e
1
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 28 V, P
OUT
= 10 W, I
DQ
= 360 mA, f = 1.5 GHz)
G
ps
11.0
13.0
--
dB
Power Output at 1 dB Compressed
(V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 360 mA, f = 1.5 GHz)
P-1dB
30
--
--
Watts
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 360 mA, f = 1.5 GHz)
h
45
48
--
%
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 30 W(PEP), I
DQ
= 360 mA, f = 1.5 GHz--
Y
--
--
10:1
--
all phase angles at frequency of test)
All published data at T
CASE
= 25C unless otherwise indicated.
INTERNALLY MATCHED
Performance at 1.5 GHz, 28 Volts
- Output Power = 30 Watts Min
- Power Gain = 13 dB Typ
- Efficiency = 48% Typ
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
100% Lot Traceability
PTF 10021
30 Watts, 1.41.6 GHz
GOLDMOS
TM
Field Effect Transistor
10021
A-1234569813
0
10
20
30
40
0
1
2
3
4
5
Input Power (Watts)
O
u
tput Pow
e
r (Watts)
V
DD
= 28 V
I
DQ
= 360 mA
f = 1.5 GHz
Typical Output Power vs. Input Power
Package 20237
Description
The PTF 10021 is an internally matched common source N-channel
enhancement-mode lateral MOSFET intended for linear driver and
final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. It is
rated at 30 watts power output. Nitride surface passivation and full
gold metallization ensure excellent device lifetime and reliability.
PTF 10021
2
e
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 25 mA
V
(BR)DSS
65
--
--
Volts
Drain-Source Leakage Current
V
DS
= 28 V, V
GS
= 0 V
I
DSS
--
--
1.0
mA
Gate Threshold Voltage
V
DS
= 10 V, I
D
= 75 mA
V
GS(th)
3.0
--
5.0
Volts
Forward Transconductance
V
DS
= 10 V, I
D
= 3 A
g
fs
--
2.2
--
Siemens
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
65
Vdc
Gate-Source Voltage
V
GS
20
Vdc
Operating Junction Temperature
T
J
200
C
Total Device Dissipation at
P
D
105
Watts
Above 25C derate by
0.6
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (T
CASE
= 70C)
R
q
JC
1.65
C/W
Typical Performance
10
11
12
13
14
15
1300
1400
1500
1600
1700
Frequency (MHz)
Ga
i
n
10
20
30
40
50
60
Output Power & Efficienc
y
V
DD
= 28 V
I
DQ
= 360 mA
Typical P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Output Power (W)
Efficiency (%)
Gain (dB)
Broadband Test Fixture Performance
4
6
8
10
12
14
1400
1450
1500
1550
1600
Frequency (MHz)
G
a
in (dB)
0
10
20
30
40
50
60
V
DD
= 28 V
I
DQ
= 360 mA
P
OUT
= 10 W
Gain (dB)
Return Loss (dB)
Efficiency (%)
Efficiency (%
)
Return Loss (dB
)
- 5
-15
-25
-35
PTF 10021
3
e
Output Power vs. Supply Voltage
25
30
35
40
22
24
26
28
30
32
34
Supply Voltage (Volts)
Output Power (Watts)
I
DQ
= 360 mA
f = 1.5 GHz
Power Gain vs. Output Power
9
10
11
12
13
14
15
16
0.1
1.0
10.0
100.0
Output Power (Watts)
Po
we
r Ga
i
n
(d
B)
V
DD
= 28 V
f = 1.5 GHz
I
DQ
= 360 mA
I
DQ
= 180 mA
I
DQ
= 90 mA
Intermodulation Distortion vs. Output Power
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
0
5
10
15
20
25
30
35
40
Output Power (Watts-PEP)
IM
D (dBc
)
V
DD
= 28 V
I
DQ
= 360 mA
f
1
= 1.499 GHz
f
2
= 1.500 GHz
3rd Order
7th
5th
Capacitance vs. Supply Voltage *
0
20
40
60
80
100
120
0
10
20
30
40
Supply Voltage (Volts)
Cds and Cgs (pF)
0
2
4
6
8
10
C
r
ss (pF)
C
gs
C
ds
C
rss
V
GS
=0 V
f = 1 MHz
Bias Voltage vs. Temperature
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20
30
80
130
Temp. (C)
B
i
as Voltage (V
)
0.3
0.87
1.44
2.01
2.58
3.15
Voltage normalized to 1.0 V
Series show current (A)
*This part is internally matched. Measurements of the finished
product will not yield these figures.
