www.docs.chipfind.ru
e
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RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Common Source Power Gain
(V
DD
= 28 V, P
OUT
= 1 W, I
DQ
= 70 mA, f = 960 MHz)
G
ps
18
19
--
dB
Power Output at 1 dB Compressed
(V
DD
= 28 V, I
DQ
= 70 mA, f = 960 MHz)
P-1dB
6.0
7.5
--
Watts
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 6 W, I
DQ
= 70 mA, f = 960 MHz)
h
50
57
--
%
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 6 W, I
DQ
= 70 mA, f = 960 MHz--
Y
--
--
10:1
--
all phase angles at frequency of test)
All published data at T
CASE
= 25C unless otherwise indicated.
0
2
4
6
8
10
0.00
0.05
0.10
0.15
Input Power (Watts)
O
u
tput Pow
e
r (Watts)
0
14
28
42
56
70
Ef
f
i
ciency (
%
)
X
V
DD
= 28 V
I
DQ
= 70 mA
f = 960 MHz
Typical Output Power & Efficiency vs. Input Power
Efficiency
Output Pow er
PTF 10136
6 Watts, 1.0 GHz
GOLDMOS Field Effect Transistor
Package 20244
Performance at 960 MHz, 28 Volts
- Output Power = 6 Watts
- Efficiency = 57% Typ
- Power Gain = 19 dB Typ
Full Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
100% Lot Traceability
Description
The PTF 10136 is a 6watt GOLDMOS FET intended for large signal
amplifier applications from to 1.0 GHz. It operates at 57% efficiency
with 19 dB typical gain. Nitride surface passivation and full gold
metallization ensure excellent device lifetime and reliability.
10136
A-1234569935
PTF 10136
e
2
4
6
8
10
12
14
16
18
20
22
840 860 880 900 920 940 960 980 100
0
Frequency (MHz)
Ga
in
0
15
30
45
60
75
O
u
tp
u
t
Po
w
e
r & Effi
ci
en
cy
V
DD
= 28 V
I
DQ
= 70 mA
Typical P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Output Pow er (W)
Efficiency (%)
Gain (dB)
Broadband Test Fixture Performance
8
12
16
20
24
960
970
980
990
1000
Frequency (MHz)
Gai
n
20
30
40
50
60
V
DD
= 28 V
I
DQ
= 70 mA
P
OUT
= 6 W
Gain (dB)
Return Loss (dB)
Efficiency (%)
E
ffi
ci
ency
R
e
turn Loss
-8
-15
-23
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 25 mA
V
(BR)DSS
65
--
--
Volts
Drain-Source Leakage Current
V
DS
= 28 V, V
GS
= 0 V
I
DSS
--
--
1
mA
Gate Threshold Voltage
V
DS
= 10 V, I
D
= 75 mA
V
GS(th)
3.0
--
5.0
Volts
Forward Transconductance
V
DS
= 10 V, I
D
= 0.5 A
g
fs
--
0.3
--
Siemens
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
65
Vdc
Gate-Source Voltage
V
GS
20
Vdc
Operating Junction Temperature
T
J
200
C
Total Device Dissipation
P
D
39
Watts
Above 25C derate by
0.22
W/C
Storage Temperature Range
T
STG
40 to +150
C
Thermal Resistance (T
CASE
= 70C)
R
q
JC
4.5
C/W
Typical Performance
PTF 10136
e
3
-60
-50
-40
-30
-20
-10
0
0
2
4
6
8
10
Output Power (Watts-PEP)
IM
D (d
Bc)
V
DD
= 28 V, I
DQ
= 70 mA
f
1
= 960.0 MHz, f
2
= 960.1 MHz
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
3rd Order
7th
5th
Capacitance vs. Supply Voltage
0
4
8
12
16
20
0
10
20
30
40
Supply Voltage (Volts)
Cds and Cgs (
pF)
0.5
1.0
1.5
2.0
2.5
3.0
Crss (pF)
C
gs
C
ds
C
rss
V
GS
= 0 V
f = 1 MHz
Power Gain vs. Output Power
14
15
16
17
18
19
20
21
0.1
1.0
10.0
Output Power (Watts)
P
o
wer
Gain (dB)
V
DD
= 28 V
f = 960 MHz
I
DQ
= 70 mA
I
DQ
= 35 mA
I
DQ
= 20 mA
Output Power vs. Supply Voltage
0
2
4
6
8
10
24
26
28
30
32
Supply Voltage (Volts)
Output P
o
wer
(W
atts)
I
DQ
= 70 mA
f = 960 MHz
Bias Voltage vs. Temperature
0.95
0.96
0.97
0.98
0.99
1
1.01
1.02
1.03
-20
30
80
130
Temp. (C)
B
i
as Voltage (V)
0.05
0.145
0.24
0.335
0.43
0.525
Voltage normalized to 1.0 V
