e
1
PTF 10031
50 Watts, 1.0 GHz
GOLDMOS
TM
Field Effect Transistor
0
10
20
30
40
50
60
70
0
1
2
3
4
Input Power (Watts)
Ou
t
p
u
t
P
o
wer
20
30
40
50
60
70
80
90
Efficiency
V
DD
= 28 V
I
DQ
= 350 mA
f = 960 MHz
Typical Power Out & Efficiency vs. Power In
Output Power (W)
Efficiency (%)
10031
A-1234569744
Package
20235
Package
20222
10015
A-1234561970
Description
The PTF 10031 is a 50 Watt LDMOS FET intended for large signal
amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.0
dB of gain. Nitride surface passivation and full gold metallization ensure
excellent device lifetime and reliability.
Performance at 960 MHz, 28 Volts
- Output Power = 50 Watts
- Power Gain = 13.0 dB Typ
- Efficiency = 55% Typ
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
Back Side Common Source
Available in Package 20235 as PTF 10015
100% Lot Traceability
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
65
Vdc
Gate-Source Voltage
V
GS
20
Vdc
Operating Junction Temperature
T
J
200
C
Total Device Dissipation T
CASE
= 25C
P
D
175
Watts
Above 25C derate by
1.0
W/C
Storage Temperature Range
T
STG
-65 to 150
C
Thermal Resistance (T
CASE
= 70C)
R
q
JC
1.0
C/W
All published data at T
CASE
= 25C unless otherwise indicated.
2
PTF 10031
e
Gain vs. Power Output
10
11
12
13
14
15
16
0
10
20
30
40
50
60
70
Power Output (Watts)
Gain (dB)
V
DD
= 28 V
I
DQ
= 350 mA
f = 960 MHz
Intermodulation Distortion vs. Power Output
-55
-45
-35
-25
-15
0
10
20
30
40
50
60
70
Output Power (Watts PEP)
IM
D (dB)
V
DD
= 28 V
I
DQ
= 350 mA
f
1
= 950.000 MHz
f
2
= 950.100 MHz
3rd Order
5th
7th
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 25 mA
V
(BR)DSS
65
--
--
Volts
Drain-Source Leakage Current
V
DS
= 28 V, V
GS
= 0 V
I
DSS
--
--
1.0
mA
Gate Threshold Voltage
V
DS
= 10 V, I
D
= 75 mA
V
GS(th)
3.0
--
5.0
Volts
Forward Transconductance
V
DS
= 10 V, I
D
= 3 A
g
fs
--
2.8
--
Siemens
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Common Source Power Gain
(V
DD
= 28 V, P
OUT
= 50 W, I
DQ
= 350 mA, f = 960 MHz)
G
ps
12.0
13.0
--
dB
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 350 mA, f = 960 MHz)
P-1dB
50
55
--
Watts
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 50 W, I
DQ
= 350 mA, f = 960 MHz)
h
50
55
--
%
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 50 W, I
DQ
= 350 mA, f = 960 MHz--
Y
--
--
10:1
--
all phase angles at frequency of test)
Typical Performance
3
PTF 10031
e
Frequency
Z Source
W
Z Load
W
MHz
R
jX
R
jX
850
1.38
-1.22
2.50
1.00
900
1.20
-0.44
2.45
1.65
950
1.08
+0.67
2.40
2.33
1000
0.96
+1.30
2.40
2.90
Output Power vs. Supply Voltage
40
45
50
55
60
22
24
26
28
30
32
34
Drain-Source Voltage (Volts)
Output Power (Watts)
I
DQ
= 350 mA
f = 960 MHz
Gain vs. Frequency
(circuit optimize d at 960 M Hz)
11
12
13
14
15
950
960
970
980
990
1000
Fre que ncy (M Hz)
Ga
in (dB)
V
DD
= 28 V
I
DQ
= 350 m A
P
O UT
= 50 W
Z
0
= 50
W
Z Source
Z Load
G
S
D
Impedance Data
(circuit optimized at 960 MHz)
