OUTLINE DRAWING
Maximum Ratings
Approx Net Weight:0.17g
Rating
Symbol
11ES1 Unit
Repetitive Peak Reverse Voltage
V
RRM
100 V
Non-repetitive Peak Reverse Voltage
V
RSM
250 V
0.98
Ta=25
C *1
Average Rectified Output Current
I
O
1.0
Ta=50
C *2
50Hz Half Sine
Wave Resistive Load
A
RMS Forward Current
I
F(RMS)
1.57 A
Surge Forward Current
I
FSM
45
50Hz Half Sine Wave,1cycle,
Non-repetitive
A
Operating JunctionTemperature Range
T
jw
- 40 to + 150
C
Storage Temperature Range
T
stg
- 40 to + 150
C
Electrical
Thermal Characteristics
Characteristics
Symbol Conditions Min.
Typ.
Max.
Unit
Peak Reverse Current
I
RM
Tj= 25
C, V
RM
= V
RRM
- - 50
A
Peak Forward Voltage
V
FM
Tj= 25
C, I
FM
= 1.0A
- - 1.0
V
*1 -
-
140
Thermal Resistance
Rth(j-a) Junction to Ambient
*2
110
C/W
*1:Without Fin or P.C. Board
*2:P.C. Board Mounted (L=3mm,Print Land=5x5mm,Both Sides)
DIODE
Type :
:
:
:
11ES1
11ES1
11ES1
11ES1
FEATURES
* Miniature Size
* Low Forward Voltage drop
* Low Reverse Leakage Current
* High Surge Capability
* 26mm and 52mm Inside Tape Spacing Package
Available
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