PTF 10021
4
e
Typical Scattering Parameters
(V
DS
= 28 V, I
D
= 900 mA)
f
S11
S21
S12
S22
(MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
100
0.938
-150.8
4.529
35.0
0.0012
84.1
0.813
-162.
200
0.949
-156.9
3.199
31.9
0.0021
92.3
0.839
-166.
300
0.988
-169.3
0.825
12.0
0.0046
95.2
0.893
-172.
400
0.993
-174.7
0.325
5.8
0.0068
92.8
0.929
-176.
500
0.993
-178.1
0.108
9.3
0.0093
90.5
0.943
-179.
600
0.991
179.0
0.047
127.9
0.0123
86.2
0.981
177.7
700
0.990
176.6
0.154
150.5
0.0150
81.9
1.000
172.2
800
0.993
174.3
0.262
149.2
0.0177
77.9
0.947
167.8
900
0.998
171.7
0.393
145.6
0.0212
74.6
0.915
165.2
1000
0.999
168.6
0.586
140.5
0.0257
69.1
0.883
162.8
1100
1.000
164.8
0.927
132.9
0.0312
61.2
0.874
159.9
1200
0.996
158.8
1.662
120.1
0.0383
51.9
0.846
152.3
1300
0.898
145.7
3.504
84.7
0.0521
27.0
0.632
135.8
1400
0.590
144.7
4.350
30.7
0.0454
-12.0
0.259
160.0
1500
0.443
171.8
4.857
-15.9
0.0316
-57.1
0.472
-156.
1600
0.655
-175.3
3.876
-68.4
0.0090
-146.3
0.817
-170.
1700
0.747
-176.7
2.729
-102.8
0.0119
113.0
0.853
179.6
1800
0.831
-178.1
1.930
-132.0
0.0190
88.8
0.855
174.9
1900
0.904
178.4
1.315
-155.7
0.0263
74.8
0.859
171.6
2000
0.944
174.2
0.897
-172.8
0.0303
60.6
0.861
168.7
2100
0.966
170.6
0.641
175.3
0.0299
49.6
0.860
166.2
2200
0.990
167.3
0.491
166.2
0.0283
50.1
0.877
163.7
Frequency
Z Source
W
Z Load
W
GHz
R
jX
R
jX
1.30
7.70
-8.77
3.08
-6.77
1.40
7.90
-9.30
3.32
-5.89
1.45
8.30
-10.52
3.45
-5.00
1.50
11.60
-10.60
3.50
-4.50
1.55
13.30
-7.30
3.80
-4.90
1.60
12.90
-5.70
3.70
-6.00
1.70
10.50
-2.07
3.30
-7.16
Z Source
Z Load
G
S
D
Impedance Data
V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 360 mA
Z
0
= 10
W
PTF 10021
5
e
Placement Diagram (not to scale)
Q1
PTF 10021
Field Effect Transistor
l1
0.11 l 1.5 GHz
Microstrip 30.21 W
l2
0.0483 l 1.5 GHz Microstrip 11.69 W
l3
0.07 l 1.5 GHz
Microstrip 70 W
l4
0.0853 l 1.5 GHz Microstrip 11.69 W
l5
0.07 l 1.5 GHz
Microstrip 21 W
l6
0.25 l 1.5 GHz
Microstrip 70 W
C1
33 pF
Chip Cap ATC 100 B
C2
1.3 pF
Chip Cap ATC 100 B
C3
0.7 pF
Chip Cap ATC 100 B
C4, C5
33 pF
Chip Cap ATC 100 B
C6
10 uF
SMT Tantalum
C7
0.1 uF
Chip Cap
C8
33 pF
Chip Cap ATC 100 B
C9
0.1 uF
Chip Cap
C10
10 uF
SMT Tantalum
L1
2.7 nH
SMT Coil
L2
4mm Ferrite Bead
R1
220 W
K 1206 SMT
R2
220 W
K 1206 SMT
R3
2 KW
SMT Pot
R4
470 W
K 1206 SMT
R5
2.2 W
K 1206 SMt
Circuit Board
.028" Dielectric Thickness,
Circuit Board
e
r
= 4.0, AlliedSignal,
G200, 2 oz. copper
Test Circuit
Schematic for f = 1.5 GHz
PTF 10021
6
e
Artwork (1 inch
)
Ericsson Microelectronics
RF Power Products
Morgan Hill, CA 95037 USA
Specifications subject to change without notice.
L3
1997 Ericsson Inc.
EUS/KR 1301-PTF 10021 Uen Rev. A 11-23-98
1-877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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