
12
Conditions:
V
ce
= 900V
I
C
= 800A
T
c
= 125C
E
on
E
off
E
rec
0
200
400
600
800
1000
1200
1400
1600
1800
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Collector-emitter voltage, V
ce
- (V)
Collector current, I
c
- (A)
V
GE
= 20V
15V
12V
10V
Common emitter
T
case
= 25C
V
ce
is measured at power busbars
and not the auxiliary terminals
0
200
400
600
800
1000
1200
1400
1600
1800
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
Collector-emitter voltage, V
ce
- (V)
Collector current, I
c
- (A)
V
GE
= 20V
15V
12V
10V
Common emitter
T
case
= 125C
V
ce
is measured at power busbars
and not the auxiliary terminals
DIM800DCM17-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/10
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Fig. 7 Diode typical forward characteristics
Fig. 8 Reverse bias safe operating area
Fig. 9 Diode reverse bias safe operating area
0
200
400
600
800
1000
1200
1400
1600
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Foward voltage, V
F
- (V)
Foward current, I
F
- (A)
Arm 3-1: T
j
= 25C
Arm 3-1: T
j
= 125C
Arm 2-4: T
j
= 25C
Arm 2-4: T
j
= 125C
V
F
is measured at power busbars
and not the auxiliary terminals
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0
400
800
1200
1600
2000
Collector-emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
T
case
= 125C
V
ge
= 15V
R
g(min)
= 2.2
Module
Chip
0
100
200
300
400
500
600
700
800
900
1000
1100
0
400
800
1200
1600
2000
Reverse voltage, V
R
- (V)
Reverse current, I
R
- (A)
T
j
= 125C
Antiparallel Diode
Freewheel Diode
Fig. 10 Forward bias safe operating area
1
10
100
1000
10000
1
10
100
1000
10000
Collector-emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
I
C(max)
DC
t
p
= 1 ms
t
p
= 100s
T
vj
= 125C, T
c
= 75C
t
p
= 50s
DIM800DCM17-A000
8/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Fig. 15 DC current rating vs case temperature
0
200
400
600
800
1000
1200
1400
0
20
40
60
80
100
120
140
160
Case temperature, T
case
- (C)
DC collector current, I
C
- (A)
Fig. 13 Transient thermal impedance
1
10
100
0.001
0.01
1
0.1
10
Pulse width, t
p
- (s)
Transient thermal impedance, Z
th (j-c)
- (
C/kW )
Antiparallel Diode
Freewheel Diode
Transistor
1
0.4391
0.045
1.5612
0.0063516
1.0725
0.006892
R
i
(C/KW)
i
(ms)
R
i
(C/KW)
i
(ms)
R
i
(C/KW)
i
(ms)
IGBT
Antiparallel Diode
Freewheel Diode
2
3.1937
2.8869
5.7426
1.4746
3.8669
1.5269
3
4.1465
21.7141
6.999
13.9664
5.0773
15.5035
4
10.2356
152.6381
25.6068
111.7517
16.9243
118.8266
DIM800DCM17-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
9/10
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PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Nominal weight: 1050g
Module outine type code: D
DIM800DCM17-A000
10/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19.
France & Spain: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59.
Germany, Northern Europe & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
North America: Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide.
Dynex Semiconductor 2002 Publication No. DS5444-3 Issue No. 3.0 March 2002
TECHNICAL DOCUMENTATION NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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