e
1
0
2
4
6
8
10
12
14
16
0.00
0.50
1.00
1.50
2.00
Input Power (Watts)
Output Power (Watts)
f = 1.65 GHz
I
CQ
= 100 mA
+26V
+24V
+22V
Typical Output Power vs. Input Power
PTB 20079
10 Watts, 1.61.7 GHz
INMARSAT RF Power Transistor
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
50
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
1.4
Adc
Total Device Dissipation at Tflange = 25 C
P
D
52
Watts
Above 25 C derate by
0.29
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (Tflange = 70 C)
R
JC
3.4
C/W
20079
LOT CODE
Description
The 20079 is a class A/AB, NPN, silicon bipolar junction, internally-
matched, common emitter RF Power transistor intended for 26 Vdc
operation across 1.6 to 1.7 GHz frequency band. It is rated at 10
Watts minimum output power for PEP applications. Ion implantation,
nitride surface passivation and gold metallization ensure excellent
device reliability. 100% lot traceability is standard.
10 Watts, 1.61.7 GHz
Class A/AB Characteristics
38% Collector Efficiency at 10 Watts
Gold Metallization
Silicon Nitride Passivated
Package 20209
9/28/98
PTB 20079
2
e
Frequency
Z Source
Z Load
GHz
R
jX
R
jX
1.6
3.9
-4.7
6.1
-0.7
1.65
3.1
-3.8
6.1
0.0
1.7
2.3
-3.7
6.1
0.7
Z Source
Z Load
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
C
= 15 mA, R
BE
= 22
V
(BR)CER
55
--
--
Vdc
Breakdown Voltage E to B
I
E
= 10 mA
V
(BR)EBO
4.0
--
--
Vdc
DC Current Gain
I
C
= 1 A, V
CE
= 5 V
h
FE
20
--
100
--
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Power Gain, Common-Emitter
(V
CC
= 26 Vdc, P
OUT
= 3 W, I
CQ
= 120 mA, f = 1.65 GHz)
G
pe
10.5
11
--
dB
Efficiency
(V
CC
= 26 Vdc, P
OUT
= 10 W, I
CQ
= 120 mA, f = 1.65 GHz)
C
37
40
--
%
Power Output at 1 dB Compression
(V
CC
= 26 Vdc, I
CQ
= 120 mA, f = 1.65 GHz)
P-1dB
10.0
12
--
Watts
Impedance Data
(data shown for fixed-tuned broadband circuit)
V
CC
= 26 Vdc, P
OUT
= 10 W, I
CQ
= 120 mA
Z
0
= 50
5/6/98
PTB 20079
3
e
Typical Performance
Gain vs. Frequency
(as measured in a broadband circuit)
8
9
10
11
12
13
1.60
1.62
1.64
1.66
1.68
1.70
Frequency (GHz)
Gain (dB)
P
OUT
= 10 W
I
CQ
= 100 mA
+26 V
+24 V
+22 V
Power-Added Efficiency vs. Pout
0
10
20
30
40
50
60
0
4
8
12
16
Power Output (Watts)
Power-Added Efficiency (%)
f = 1.65 GHz
I
CQ
= 100 mA
V
CC
+ 22 V
+ 24 V
+ 26 V
3rd Order IMD vs. PEP
-60
-50
-40
-30
-20
-10
0
0
5
10
15
20
Output Power (PEP) (Watts)
Intermodulation Distortion (dB)
V
CC
= 24 V
f
1
= 1650.0 MHz
f
2
= 1650.2 MHz
I
CQ
100 mA
200 mA
400 mA
800 mA
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
1996 Ericsson Inc.
EUS/KR 1301-PTB 20079 Uen Rev. C 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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