Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
28
40
54
75
R
JL
21
30
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
C/W
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
12
Pulsed Drain Current
B
Power Dissipation
T
A
=25C
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Ambient
A
Steady-State
13.7
9.7
60
Continuous Drain
Current
A
Maximum
Units
Parameter
T
A
=25C
T
A
=70C
30
W
Junction and Storage Temperature Range
A
P
D
C
3.1
2
-55 to 150
T
A
=70C
I
D
AO4420, AO4420L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
Rev 4: Nov 2004
Features
V
DS
(V) = 30V
I
D
= 13.7A
R
DS(ON)
< 10.5m
(V
GS
= 10V)
R
DS(ON)
< 12m
(V
GS
= 4.5V)
General Description
The AO4420 uses advanced trench technology to
provide excellent R
DS(ON)
,
shoot-through immunity and
body diode characteristics. This device is suitable for
use as a synchronous switch in PWM applications.
AO4420L is offered in a lead-free package. AO4420L
( Green Product ) is offered in a lead-free package.
SOIC-8
G
S
S
S
D
D
D
D
G
D
S
Alpha & Omega Semiconductor, Ltd.
AO4420, AO4420L
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
0.004
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
0.6
1.1
2
V
I
D(ON)
40
A
8.3
10.5
T
J
=125C
12.5
15
9.7
12
m
g
FS
30
37
S
V
SD
0.76
1
V
I
S
5
A
DYNAMIC PARAMETERS
C
iss
3656
4050
pF
C
oss
256
pF
C
rss
168
pF
R
g
0.86
1.1
SWITCHING PARAMETERS
Q
g
(4.5V)
30.5
36
nC
Q
gs
4.6
nC
Q
gd
8.6
nC
t
D(on)
5.5
9
ns
t
r
3.4
7
ns
t
D(off)
49.8
75
ns
t
f
5.9
11
ns
t
rr
22.5
28
ns
Q
rr
12.5
16
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Gate Drain Charge
Body Diode Reverse Recovery Charge I
F
=13.7A, dI/dt=100A/
s
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=15V, R
L
=1.1
,
R
GEN
=0
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Total Gate Charge
Input Capacitance
I
F
=13.7A, dI/dt=100A/
s
On state drain current
Forward Transconductance
Diode Forward Voltage
I
S
=1A,V
GS
=0V
V
GS
=4.5V, V
DS
=5V
Turn-On DelayTime
V
GS
=10V, V
DS
=15V, I
D
=13.7A
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
Gate Threshold Voltage
Drain-Source Breakdown Voltage
I
D
=250
A, V
GS
=0V
Zero Gate Voltage Drain Current
Gate-Body leakage current
V
DS
=V
GS
I
D
=250
A
V
DS
=24V, V
GS
=0V
V
DS
=0V, V
GS
= 12V
R
DS(ON)
Static Drain-Source On-Resistance
m
V
GS
=4.5V, I
D
=12.7A
V
GS
=10V, ID=13.7A
Gate Source Charge
Gate resistance
Reverse Transfer Capacitance
V
DS
=5V, I
D
=13.7A
Output Capacitance
Maximum Body-Diode Continuous Current
V
GS
=0V, V
DS
=15V, f=1MHz
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value
in any a given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO4420, AO4420L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
60
0
1
2
3
4
5
V
DS
(Volts)
Figure 1: On-Regions Characteristi
cs
I
D
(A
)
V
GS
=2.0V
V
GS
=2.5V
0
5
10
15
20
25
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
25C
125C
V
GS
=5V
6
7
8
9
10
11
12
0
5
10
15
20
25
30
I
D(
A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS(
O
N)
(m
)
V
GS
=10V
V
GS
=4.5V
0.8
1.0
1.2
1.4
1.6
1.8
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
N
o
r
m
aliz
e O
N
-
R
esist
an
ce
V
GS
=4.5V
I
D
=13.7A
V
GS
=10V
0
5
10
15
20
25
30
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS(
O
N)
(m
)
25C
125C
I
D
=13.7A
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A
)
25C
125C
Alpha & Omega Semiconductor, Ltd.
AO4420, AO4420L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0
10
20
30
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
ol
t
s)
V
DS
=15V
I
D
=13.7A
100
1000
10000
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
acit
a
n
ce (
p
F
)
C
iss
C
rss
C
oss
0.1
1
10
100
0.1
1
10
100
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area (Note E)
I
D
(A
)
T
J(Max)
=150C
T
A
=25C
R
DS(ON)
limited
10
s
10ms
1ms
0.1s
1s
10s
DC
100
s
0
10
20
30
40
50
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (S)
Figure 11: Normalized Maximum Transient Thermal Impedence
Z
JA
N
o
r
m
aliz
ed
T
r
an
sien
t
T
h
e
r
m
al R
esist
an
ce
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=40C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
T
on
T
P
D
Alpha & Omega Semiconductor, Ltd.
SO-8 PACKAGE MARKING DESCRIPTION
ALPHA & OMEGA
SEMICONDUCTOR, LTD.
AO4420 Marking Description
Version
Document No.
Title
rev C
PD-00139
NOTE:
LOGO - AOS LOGO
4420 - PART NUMBER CODE.
F&A - FOUNDRY AND ASSEMBLY LOCATION
Y - YEAR CODE
W - WEEK CODE.
L T - ASSEMBLY LOT CODE
CODE
AO4420
4420
PART NO. DESCRIPTION
AO4420L
Standard product
Green product
4420
Standard product
Green product
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