DESCRIPTION
The FLL310IQ-3A is a 30 Watt GaAs FET that employ a push-pull
design which offers excellent linearity, ease of matching, and greater
consistency in covering the frequency band of 2.5 to 2.7GHz.
This new product is ideally suited for use in MMDS design requirements
as it offers high gain, long term reliability and ease of use.
EUD stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25
o
C)
Item
Symbol
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
V
Total Power Dissipation
PTot
W
Storage Temperature
T
stg
o
C
Channel Temperature
T
ch
o
C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25
o
C)
Item
Symbol
Condition
Unit
DC Input Voltage
VDS
V
Forward Gate Current
IGF
RG=25
mA
Reverse Gate Current
IGR
RG=25
mA
Operating channel temperature
Tch
o
C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Min.
Typ. Max.
Saturated Drain Current
IDSS
VDS=5V,VGS=0V
-
1200
1600
mA
Transconductance
gm
VDS=5V,IDS=7.2A
-
6000
-
mS
Pinch-off Voltage
Vp
VDS=5V,IDS=720mA
-1.0
-2.0
-3.5
V
Gate-Source Breakdown Voltage
VGSO
IGS=-720uA
-5.0
-
-
V
Output Power at 1dB G.C.P.
P1dB
44.0
45.0
-
dBm
Power Gain at 1dB G.C.P.
G1dB
8.0
9.0
-
dB
Drain Current
IDSR
-
7.0
8
A
Power-added Efficiency
add
Note1
-
40.0
-
%
3rd Order Intermoduation
f=2.7GHz,
f=5MHz
Distortion
IM3
2-Tone test
-
-40.0
-
dBc
Pout=37.0dBm S.C.L.
Thermal Resistance
Rth
Channel to Case
-
1.0
1.4
oC/W
Channel Temperature Rise
Tch
Note2
-
-
100.0
o
C
Note1: Tested in EUD Test Fixture containing external matching.
Note2:
Tch=10V x IDSR x Rth
Unit
Rating
15
-5
107
-65 to +175
175
<54.4
145
VDS=10V
f=2.7GHz
IDS(DC)=7.0A
Limit
Item
Symbol
Condition
Limit
>-17.4
10
High Voltage - High Power GaAs FET
FEATURES
Push-Pull Configuration
High Power Output:30W
Excellent Linearity
Suitable for class A and class AB operation.
High PAE:40%
CASE STYLE: IQ
Edition 1.1
May 2005
1
FLL310IQ-3A
ESD
Class
III
2000 V~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k
)
5
High Voltage - High Power GaAs FET
For further information please contact :
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment.
For safety, observe the following procedures:
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-
products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding
this product. This product must be discarded in accordance with
methods specified by applicable hazardous waste procedures.
Eudyna Devices Asia Pte. Ltd. Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road, Tsim Sha Tsui Kowloon, Hong kong
Tel: +852-2377-0227
Fax: +852-2377-3921
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho, Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
Tel +81-55-275-4411
Fax +81-55-275-9461
Sales Division
1,Kanai-cho,Sakae-ku,Yokohama,244-0845,Japan
Tel +81-45-853-8156
Fax +81-45-853-8170
FLL310IQ-3A
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