Series show current (A)
PTF 10136
e
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Frequency
Z Source
W
Z Load
W
MHz
R
jX
R
jX
840
1.6
7.2
8.9
15.0
860
1.4
7.1
9.2
13.1
880
1.4
7.1
9.7
12.6
900
1.3
6.9
9.6
12.5
920
1.2
6.8
10.4
11.9
940
1.2
5.7
10.6
11.7
960
1.3
5.5
14.3
11.1
980
1.4
5.1
14.4
11.2
1000
1.7
4.9
16.3
11.1
Z Source
Z Load
G
S
D
Impedance Data
V
DD
= 28 V, I
DQ
= 70 mA, P-1dB = 6 W
Z
0
= 50
W
PTF 10136
e
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Typical Scattering Parameters
(V
DS
= 28 V, I
D
= 200 mA)
f
S11
S21
S12
S22
(MHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
100
0.962
-65.3
22.2
138
0.016
48.1
0.888
-31.8
150
0.925
-78.2
20.0
129
0.018
39.0
0.853
-37.7
200
0.918
-95.7
17.4
116
0.021
28.5
0.810
-46.7
250
0.913
-109
15.0
106
0.022
19.7
0.776
-54.3
300
0.906
-120
13.0
96.8
0.023
12.4
0.754
-61.2
350
0.900
-128
11.4
89.2
0.023
6.10
0.742
-67.1
400
0.896
-134
9.98
82.5
0.022
0.77
0.737
-72.9
450
0.894
-140
8.84
76.4
0.022
-3.81
0.735
-78.3
500
0.895
-144
7.90
70.9
0.021
-7.93
0.739
-83.4
550
0.896
-148
7.09
65.9
0.020
-11.6
0.743
-88.4
600
0.897
-152
6.41
61.1
0.019
-15.0
0.752
-93.2
650
0.901
-155
5.85
56.9
0.018
-17.5
0.763
-97.5
700
0.900
-158
5.33
52.7
0.017
-19.8
0.771
-102
750
0.905
-160
4.89
48.7
0.015
-21.4
0.782
-106
800
0.908
-162
4.49
45.0
0.014
-22.9
0.787
-110
850
0.910
-165
4.14
41.2
0.013
-24.2
0.797
-113
900
0.917
-167
3.85
37.8
0.012
-24.3
0.808
-117
950
0.916
-169
3.56
34.6
0.011
-24.3
0.817
-120
1000
0.919
-171
3.31
31.2
0.009
-22.7
0.828
-123
1050
0.923
-172
3.09
28.4
0.008
-20.5
0.833
-126
1100
0.925
-174
2.88
25.2
0.007
-16.5
0.841
-129
1150
0.932
-176
2.70
22.4
0.006
-10.7
0.849
-132
1200
0.929
-177
2.53
19.7
0.006
-1.76
0.855
-135
1250
0.930
-179
2.38
16.8
0.005
9.41
0.864
-138
1300
0.934
180
2.24
14.5
0.005
22.3
0.871
-140
1350
0.935
178
2.10
11.9
0.005
33.2
0.875
-142
1400
0.943
177
2.00
9.38
0.005
43.6
0.883
-145
1450
0.942
176
1.89
7.16
0.006
52.3
0.883
-147
1500
0.942
174
1.80
4.51
0.007
59.0
0.891
-149
1550
0.946
173
1.71
2.46
0.008
64.1
0.897
-151
1600
0.943
171
1.62
-0.02
0.009
67.2
0.902
-153
1650
0.951
170
1.55
-2.40
0.010
69.7
0.911
-155
1700
0.951
169
1.48
-4.21
0.011
71.9
0.911
-157
1750
0.951
167
1.41
-6.51
0.012
72.2
0.911
-159
1800
0.952
166
1.35
-8.48
0.013
72.5
0.912
-161
1850
0.947
165
1.28
-10.8
0.014
72.0
0.911
-163
1900
0.951
163
1.24
-13.0
0.015
71.8
0.920
-165
1950
0.951
162
1.18
-14.7
0.017
71.9
0.920
-166
2000
0.949
161
1.13
-16.8
0.018
71.3
0.923
-168
2050
0.953
160
1.09
-18.7
0.019
71.1
0.925
-170
2100
0.947
159
1.05
-20.8
0.020
70.4
0.922
-171
2150
0.950
157
1.01
-22.9
0.021
69.4
0.929
-173
2200
0.946
156
0.982
-24.2
0.022
68.6
0.930
-175
PTF 10136
e
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Placement Diagram (not to scale)
Test Circuit
C1, C2, C3, C6
36 pF, Capacitor ATC 100 B
C4
0.1F, 50 V, Capacitor Digi-Key P4525-ND
C5
100
m
F, 50 V, Capacitor, Digi-Key P5782-ND
C7
0.7
m
F ATC 100 B
C8
5.1F ATC 100 B
J1, J2
Connector, SMA, Female, Panel Mount N/A
L1
4 Turns, 22 AWG, .085 Dia I.D. Magnet Wire N/A
R1, R2, R3
Resistor, 220ohm, 1/4W Digi-Key 2.2QBK
Circuit Board
.031" thick,
e
r
= 4.0, G200, AlliedSignal, 2 oz. copper
C6
Test Circit Schematic fo f=960 MHz
DUT PTF 10136 LDMOS Transistor
l
1 0.221
l
960 MHz Microstrip 8.9
W
l
2,
l
3 0.020
l
960 MHz Microstrip 41.0
W
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