e
1
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
50
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
0.7
Adc
Total Device Dissipation at Tflange = 25C
P
D
10
Watts
Above 25C derate by
0.057
W/C
Storage Temperature
Tstg
150
C
Thermal Resistance (Tflange = 70C)
R
JC
17.5
C/W
PTB 20046
1 Watt, 14651513 MHz
Cellular Radio RF Power Transistor
Description
The 20046 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1465 to 1501 MHz. Rated at 1
watt minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
1 Watt, 14651513 MHz
Class AB Characteristics
18% Collector Efficiency at 1 Watt
Gold Metallization
Silicon Nitride Passivated
Package 20201
20046
LOT CODE
9/28/98
PTB 20046
2
e
Z Source
Z Load
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 10 mA, R
BE
= 22
V
(BR)CER
50
--
--
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 10 mA
V
(BR)CES
50
--
--
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
4
5
--
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 1 A
h
FE
20
50
120
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 26 Vdc, Pout = 1 W, I
CQ
= 40 mA, f = 1501 MHz)
G
pe
10.5
--
--
dB
Power Output at 1 dB Compression
(V
CC
= 26 Vdc, I
CQ
= 40 mA, f = 1501 MHz)
P-1dB
2.5
--
--
Watts
Collector Efficiency
(V
CC
= 26 Vdc, Pout = 1 W, I
CQ
= 40 mA, f = 1501 MHz)
C
18
--
--
%
Intermodulation Distortion
(V
CC
= 26 Vdc, Pout = 1 W(PEP), I
CQ
= 40 mA,
IMD
--
-23
--
dBc
f
1
= 1500 MHz, f
2
= 1501 MHz)
Load Mismatch Tolerance
(V
CC
= 26 Vdc, Pout = 1 W, I
CQ
= 40 mA,
--
--
5:1
--
f = 1501 MHz--all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 26 Vdc, Pout = 1 W, I
CQ
= 40 mA)
Frequency
Z Source
Z Load
MHz
R
jX
R
jX
1477
10.42
-1.49
8.69
15.67
1489
10.20
-1.26
8.84
16.01
1501
9.87
-1.05
9.08
16.44
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change
without notice.
LF
Ericsson Components AB 1994
EUS/KR 1301-PTB 20046 Uen Rev. D 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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