FEATURES
High Voltage Operation (VDS=28V) GaAs FET
High Gain: 15.5dB(typ.) at Pout=40dBm(Avg.)
Broad Frequency Range : 2110 to 2170MHz
High Reliability
DESCRIPTION
The FLL21E045IY is a high power GaAs FET that offers high efficiency,
ease of matching, greater consistency and broad bandwidth for high
power L-band amplifiers. This device is targeted for high voltage, low
current operation in digitally modulated base station amplifiers. This
product is ideally suited for W-CDMA and Multi-carrier PCS base station
amplifiers while offering high gain, long term reliability and ease of use.
Edition 1.1
June 2004
1
FLL21E045IY
L,S-band High Power GaAs FET
ABSOLUTE MAXIMUM RATING
Item
Symbol
Condition
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
V
Total Power Dissipation
P
T
W
Storage Temperature
T
stg
-
o
C
Channel Temperature
T
ch
-
o
C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25
o
C)
Item
Symbol
Condition
Unit
DC Input Voltage
V
DS
V
Forward Gate Current
I
GF
R
G
=2
mA
Reverse Gate Current
I
GR
R
G
=2
mA
Channel Temperature
T
ch
o
C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Min.
Typ. Max.
Pinch-Off Voltage
V
P
V
DS
=5V, I
DS
=75.4mA
-0.1
-0.2
-0.5
V
Gate-Source Breakdown Voltage
V
GSO
I
GS
=-754uA
-5
-
-
V
3rd Order Intermodulation Distortion
IM
3
-
-33
-30
dBc
Power Gain
G
P
14.5
15.5
-
dB
Drain Efficiency
D
-
26
-
%
Adjacent Channel Leakage Power Ratio
ACLR
-
-35
-
dBc
Themal Resistance
R
th
Channel to Case
-
1.7
1.9
o
C/W
Note 1 : IM
3
, ACLR and Gain test conditions as follows
IM
3
& Gain : f
0
=2.1325GHz, f
1
=2.1475GHz W-CDMA(3GPP3.4 12-0) BS-1 64ch non clipping modulation measured over 3.84MHz at f
0
-15MHz and f
1
+15MHz.
ACLR : f
0
=2.1325GHz W-CDMA (3GPP3.4 12-00) BS-1 64ch non clipping modulation, measured over 3.84MHz at f
0
+/-5MHz
ESD
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k)
CASE STYLE : IY
V
DS
=28V
I
DS
(DC)=500mA
P
out
=40dBm(Avg.)
Note 1
Unit
Item
Symbol
Condition
Limit
200
<28
<176
>-15.9
CLASS III
2000V ~
T
C
=25
o
C
(Case Temperature)
Rating
32
-3
92
Limit
155
65 to +175
2
Output Power & Drain Efficiency vs. Input Power
V
DS
=28V, I
DS
=500mA, f=2.14GHz
Output Power vs. Frequency
V
DS
=28V, I
DS
=500mA
FLL21E045IY
L,S-band High Power GaAs FET
30
32
34
36
38
40
42
44
46
48
50
18 20
22 24
26 28
30 32
34 36
Input Power [dBm]
Output Power [dBm]
0
10
20
30
40
50
60
70
80
90
100
Drain Efficiency [%]
Pout
d
Two-Carrier IMD(ACLR) vs. Output Power
V
DS
=28V, I
DS
=500mA, f
0
=2.135, f
1
=2.145GHz
W-CDMA 3-GPP BS-1 64ch Modulation
Single-Carrier ACLR vs. Output Power
V
DS
=28V, I
DS
=500mA, f
0
=2.135GHz
W-CDMA 3GPP BS-1 64ch Modulation
36
38
40
42
44
46
48
50
2.10
2.12
2.14
2.16
2.18
2.20
Frequncy [GHz]
Ou
t
p
u
t
P
o
we
r
[
d
B
m
]
Pin=22dBm
Pin=24dBm
Pin=26dBm
Pin=28dBm
Pin=30dBm
Pin=32dBm
-60
-55
-50
-45
-40
-35
-30
-25
24 26 28 30 32 34 36 38 40 42 44
Output Power[dBm]
IM
D
[
d
B
c
]
5
10
15
20
25
30
35
40
D
r
ai
n
E
ffi
ci
e
n
cy
[%
]
IM3
IM5
Drain Efficiency
-60
-55
-50
-45
-40
-35
-30
-25
24 26 28 30 32 34 36 38 40 42 44
Output Power[dBm]
AC
L
R
[d
Bc]
5
10
15
20
25
30
35
40
D
r
ai
n
E
f
f
i
ci
en
c
y
[
%
]
+/-5MHz
+/-10MHz
Drain Efficiency
FLL21E045IY
L,S-band High Power GaAs FET
3
Board Layout
Circuit Diagram of the Board
V
GS
V
DS
C1
C2
C3
C4
L1
C8
C9x5
R1
C11
C10
C12
C13
C14
R2
C15
C16
C17
C18
r=3.5 t=0.8mm
Z1, Z11 9.00mm x 1.78mm Transmission Line
Z2 25.5mm x 1.78mm Transmission Line
Z3 7.30mm x 1.78mm Transmission Line
Z4 6.00mm x 13.0mm Transmission Line
Z5 23.0mm x 0.50mm Transmission Line
Z6 3.00mm x 25.0mm Transmission Line
Z7 3.00mm x 13.0mm Transmission Line
Z8 23.0mm x 1.50mm Transmission Line
Z9 7.30mm x 1.78mm Transmission Line
Z10 25.5mm x 1.78mm Transmission Line
C1,C2 10pF
C3 1.5pF
C4 2.0pF
C8 1.5pF
C9 0.1uF
C10,C15 20pF
C11,C16 100nF
C12,C17 1000pF
C13,C14 10uF
C18 22uF
L1 3.3nF
R1 2.0ohm
R2 51ohm
Board
input size
r=3.5 t=0.8mm
50mm x 50mm
output size
r=3.5 t=0.8mm
50mm x 50mm
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
C1
C3
C8
L11
C9x5
C4
C2
C14 C13 C12 C11 C10
C15 C16 C18
C17
R2
R1
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