1
Edition 1.3
July 2004
FLD3F10NP-A
FEATURES
Modulator Integrated DFB Laser Diode Module
CW operation of DFB laser section
Modulation voltage applied only to modulator section
High speed butterfly package with GPO connection
Built-in optical isolator, monitor photodiode, thermistor, and
thermo-electric cooler
APPLICATION
This MI laser is intended for intermediate reach applications
(
24km) at 10Gb/s.
DESCRIPTION
The Modulator Integrated DFB Laser (MI DFB Laser) has an electro-absorption modulator
monolithically integrated with a conventional Distributed Feed-Back (DFB) laser. The modulation
voltage is applied to the modulator section while the laser section operates CW allowing extremely
low wavelength chirping. Extinction ratios of more than 8.2 dB can be achieved with 2.6 Vp-p
modulation. The MI laser is installed in a butterfly type package. The module incorporates a highly
stable optical coupling system. The module includes an optical isolator, monitor photodiode,
thermistor and a thermoelectric cooler.
Parameter
Symbol
Storage Temperature
Tstg
+85
-
C
-40
Operating Case Temperature
+70
-
C
Top
0
Optical Output Power
5
CW
mW
Pf
-
Laser Forward Current
150
CW
mA
IF
-
Laser Reverse Voltage
2
CW
V
VR
-
Modulator Forward Voltage
+1
CW
V
Vm
-5
Photodiode Forward Current
1
-
mA
-
-
10
-
V
Photodiode Reverse Voltage
VDR
-
10
260
C
sec
Lead Soldering Time
-
-
TEC Voltage
+2.5
Cooling
-
Heating
V
Vc
-
-2.0
TEC Current
+1.4
Cooling
-
Heating
A
Ic
-
-0.7
Thermistor Temperature
+70
0
ATC Operation
C
Tth
Rating
Unit
Min.
Max.
ABSOLUTE MAXIMUM RATINGS (Top=25C, unless otherwise specified)
Condition
1,310nm Modulator
Integrated DFB Laser
2
FLD3F10NP-A
Parameter
Symbol
OPTICAL & ELECTRICAL CHARACTERISTICS (TL= Tset, Tc = 25C, BOL, unless otherwise specified)
Note (1) Eudyna Test System
9.95328Gb/s, PRBS=2
23
-1, IF=Iop, Vm=Vo and (Vo-Vmod)
Dispersion=82ps/nm, Dispersion penalty at
Bit Error Rate = 1.0E-10
Note (2) Eudyna Test System
9.95328Gb/s, PRBS=2
23
-1, IF=Iop, Vm=Vo and (Vo-Vmod)
Unit
Limits
Max.
Type
Min.
Test Condition
Dispersion Penalty
dP
dB
1.0
-
-
Note (1)
Sidemode Suppression Ratio
SSR
dB
-
30
-
Note (2)
Peak Wavelength
p
nm
1320
-
1290
Note (2)
Fall Time
Tf
ps
25
-
-
Note (2), 20 to 80%
Rise Time
Tr
ps
25
-
-
Note (2), 20 to 80%
RF Return Loss
S11
dB
8
-
-
f=DC-5GHz, 50
Test Set,
Vm=-1V, IF=Iop
RF Return Loss
S11
dB
5
-
-
f=5-10GHz, 50
Test Set,
Vm=-1V, IF=Iop
Cut-off Frequency
S21
GHz
10
-
-
-3dB bandwidth,
Vm=-1V, IF=Iop
Optical Output Power
(Avg. Power)
Pf
dBm
2.0
0.0
-
Note (1)
Forward Voltage
VF
V
-
2.2
-
CW, IF=Iop, Vm=Vo
TEC Power Dissipation
P
c
W
2.9
-
-
I
F
=Iop
TL=25
C
Threshold Current
Ith
mA
-
35
-
CW, Vm=Vo
Threshold Power
Pth
W
-
75
-
CW, IF=Ith, Vm=Vo
On Level Modulation
Vo
V
-1.0
0
-
-
Modulator Drive Voltage
Vmod
Vpp
-
2.6
-
(Vo-Vmod)
-3.3V
Monitor Current
Im
mA
-
2.0
0.2
V
DR
=5V, Note (2)
Operating Current
Iop
mA
50
100
-
CW, Vm=Vo
Extinction Ratio
Rext
dB
-
-
8.2
f=10Gb/s, IF=Iop,
Vm=Vo/(Vo-Vmod)
Optical Isolation
Is
dB
-
23
35
Tc=0 to +70
C
TEC Capacity
T
C
-
45
-
PTEC=2.4W, IF=Iop
TEC Current
Ic
A
1.2
-
-
IF=Iop, T=45C
TEC Voltage
Vc
V
2.4
-
-
IF=Iop, T=45C
Thermal Resistance
Rth
k
10.5
9.5
-
Thermistor B Constant
B
K
3,630
3,270
3,450
1,310nm Modulator
Integrated DFB Laser
3
FLD3F10NP-A
Fig. 3 Extinction Ratio
vs. Modulation Voltage
Fig. 4 Cut-off Frequency (S21)
Frequency (GHz)
Modulation Voltage (V)
Minus Extinction Ratio (dB)
Relative Output (dB)
-10
-5
0
-15
-20
-25
0.5
1.0
1.5
2.0
2.5
0
5
10
15
20
0
-12
-9
-6
-3
0
3
6
9
12
Fig. 5 RF Return Loss (S11)
Frequency (GHz)
Return Loss (dB)
5
10
15
20
0
-40
-30
-20
-10
0
10
20
30
40
10 Gb/s
PRBS=2
23
-1
IF=Iop
Vm=Vo/(Vo-2)
Vo=-0.3V
TLD=+25C
Pf
Im
Fig. 1 Lasing Spectrum
Wavelength (Span=1 nm/div, Res.=0.1nm)
Fig. 2 Output Pwer & Monitor Current
vs. Forward Current
Forward Current, IF (mA)
Output Power, Pf (mW)
Monitor Current (mA)
3
4
2
1
20
40
60
80
100
0
0
1.5
2.0
1.0
0.5
0
Relative Intensity (10 dB/div.)
1,310nm Modulator
Integrated DFB Laser
4
FLD3F10NP-A
*L
25.0
0.5
29.97
0.25
5.08
0.25
17.24
0.25
15.24
0.25
2.54
0.20
7-0.5
PIN 1
4-2.67
0.2
PIN 7
8.17
0.25
5.41
0.25
7-0.15
0.05
26.04
0.25
20.83
0.25
4.16
10.0
0.25
1.25
12.7
0.25
8.25
0.20
0.9
0.1
5.2
0.25
8.89
0.15
# PIN DESIGNATIONS
1 Thermistor
2 Thermistor
3 LD
Anode
4
Power Monitor Anode
5
Power Monitor Cathode
6 Thermoelectirc
Cooler
(+)
7 Thermoelectric
Cooler
(-)
8 Modulator
Anode
(-)
22.00
0.25
PIN 8
* Pigtail length (L) and connector type are
specified in the detail (individual) specification.
Case Ground: LD Cathode
4.83
0.20
0.5
0.2
5.47
0.2
CONNECTOR
TEC
TH
10K
50
7
6
8
5
4
3
2
1
TOP VIEW
"NP" PACKAGE
UNIT: mm
1,310nm Modulator
Integrated DFB Laser
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not put this product into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
For further information please contact:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
2004 Eudyna Devices USA Inc.
Printed in U.S.A.
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