V
DD
= 28 V, P
OUT
= 50 W, I
DQ
= 350 mA
Capacitance vs. Supply Voltage
0
20
40
60
80
100
120
140
160
0
10
20
30
40
Supply Voltage (Volts)
Cds
& Cgs
(pF)
2
4
6
8
10
12
14
16
18
C
r
ss (pF)
C
gs
C
ds
C
rss
V
GS
= 0 V
f = 1 MHz
Bias Voltage vs. Temperature
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20
5
30
55
80
105
Temp. (C)
Bias Voltage (V)
0.43
1.25
2.08
2.9
3.71
4.53
Voltage normalized to 1.0 V
Series show current (A)
4
PTF 10031
e
Typical Scattering Parameters
(V
DS
= 28 V, I
D
= 1.0 A)
f
S11
S21
S12
S22
(MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
40
0.883
-153
33.0
93
0.014
3
0.527
-143
60
0.878
-160
21.8
85
0.013
1
0.533
-148
80
0.876
-163
16.1
80
0.012
-6
0.553
-150
100
0.884
-164
12.8
76
0.012
-13
0.574
-148
150
0.904
-165
8.21
65
0.011
-18
0.638
-148
200
0.915
-165
5.67
58
0.010
-23
0.694
-149
250
0.934
-164
4.36
51
0.010
-31
0.769
-148
300
0.947
-164
3.41
45
0.010
-31
0.792
-149
350
0.962
-163
2.78
41
0.008
-28
0.837
-150
400
0.975
-163
2.30
36
0.008
-33
0.873
-151
450
0.974
-163
1.90
33
0.006
-36
0.874
-151
500
0.977
-163
1.65
30
0.006
-52
0.912
-152
550
0.979
-164
1.44
27
0.005
-46
0.916
-154
600
0.985
-164
1.28
26
0.004
-53
0.925
-154
650
0.981
-165
1.14
22
0.003
-27
0.933
-156
700
0.980
-166
1.01
21
0.004
-18
0.933
-157
750
0.975
-167
0.924
19
0.003
-13
0.936
-158
800
0.973
-168
0.809
16
0.001
14
0.946
-160
850
0.972
-170
0.749
14
0.003
-1
0.939
-160
900
0.969
-171
0.656
12
0.003
30
0.946
-162
950
0.966
-173
0.609
14
0.002
53
0.948
-164
1000
0.969
-174
0.564
8
0.003
59
0.945
-164
1050
0.969
-176
0.526
3
0.004
56
0.949
-167
1100
0.970
-177
0.450
6
0.004
69
0.955
-167
1150
0.970
-178
0.405
1
0.005
57
0.953
-168
1200
0.970
-179
0.383
4
0.005
65
0.952
-169
1250
0.971
180
0.351
-5
0.005
56
0.959
-170
1300
0.971
179
0.330
-5
0.005
61
0.957
-170
1350
0.973
179
0.308
-5
0.005
52
0.963
-171
1400
0.973
179
0.255
-3
0.006
59
0.965
-171
1450
0.972
179
0.219
5
0.006
58
0.965
-171
1500
0.965
179
0.210
-8
0.006
62
0.957
-172
5
PTF 10031
e
Z1 = 50
W
Z2 = 6.3W
lo = .230
Z3 = 11.0W
lo = .225
Z4 = 50W
Test Circuit
Test Circuit Schematic for f = 960 MHz
DUT
PTF 10031
C1, C10
36 pF, Capacitor ATC 100 B
C2, C9
0.3-3.5 pF, Variable Capacitor, Johanson
C3
5.6 pF, Capacitor ATC 100 B
C4
0.01
m
F, Capacitor ATC 10,000 B
C5, C6
51 pF, Capacitor ATC 100 B
C7
0.1
m
F, 50 V, Capacitor Digi-Key P4917-ND
C8
100
m
F, 50 V, Electrolytic Capacitor, Digi-Key P5276
L1
4 Turn, #20 AWG, .120" I.D.
R1, R2
560
W
, 1/4 W Resistor
R3
330
W
, 1/4 W Resistor
Circuit Board
.028" Dielectric Thickness,
e
r
= 4.0, AlliedSignal, G200, 2 oz.
copper
Placement Diagram
6
PTF 10031
e
Test Circuit
Artwork (1 inch
)
Ericsson Microelectronics
RF Power Products
Morgan Hill, CA 95037 USA
Specifications subject to change without notice.
LF
1997 Ericsson Inc.
EUS/KR 1301-PTF 10031 Uen Rev. B 12-14-98
1-877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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